摘要:
Apparatus and methods for simulating a sheet source with a line source for determining normalization coefficients for the detectors in positron emission tomography (PET) scanners and single photon emission computed tomography (SPECT) scanners. A line source, oriented perpendicular to the axis of a scanner gantry, is moved along the axis while the detectors are stationary and positioned substantially parallel to the plane in which the source moves. In another embodiment, an axially mounted line source moves parallel to a diameter of the gantry while the stationary detectors are positioned substantially parallel to the plane in which the source moves. In still another embodiment, the line source is stationary and positioned parallel to the gantry axis and off center while the detectors move relative to the line source. A shaped attenuator is placed around the source in this last embodiment.
摘要:
A system identifies when received packets are lost at a node in a multi-node processing chain. The system processing chain may include a gantry interface module for receiving coincident event data from a PET (Positron Emission Tomography) detector array, a DMA (direct memory access) rebinner card, and a transmission line coupled between the gantry interface module and the DMA card. FPGA and FIFO elements in each processing portion receive packets that may be lost if there is insufficient FIFO capacity. Lost packets are marked, discarded, and counted. At specified intervals, set in accordance with a threshold number of packets received a lost tally data packet is generated that includes count information for lost packets. The lost tally data packet is forwarded downstream when sufficient storage capacity exists.
摘要:
A system identifies when received packets are lost at a node in a multi-node processing chain. The system processing chain may include a gantry interface module for receiving coincident event data from a PET (Positron Emission Tomography) detector array, a DMA (direct memory access) rebinner card, and a transmission line coupled between the gantry interface module and the DMA card. FPGA and FIFO elements in each processing portion receive packets that may be lost if there is insufficient FIFO capacity. Lost packets are marked, discarded, and counted. At specified intervals, set in accordance with a threshold number of packets received a lost tally data packet is generated that includes count information for lost packets. The lost tally data packet is forwarded downstream when sufficient storage capacity exists.
摘要:
Apparatus and methods for three dimensional image reconstruction from data acquired in a positron emission tomograph (PET). This invention uses a parallel/pipelined architecture for processing the acquired data as it is acquired from the scanner. The asynchronously acquired data is synchronously stepped through the stages performing histogramming, normalization, transmission/attenuation, Mu image reconstruction, attenuation correction, rebinning, image reconstruction, scatter correction, and image display.
摘要:
A gated diode memory cell is provided, including one or more transistors, such as field effect transistors (“FETs”), and a gated diode in signal communication with the FETs such that the gate of the gated diode is in signal communication with the source of a first FET, wherein the gate of the gated diode forms one terminal of the storage cell and the source of the gated diode forms another terminal of the storage cell, the drain of the first FET being in signal communication with a bitline (“BL”) and the gate of the first FET being in signal communication with a write wordline (“WLw”), and the source of the gated diode being in signal communication with a read wordline (“WLr”).
摘要:
A circuit comprises a control line and a two terminal semiconductor device having first and second terminals. The first terminal is coupled to a signal line, and the second terminal is coupled to the control line. The two terminal semiconductor device is adapted to have a capacitance when a voltage on the first terminal relative to the second terminal is above a threshold voltage and to have a smaller capacitance when a voltage on the first terminal relative to the second terminal is below the threshold voltage. The control line is coupled to a control signal and the signal line is coupled to a signal and is output of the circuit. A signal is placed on the signal line and voltage on the control line is modified (e.g., raised in the case of n-type devices, or lowered for a p-type devices). When the signal falls below the threshold voltage, the two terminal semiconductor device acts as a very small capacitor and the output of the circuit will be a small value. When the signal is above the threshold voltage, the two terminal semiconductor device acts as a large capacitor and the output of the circuit will be influenced by both the value of the signal and the value of the modified voltage on the control line and therefore the signal will be amplified.
摘要:
A dynamic random access memory cell is disclosed that comprises a capacitive storage device and a write access transistor. The write access transistor is operatively coupled to the capacitive storage device and has a gate stack that comprises a high-K dielectric, wherein the high-K dielectric has a dielectric constant greater than a dielectric constant of silicon dioxide. Also disclosed are a memory array using the cells, a computing apparatus using the memory array, a method of storing data, and a method of manufacturing.
摘要:
A dynamic random access memory circuit has at least one write bit line, at least one read bit line, a capacitive storage device, a write access device operatively coupled to the capacitive storage device and the at least one write bit line, a sense amplifier operatively coupled to the at least one read bit line and configured to generate an output signal, and a refresh bypass device operatively associated with the sense amplifier and the at least one write bit line so as to selectively pass the output signal to the at least one write bit line.
摘要:
A sense amplifier circuit comprises (1) an isolation device comprising a control terminal and first and second terminals, the first terminal of the isolation device coupled to a signal line, (2) a gated diode comprising first and second terminals, the first terminal of the gated diode coupled to the second terminal of the isolation device, and the second terminal of the gated diode coupled to a set line; and (3) control circuitry coupled to the control terminal of the isolation device and adapted to control voltage on the control terminal of the isolation device in order to enable and disable the isolation device. A latch circuit further comprises a precharge device comprising a control terminal and first and second terminals, the first terminal of the precharge device coupled to a power supply voltage, and the second terminal of the precharge device coupled to the first terminal of the isolation device.
摘要:
An integrated circuit, such as a memory macro, includes multiple power rails supporting first and second voltage differentials, with the second voltage differential being smaller than the first voltage differential. Signal lines in the integrated circuit are driven with the small voltage swing, which is generated by small swing circuits. The integrated circuit further includes regeneration circuits, which are receiving small voltage swing inputs and are outputting first, or full voltage swings. The application of the small voltage swing to the signal lines saves power in the integrated circuit. A wide bandwidth, full-wordline I/O, memory integrated circuit has simultaneously operable connection paths between essentially all the memory cells that are attached to the same wordline and the corresponding I/O terminals, and it has a single ended data-line structure.