公开(公告)号：US6059986A

公开(公告)日：2000-05-09

申请号：US144254

申请日：1998-08-31

申请人： Jae-hyung Jung ,  Young-hwan Yun ,  Se-jong Ko ,  Min-sang Yun

发明人： Jae-hyung Jung ,  Young-hwan Yun ,  Se-jong Ko ,  Min-sang Yun

IPC分类号： H01L21/306 ,  H01L21/00 ,  H01L21/304 ,  C23F1/02 ,  G05D23/00 ,  H05B1/00

CPC分类号： H01L21/67086 ,  H01L21/67057

摘要： A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

摘要翻译： 用于清洗和湿蚀半导体晶片的湿站装置包括用于保存化学溶液的化学容器，用于测量化学溶液的温度的温度测量装置，用于比较由温度测量装置测量的温度的温度控制单元 具有预定的参考温度值，并输出作为控制信号的结果，用于加热化学溶液的石英加热器，用于接收控制信号并调节供应到石英加热器的功率的电源控制器，以及连接到 电源控制器，用于接收加热启动信号和切换到石英加热器的电力，其中进一步提供加热器监控系统，用于监视石英加热器和电源控制器的运行状态，并通知操作者任何问题。

公开(公告)号：US5944939A

公开(公告)日：1999-08-31

申请号：US735454

申请日：1996-10-23

申请人： Jae-hyung Jung ,  Young-hwan Yun ,  Se-jong Ko ,  Min-sang Yun

发明人： Jae-hyung Jung ,  Young-hwan Yun ,  Se-jong Ko ,  Min-sang Yun

IPC分类号： H01L21/306 ,  H01L21/00 ,  H01L21/304 ,  C23F1/02

CPC分类号： H01L21/67086 ,  H01L21/67057

摘要： A wet station apparatus used for cleaning and wet etching a semiconductor wafer includes a chemical container for holding a chemical solution, a temperature measuring device for measuring a temperature of the chemical solution, a temperature control unit for comparing the temperature measured by the temperature measuring device with a predetermined reference temperature value, and outputting the result as a control signal, a quartz heater for heating the chemical solution, a power supply controller for receiving the control signal and adjusting the power supplied to the quartz heater, and a power switch connected to the power supply controller, for receiving a heating initiation signal and switching power to the quartz heater, wherein a heater monitoring system is further provided for monitoring the operating states of the quartz heater and the power supply controller and notifying an operator of any problems.

公开(公告)号：US5827396A

公开(公告)日：1998-10-27

申请号：US773059

申请日：1996-12-24

申请人： Se-jong Ko ,  Pyeong-sik Jeon ,  Young-hwan Yun ,  Sang-young Moon

发明人： Se-jong Ko ,  Pyeong-sik Jeon ,  Young-hwan Yun ,  Sang-young Moon

IPC分类号： H01L21/683 ,  H01L21/00 ,  H01L21/306 ,  C23F1/00 ,  C03C25/06

CPC分类号： H01L21/67086 ,  H01L21/67075

摘要： A wet etching device used in manufacturing a semiconductor device includes a power source, a transmission device for transmitting power from the power source, and a roller for reversing top and bottom positions of a wafer placed in a processing bath using power from the power source transmitted by the transmission device. Here, the initial top and bottom positions of the wafer during loading are reversed before unloading. Accordingly, the entire surface of the wafer spends an equal amount of time in the processing bath containing a chemical solution and can thus be etched uniformly.

摘要翻译： 用于制造半导体器件的湿式蚀刻装置包括电源，用于从电源传输电力的传输装置，以及用于使用来自发送的电源的电力来放置在处理槽中的晶片的顶部和底部位置的辊 由传动装置。 这里，加载期间晶片的初始顶部和底部位置在卸载之前被反转。 因此，晶片的整个表面在含有化学溶液的处理槽中花费等量的时间，因此可以被均匀地蚀刻。

公开(公告)号：US06436809B1

公开(公告)日：2002-08-20

申请号：US09645615

申请日：2000-08-25

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  C09K13/04 ,  H01L21/3212 ,  Y10S438/981

摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KlO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group comprising HF, NH4OH, H3PO4, H2SO4, and HCl, and a buffer solution formed by mixing them at certain rates.

摘要翻译： 提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。 还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。 制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜 钨膜仅存在于不存在于绝缘膜上的接触孔内。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。

公开(公告)号：US06232228B1

公开(公告)日：2001-05-15

申请号：US09325389

申请日：1999-06-04

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： H01L2144

CPC分类号： C09K13/04 ,  H01L21/3212 ,  H01L21/7684

摘要： A method of manufacturing semiconductor devices is provided, including the formation of a conductive plug and the minimizing of the step-height of an interlayer dielectric layer. An etching composition is also provided for such a manufacturing method. The method of manufacturing semiconductor devices includes the steps of forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a conductive layer over the insulating layer to burying the contact holes, rotating the semiconductor substrate, and etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate, and spin-etching the tungsten layer using an etching composition such that the conductive layer remains only inside the contact holes and does not remain over the insulating layer. The etching composition includes at least one oxidant selected from H2O2, O2, IO4−, BrO3, ClO3, S2O8−, KIO3, H5IO6, KOH and HNO3, at least enhancer selected from HF, NH4OH, H3PO4, H2SO4, NH4F and HCl, and a buffer solution, mixed together in certain amounts.

摘要翻译： 提供一种制造半导体器件的方法，包括形成导电插塞并使层间绝缘层的阶梯高度最小化。 还提供了用于这种制造方法的蚀刻组合物。 制造半导体器件的方法包括以下步骤：在半导体衬底上形成绝缘层，在绝缘层中形成接触孔，在绝缘层上形成导电层以埋入接触孔，旋转半导体衬底，并蚀刻导电 通过在旋转半导体衬底上提供蚀刻组合物，并且使用蚀刻组合物旋转蚀刻钨层，使得导电层仅保留在接触孔内部，并且不保留在绝缘层上。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少选自HF，NH 4 OH，H 3 PO 4，H 2 SO 4，NH 4 F和HCl的增强剂， 缓冲溶液，以一定量混合在一起。

公开(公告)号：US6140233A

公开(公告)日：2000-10-31

申请号：US109922

申请日：1998-07-02

申请人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

发明人： Gyu-hwan Kwag ,  Se-jong Ko ,  Kyung-seuk Hwang ,  Jun-ing Gil ,  Sang-o Park ,  Dae-hoon Kim ,  Sang-moon Chon ,  Ho-Kyoon Chung

IPC分类号： C09K13/04 ,  H01L21/321 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/7684 ,  C09K13/04 ,  H01L21/3212 ,  Y10S438/981

摘要： A method of manufacturing semiconductor devices is provided for forming a tungsten plug or polysilicon plug and minimizing the step-height of the intermediate insulating layer. An etching composition for this process is also provided as are semiconductor devices manufactured by this process. The method of manufacturing semiconductor devices includes the steps of forming a tungsten film having a certain thickness on an insulating layer and burying contact holes formed in the insulating layer constituting a specific semiconductor structure, and spin-etching the tungsten film using a certain etching composition such that the tungsten film is present only inside the contact holes not existing on the insulating film. The etching composition includes at least one oxidant selected from the group comprising H.sub.2 O.sub.2, O.sub.2, IO.sub.4.sup.-, BrO.sub.3, ClO.sub.3, S.sub.2 O.sub.8.sup.-, KlO.sub.3, H.sub.5 IO.sub.6, KOH, and HNO.sub.3, at least one enhancer selected from the group comprising HF, NH.sub.4 OH, H.sub.3 PO.sub.4, H.sub.2 SO.sub.4, and HCl, and a buffer solution formed by mixing them at certain rates.

摘要翻译： 提供一种制造半导体器件的方法，用于形成钨插塞或多晶硅插塞，并使中间绝缘层的阶梯高度最小化。 还提供了用于该工艺的蚀刻组合物，与通过该工艺制造的半导体器件一样。 制造半导体器件的方法包括以下步骤：在绝缘层上形成具有一定厚度的钨膜，并且在构成特定半导体结构的绝缘层中形成的埋入接触孔，并使用一定的蚀刻组合物旋转蚀刻钨膜 钨膜仅存在于不存在于绝缘膜上的接触孔内。 蚀刻组合物包括至少一种选自H 2 O 2，O 2，O 4 - ，BrO 3，ClO 3，S 2-8 - ，KIO 3，H 5 O 6，KOH和HNO 3的氧化剂，至少一种选自HF，NH 4 OH，H 3 PO 4 ，H 2 SO 4和HCl，以及通过以一定速率混合形成的缓冲溶液。