摘要:
A method of fabricating a semiconductor device includes forming an active pattern protruding from a substrate, forming a liner layer on the active pattern, forming a sacrificial gate pattern on the liner layer and crossing the active pattern, forming source/drain regions on the active pattern and at both sides of the sacrificial gate pattern, forming an interlayer insulating layer to cover the source/drain regions, forming capping insulating patterns on the interlayer insulating layer to expose the sacrificial gate pattern, and removing the sacrificial gate pattern and the liner layer by an etching process using the capping insulating patterns as an etch mask to form a gap region exposing the active pattern. The active pattern includes a material having a lattice constant greater than a lattice constant of the substrate, and the capping insulating patterns include a material having an etch selectivity with respect to the liner layer.
摘要:
A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer.
摘要:
A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer.
摘要:
A power generation structure according to an embodiment of the present invention comprises: terrain features spaced apart from each other at a first interval to thereby form a watercourse through which water can move in the front and rear directions; watercourse banks having a width narrower than the first interval and disposed on the watercourse to thereby respectively form equal-width watercourses having a constant width between the terrain features; a first water collecting bank disposed on the watercourse and formed in the shape of a tip extending from the front end of the watercourse bank on the basis of the moving direction of a tidal current, with the width being gradually decreased toward the front of the equal-width watercourse; and a second water collecting bank disposed on the watercourse and formed in the shape of a tip extending from the rear end of the watercourse bank on the basis of the moving direction of the tidal current, with the width being gradually decreased toward the rear of the equal-width watercourse.