利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.015 秒)

    Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials
    3.
    发明授权
    Optical information storage systems and methods using heterostructures comprising ternary group III-V nitride semiconductor materials 失效
    使用包含三元III-V族氮化物半导体材料的异质结构的光学信息存储系统和方法

    公开(公告)号：US5875052A

    公开(公告)日：1999-02-23

    申请号：US924567

    申请日：1997-09-05

    申请人： Irina K. Shmagin ,  John F. Muth ,  Robert M. Kolbas

    发明人： Irina K. Shmagin ,  John F. Muth ,  Robert M. Kolbas

    IPC分类号： G11B7/0045 ,  G11B7/005 ,  G11B7/125 ,  G11B7/14 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253 ,  G11B7/257 ,  G11C13/04

    CPC分类号： G11B7/243 ,  G11B7/00455 ,  G11B7/0052 ,  G11B7/127 ,  G11B7/253 ,  G11B7/257 ,  G11B2007/24306 ,  G11B2007/2431 ,  G11B2007/24314 ,  G11B2007/24322 ,  G11B7/14 ,  G11B7/24

    摘要： Spatially localized radiation, preferably ultraviolet visible radiation, representing information is impinged onto a spatially localized area of a heterostructure comprising a ternary Group III-V Nitride semiconductor material. It has been found that the spatially localized optical radiation reversibly changes the properties of the heterostructure comprising ternary Group III-V Nitride semiconductor material in the spatially localized area, to thereby provide an optical memory. The stored information can be read from the memory by impinging blanket radiation, preferably ultraviolet radiation of the same frequency which was used to write the information, onto the heterostructure comprising ternary Group III-V Nitride semiconductor material including onto the spatially localized area thereof. Simultaneously, the changes in the properties of the heterostructure comprising ternary Group III-V Nitride semiconductor material in the spatially localized area as a result of the impinged blanket radiation are detected, to thereby read the information. Thus, high density, high contrast patterns can be written in spatially localized areas of a heterostructure comprising ternary Group III-V Nitride semiconductor material with ultraviolet light at room temperature and at cryogenic temperatures.

    摘要翻译： 表示信息的空间定位辐射，优选紫外可见辐射，撞击到包含三元III-V族氮化物半导体材料的异质结构的空间局部区域上。 已经发现，空间局部化的光辐射可逆地改变在空间局部区域中包含三元III-V族氮化物半导体材料的异质结构的性质，从而提供光学存储器。 存储的信息可以通过将用于写入信息的相同频率的毯式辐射（优选地是紫外线辐射）包含在包括在其空间局部区域上的三元III-V族氮化物半导体材料的异质结构上而从存储器读取。 同时，检测在空间局部区域中包含三次III-V族氮化物半导体材料的异质结构性质的变化，作为冲击的覆盖层辐射的结果，从而读取信息。 因此，高密度，高对比度图案可以写入包含三元III-V族氮化物半导体材料的异质结构的空间局部区域，在室温和低温下具有紫外光。