Decision support system for acute dynamic diseases
    1.
    发明授权
    Decision support system for acute dynamic diseases 有权
    急性动态疾病决策支持系统

    公开(公告)号:US08494871B2

    公开(公告)日:2013-07-23

    申请号:US12668431

    申请日:2008-07-11

    IPC分类号: G06Q10/00

    CPC分类号: G16H50/50 G06F19/00

    摘要: A medical apparatus (901, 100) assists clinicians, nurses or other users in choosing an intervention for the treatment of a patent suffering from an acute dynamic disease, e.g. sepsis. The medical apparatus is based on a method where a model of the disease is adapted or personalized to the patient. To ensure that the apparatus remains capable of predicting the health of the patient, the apparatus is continuously provided with new, more recent patient values and the model is continuously adapted to the new patient values. Since the medical apparatus is configured to be continuously adapted to current state of health, the apparatus is able to assist the user by generating disease management information, e.g. suggestions for medications, to an output device (902, 104).

    摘要翻译: 医疗器械(901,100)帮助临床医生,护士或其他用户选择治疗患有急性动态疾病的专利的干预措施,例如, 败血症 该医疗装置是基于对患者的疾病模型进行适应或个性化的方法。 为了确保该装置能够预测患者的健康状态,该装置被连续地提供有新的更新的患者值,并且该模型连续地适应于新的患者值。 由于医疗装置被配置为连续地适应当前健康状态,因此该装置能够通过产生疾病管理信息来辅助用户,例如, 对药物的建议,输出设备(902,104)。

    DECISION SUPPORT SYSTEM FOR ACUTE DYNAMIC DISEASES
    2.
    发明申请
    DECISION SUPPORT SYSTEM FOR ACUTE DYNAMIC DISEASES 有权
    急性动态疾病决策支持系统

    公开(公告)号:US20100256457A1

    公开(公告)日:2010-10-07

    申请号:US12668431

    申请日:2008-07-11

    IPC分类号: A61B5/00

    CPC分类号: G16H50/50 G06F19/00

    摘要: The present invention relates to a medical apparatus (901, 100) for assisting clinicians, nurses or other users in choosing an intervention for the treatment of a patent suffering from an acute dynamic disease, e.g. sepsis. The medical apparatus is based on a method where a model of the disease is adapted or personalised to the patient. To ensure that the apparatus remains capable of predicting the health of the patient, the apparatus is continuously-provided with new patient values and the model is continuously adapted to the new patient values. Since the medical apparatus is configured to be continuously adapted to current state of health, the apparatus is able to assist the user by generating disease management information, e.g. suggestions for medications, to an output device (902, 104).

    摘要翻译: 本发明涉及一种用于帮助临床医生,护士或其他用户选择用于治疗患有急性动态疾病的专利的干预的医疗设备(901,100),例如, 败血症 该医疗装置是基于对患者的疾病模型进行适应或个性化的方法。 为了确保该装置能够预测患者的健康状态,该装置被连续地提供新的患者值,并且该模型连续地适应于新的患者值。 由于医疗装置被配置为连续地适应当前健康状态,因此该装置能够通过产生疾病管理信息来辅助用户,例如, 对药物的建议,输出设备(902,104)。

    PRE-EXAMINATION MEDICAL DATA ACQUISITION SYSTEM
    3.
    发明申请
    PRE-EXAMINATION MEDICAL DATA ACQUISITION SYSTEM 审中-公开
    预检医学数据采集系统

    公开(公告)号:US20100332250A1

    公开(公告)日:2010-12-30

    申请号:US12747645

    申请日:2008-12-10

    CPC分类号: G06Q99/00 G06Q50/22 G16H10/20

    摘要: A pre-examination patient information gathering system comprises an electronic user interface (30, 130) including a display (32) and at least one user input device (34, 36), and an electronic processor (50) configured to present an initial set of questions (54) to a patient via the electronic user interface, receive responses to the initial set of questions from the patient via the electronic user interface, construct or select follow-up questions (68) based on the received responses, present the constructed or selected follow up questions to the patient via the electronic user interface, and receive responses to the constructed or selected follow up questions from the patient via the electronic user interface. A physiological sensor (70, 72, 74, 76, 78, 80) may be configured to autonomously sense a patient physiological parameter as the patient interacts with the electronic user interface.

    摘要翻译: 预检患者信息收集系统包括包括显示器(32)和至少一个用户输入设备(34,36)的电子用户界面(30,130)和被配置为呈现初始设置的电子处理器(50) 通过电子用户界面向患者提供问题(54),经由电子用户界面从患者接收对初始问题集的响应,基于接收到的响应构建或选择后续问题(68),呈现构建的 或经由电子用户界面向患者选择的后续问题,并且经由电子用户界面从患者接收对所构建或选择的跟进问题的响应。 生理传感器(70,72,74,76,78,80)可以被配置为当患者与电子用户界面交互时自主地感测患者生理参数。

    Selective antipad backdrilling for printed circuit boards
    4.
    发明授权
    Selective antipad backdrilling for printed circuit boards 有权
    针对印刷电路板的选择性反倾销回钻

    公开(公告)号:US09202783B1

    公开(公告)日:2015-12-01

    申请号:US13070858

    申请日:2011-03-24

    IPC分类号: H01L23/498 H01R9/00

    摘要: A printed circuit board (PCB) may include antipads, used to provide clearance for backdrilling, which may be sized to allow backdrilling in a way that minimizes the presence of stubs. The PCB may include pads to connect a component to the PCB and vertically disposed vias connected to at least some of the pads. The PCB may further include horizontally disposed signal layers, electrically connected by the vias, to route signals from the component, received from the vias, to an edge of the component, in which signals associated with the component closer to an inner portion of the component are routed to the edge of the component on higher ones of the signal layers than signals associated with the component further from the inner portion of the component.

    摘要翻译: 印刷电路板(PCB)可以包括用于提供反向钻削的间隙的反夹具,其可以被设计成允许以最小化存根的存在的方式进行回钻。 PCB可以包括用于将部件连接到PCB的焊盘和连接到至少一些焊盘的垂直布置的通孔。 PCB还可以包括水平布置的信号层,其通过通孔电连接,以将从通孔接收的部件的信号路由到部件的边缘,其中与组件相关联的信号更靠近部件的内部部分 在信号层的较高层上被路由到组件的边缘,而不是与组件的内部部分相关联的信号。

    System and method for ensuring QOS in a token ring network utilizing an
access regulator at each node for allocating frame size for plural
transmitting applications based upon negotiated information and
priority in the network
    5.
    发明授权
    System and method for ensuring QOS in a token ring network utilizing an access regulator at each node for allocating frame size for plural transmitting applications based upon negotiated information and priority in the network 失效
    根据协商的信息和网络中的优先级,利用每个节点处的访问调节器确保QOS在多个发送应用中分配帧大小的令牌环网络中的QOS的系统和方法

    公开(公告)号:US5634006A

    公开(公告)日:1997-05-27

    申请号:US540923

    申请日:1995-10-11

    摘要: A data processing system for regulating access to a communication network is disclosed herein. The data processing system employs a component that can be implemented in hardware logic or software. The component regulates access to the priority queue or transmit channel that is attached to the shared medium local area network section. All access to the priority queue or transmit channel must pass through this component, thus subjecting all communication transactions to rejection or tracking by the component. The component allocates a frame size based on the information to be transmitted and the priority to assure the transmission will be completed in line with the quality of service required. The component monitors the rate and size of messages to assure that an application's actual throughput does not exceed its negotiated throughput. The component, moreover, is capable of operating in correction mode where throughput and frame size violations are prevented and reported. Alternatively, the component operates in detection mode where violations are recorded and reported to an application.

    摘要翻译: 本文公开了一种用于调节对通信网络的访问的数据处理系统。 数据处理系统采用可在硬件逻辑或软件中实现的组件。 组件调节对连接到共享介质局域网部分的优先级队列或传输通道的访问。 所有访问优先级队列或传输通道必须通过该组件,从而使所有通信事务被组件拒绝或跟踪。 该组件根据要发送的信息和优先级分配帧大小,以确保根据所需服务质量完成传输。 组件监视消息的速率和大小,以确保应用程序的实际吞吐量不超过其协商的吞吐量。 此外,该组件能够在其中防止和报告吞吐量和帧大小违规的校正模式下操作。 或者,组件在检测模式下操作,其中记录违规并将其报告给应用。

    Dual gate oxide high-voltage semiconductor device
    6.
    发明授权
    Dual gate oxide high-voltage semiconductor device 有权
    双栅极氧化物高压半导体器件

    公开(公告)号:US06847081B2

    公开(公告)日:2005-01-25

    申请号:US10015847

    申请日:2001-12-10

    摘要: A dual gate oxide high-voltage semiconductor device and method for forming the same are provided. Specifically, a device formed according to the present invention includes a semiconductor substrate, a buried oxide layer formed over the substrate, a silicon layer formed over the buried oxide layer, and a top oxide layer formed over the silicon layer. Adjacent an edge of the top oxide layer, a dual gate oxide is formed. The dual gate oxide allows both specific-on-resistance and breakdown voltage of the device to be optimized.

    摘要翻译: 提供一种双栅极氧化物高压半导体器件及其制造方法。 具体地,根据本发明形成的器件包括半导体衬底,在衬底上形成的掩埋氧化物层,形成在掩埋氧化物层上的硅层和形成在硅层上的顶部氧化物层。 邻近顶部氧化物层的边缘,形成双栅氧化物。 双栅氧化物允许优化器件的导通电阻和击穿电压。

    Contoured nonvolatile memory cell
    7.
    发明授权
    Contoured nonvolatile memory cell 失效
    轮廓非易失性存储单元

    公开(公告)号:US06362504B1

    公开(公告)日:2002-03-26

    申请号:US08561960

    申请日:1995-11-22

    申请人: Mark R. Simpson

    发明人: Mark R. Simpson

    IPC分类号: H01L29788

    CPC分类号: H01L29/42324 H01L29/7881

    摘要: A nonvolatile memory cell of the type having a single lateral transistor includes source and drain regions separated by a channel region. A floating gate is provided over at least the channel region and is separated therefrom by a gate oxide, with a control gate over the floating gate and insulated therefrom. By having the floating gate extend over substantially its entire length at a substantially constant distance from the surface of the device, and providing the floating gate and the surface with similarly-contoured corners adjacent ends of the source and drain regions alongside the channel region, the nonvolatile memory cell can be programmed and erased using lower voltages than those required by priorart devices.

    摘要翻译: 具有单个横向晶体管的类型的非易失性存储单元包括由沟道区分隔开的源极和漏极区域。 浮动栅极至少设置在沟道区域上,并且通过栅极氧化物与栅极氧化物分离,并且在浮栅上方具有与之绝缘的控制栅极。 通过使浮动栅极在与器件表面基本上恒定的距离上基本上跨越其整个长度延伸,并且使浮置栅极和表面具有与沟道区域相邻的源极和漏极区域的相似轮廓的角部, 可以使用比先前设备所需电压更低的电压对非易失性存储单元进行编程和擦除。

    Dual gate oxide high-voltage semiconductor device and method for forming the same
    8.
    发明授权
    Dual gate oxide high-voltage semiconductor device and method for forming the same 有权
    双栅氧化物高压半导体器件及其形成方法

    公开(公告)号:US07268046B2

    公开(公告)日:2007-09-11

    申请号:US11003991

    申请日:2004-12-03

    IPC分类号: H01L21/336 H01L21/8234

    摘要: A dual gate oxide high-voltage semiconductor device and method for forming the same are provided. Specifically, a device formed according to the present invention includes a semiconductor substrate, a buried oxide layer formed over the substrate, a silicon layer formed over the buried oxide layer, and a top oxide layer formed over the silicon layer. Adjacent an edge of the top oxide layer, a dual gate oxide is formed. The dual gate oxide allows both specific-on-resistance and breakdown voltage of the device to be optimized.

    摘要翻译: 提供一种双栅极氧化物高压半导体器件及其制造方法。 具体地,根据本发明形成的器件包括半导体衬底,在衬底上形成的掩埋氧化物层,形成在掩埋氧化物层上的硅层和形成在硅层上的顶部氧化物层。 邻近顶部氧化物层的边缘,形成双栅氧化物。 双栅氧化物允许优化器件的导通电阻和击穿电压。

    Memory systems and methods
    9.
    发明授权
    Memory systems and methods 失效
    内存系统和方法

    公开(公告)号:US07113418B2

    公开(公告)日:2006-09-26

    申请号:US10700389

    申请日:2003-11-04

    IPC分类号: G11C6/06 G11C7/00

    摘要: Memory systems and methods are described. In one embodiment, a circuit board has front and back surfaces. At least one memory device having a plurality of pins is mounted on the front surface of the circuit board. At least one other memory device having a plurality of pins is mounted on the back surface of the circuit board. The memory devices are mounted on the circuit board such that at least some pins from the one memory device align with at least some pins of the other memory device to provide aligned pin pairs. A via is disposed in the circuit board and extends between and connects individual pins of an aligned pin pair.

    摘要翻译: 描述了内存系统和方法。 在一个实施例中,电路板具有正面和背面。 具有多个引脚的至少一个存储器件安装在电路板的前表面上。 具有多个引脚的至少一个其它存储器件安装在电路板的后表面上。 存储器件安装在电路板上,使得来自一个存储器件的至少一些引脚与另一个存储器件的至少一些引脚对准以提供对准的引脚对。 通孔设置在电路板中,并且在对准的销对的各个销之间延伸并连接。