公开(公告)号：US4564816A

公开(公告)日：1986-01-14

申请号：US608415

申请日：1984-05-09

申请人： Mahesh Kumar ,  James C. Whartenby

发明人： Mahesh Kumar ,  James C. Whartenby

IPC分类号： H03F1/32

CPC分类号： H03F1/3241

摘要： A predistortion circuit for use with a solid state power amplifier or traveling wave tube amplifier which exhibits phase and amplitude nonlinearities. The predistortion circuit, which produces gain and phase distortion complementary to that of the associated power amplifier, comprises a hybrid circuit for splitting the input signal into two output signals at respective output terminals, the signals having a relative phase difference of 90.degree., a pair of dual gate FETs or other active nonlinear devices each connected to a different one of the two output terminals and a combiner for combining in-phase the outputs of the nonlinear devices. Bias on the nonlinear devices is adjusted to effect, in the predistortion circuit, nonlinearities complementary to those of the power amplifier.

摘要翻译： 一种用于具有相位和幅度非线性的固态功率放大器或行波管放大器的预失真电路。 产生与相关功率放大器互补的增益和相位失真的预失真电路包括一个混合电路，用于将输入信号分成两个相应输出端的输出信号，该信号的相对相位差为90°，一对 的双栅极FET或其他有源非线性器件，每个连接到两个输出端子中的不同的一个，以及用于组合非线性器件的输出的同相的组合器。 在预失真电路中，非线性器件上的偏置被调整为与功率放大器互补的非线性。

公开(公告)号：US4554514A

公开(公告)日：1985-11-19

申请号：US685241

申请日：1984-12-21

申请人： James C. Whartenby ,  Mahesh Kumar

发明人： James C. Whartenby ,  Mahesh Kumar

IPC分类号： H03F1/32 ,  H03F1/26 ,  H03C1/06 ,  H04B1/12

CPC分类号： H03F1/3247 ,  H03F1/3288 ,  H03F2200/438

摘要： A predistortion circuit for a microwave power amplifier which exhibits phase and amplitude nonlinearities and has a small signal gain equal to a. The phase distortion circuit includes a 180.degree. coupler, a first coupler for coupling a given fraction of the input power to the 180.degree. coupler and a second coupler for coupling the given fraction of the power output from the amplifier, reduced by a, to the 180.degree. coupler. The 180.degree. coupler has a difference output port at which a signal appears which corresponds substantially to the difference in phase between the two signals input to the 180.degree. coupler and has a sum port at which a signal appears which corresponds substantially to the sum in amplitude between the two signals input thereto.A phase change circuit and attenuator are coupled between the first coupler and input to the power amplifier. Signals related to the signals produced at the difference port and sum port of the 180.degree. coupler are utilized to control the amount of phase change in the phase change circuit and the amount of attenuation in the attenuator circuit to thereby reduce the phase and amplitude nonlinearities of the signal produced by the power amplifier.

摘要翻译： 一种用于微波功率放大器的预失真电路，其具有相位和幅度非线性并且具有等于a的小信号增益。 相位失真电路包括180°耦合器，用于将输入功率的给定部分耦合到180°耦合器的第一耦合器和用于将来自放大器的功率输出的给定部分（其减少a）耦合到第二耦合器的第二耦合器 180度耦合器。 180°耦合器具有差分输出端口，在该差分输出端口处出现信号，其基本上对应于输入到180°耦合器的两个信号之间的相位差，并且具有基本上相当于振幅之和的信号出现的和端口 在输入的两个信号之间。 相变电路和衰减器耦合在第一耦合器和输入到功率放大器之间。 与在180°耦合器的差分端口和和端口产生的信号相关的信号用于控制相变电路中的相位变化量和衰减器电路中的衰减量，从而降低相位和幅度非线性 由功率放大器产生的信号。

公开(公告)号：US4445978A

公开(公告)日：1984-05-01

申请号：US473551

申请日：1983-03-09

申请人： James C. Whartenby ,  Richard Brown ,  Srinivas T. Rao ,  Raymond J. Menna

发明人： James C. Whartenby ,  Richard Brown ,  Srinivas T. Rao ,  Raymond J. Menna

IPC分类号： C25D5/02 ,  H01L21/768 ,  H05K3/42 ,  C25D7/04

CPC分类号： C25D5/02 ,  H01L21/76898 ,  H05K3/423

摘要： A method is provided for fabricating a via connector from a first surface of a semiconductor wafer to an opposite second surface of the wafer. The first step consists of forming an adherent metal layer on the first surface on the semiconductor wafer. If the first surface of the semiconductor wafer has electronic components formed thereon, the metal layer is applied over the electronic components and preferably a protective layer of material is formed over the metal layer. Via holes are then laser drilled at predetermined locations through the metal layer and then through the semiconductor wafer. Thereafter a photoresist layer is applied over the first surface and exposed and developed to provide passage holes in the photoresist which are in alignment with the laser drilled apertures. The metal layer is then connected in the cathode position of the electroforming apparatus and via connectors are thereafter electroformed in the via holes.

摘要翻译： 提供一种用于从半导体晶片的第一表面到晶片的相对的第二表面制造通孔连接器的方法。 第一步包括在半导体晶片的第一表面上形成粘附金属层。 如果半导体晶片的第一表面具有形成在其上的电子部件，则将金属层施加在电子部件上，并且优选在金属层上形成材料保护层。 然后在预定位置通过金属层激光钻孔，然后穿过半导体晶片。 此后，将光致抗蚀剂层施加在第一表面上并暴露并显影以在光致抗蚀剂中提供与激光钻孔相对准的通孔。 然后将金属层连接在电铸装置的阴极位置，然后通孔连接器在通孔中电铸。