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公开(公告)号：US4818722A
公开(公告)日：1989-04-04
申请号：US54237
申请日：1987-05-26
申请人： Jochen Heinen
发明人： Jochen Heinen
IPC分类号： G02B6/136 , H01S5/227 , H01L21/208
CPC分类号： G02B6/136 , H01S5/227 , H01S5/2275 , Y10S148/029 , Y10S148/05 , Y10S148/065 , Y10S148/066 , Y10S148/072 , Y10S148/108 , Y10S438/955
摘要： A method for generating a strip laser in a buried hetero-structure composed of layers, wherein a raised strip is etched out of the layer structure and the strip is laterally etched with an erosion melt. The lateral edges of the laser active layer are protected by leaving them covered with a portion of the layer dissolved out by the erosion melt. The deposits thus remaining are used to initiate the generation of an epitaxial layer which extends laterally from the laser-active layer.
摘要翻译： 一种用于在由层组成的掩埋异质结构中产生条状激光的方法，其中凸起的条被蚀刻出层结构，并且带被侵蚀熔融物横向蚀刻。 通过使激光活性层的侧边缘被被侵蚀熔体溶出的一部分层所覆盖而被保护。 这样保留的沉积物用于开始从激光 - 活性层横向延伸的外延层的产生。
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2.发明授权
公开(公告)号：US3962716A
公开(公告)日：1976-06-08
申请号：US463870
申请日：1974-04-25
IPC分类号： H01L21/208 , H01L33/00 , H01S5/00 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/18 , H01L29/161 , H01L29/205
CPC分类号： H01S5/32308 , H01L33/0025 , H01S5/20 , H01S5/2059 , H01S5/223 , H01S5/3211 , Y10S148/065 , Y10S148/066 , Y10S148/067 , Y10S148/097 , Y10S148/107 , Y10S438/938
摘要： Described is a procedure for virtually eliminating disclocations in multilayer structures of materials having a crystallographic zinc-blend structure, in particular quaternary layers of Al.sub.y Ga.sub.1.sub.-y As.sub.1.sub.-z P.sub.z grown on Al.sub.x Ga.sub.1.sub.-x As substrates (y > x .gtoreq. 0). By carefully controlling the quaternary layer thickness and the lattice parameter mismatch at the growth temperature, it is possible to change the direction of substrate dislocations as they enter the substrate/layer interface. The length of the dislocation in the interfacial plane can be extended so that it is "infinitely" long, i.e., it reaches the edge of the wafer. As a result, the epitaxial quaternary layer and all layers subsequently grown thereon will be virtually dislocation free, provided that the thickness, stress and uniformity of the layers are such that no surface dislocation souces are activated. Also described are double heterostructure junction lasers with reduced values of both stress and dislocations.
摘要翻译： 描述了在Al x Ga 1-x As衬底（y> x> / = 0）上生长的具有结晶学锌共混结构，特别是Al y Ga 1-y As 1-z P z的四周层的材料的多层结构中的位移的步骤。 通过在生长温度下小心地控制四元层厚度和晶格参数不匹配，可以在衬底位错进入衬底/层界面时改变衬底位错的方向。 界面中位错的长度可以延长，使其“无限”长，即到达晶片的边缘。 结果，随后在其上生长的外延四元层和所有层将实际上是无位错的，只要层的厚度，应力和均匀性使得没有表面位错层被激活。 还描述了具有减小的应力和位错值的双异质结结形激光器。
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公开(公告)号：US5834331A
公开(公告)日：1998-11-10
申请号：US733271
申请日：1996-10-17
申请人： Manijeh Razeghi
发明人： Manijeh Razeghi
CPC分类号： H01L33/32 , B82Y20/00 , H01L31/1844 , H01L33/007 , H01S5/343 , H01S5/0213 , H01S5/34333 , Y02E10/544 , Y10S148/003 , Y10S148/065 , Y10S148/066
摘要： A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an Al.sub.x Ga.sub.1-x N alloy (X=0.fwdarw.1) with In.sub.y Ga.sub.1-Y N (Y=0.fwdarw.1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer layers of p-type material are grown on a substrate and then doped. The active, confinement and cap layers of n-type material are next grown and doped. The structure is masked and etched as required to expose a surface which is ion implanted and annealed. A p-type surface contact is formed on this ion-implanted surface which is of sufficiently low resistance as to provide good quality performance for use in a device.
摘要翻译： 公开了用于光电导体和二极管的引脚结构，由Al x Ga 1-x N合金（X = 0→1）与InGaGa1-YN（Y = 0→1）形成，其通过MOCVD方法与p- 类型层。 在本发明的方法中，在衬底上生长p型材料的缓冲层，然后掺杂。 接下来生长和掺杂n型材料的活性，限制和盖层。 根据需要对该结构进行掩模和蚀刻以暴露离子注入和退火的表面。 在该离子注入表面上形成p型表面接触，其具有足够低的电阻，以提供用于器件的良好质量性能。
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公开(公告)号：US5707891A
公开(公告)日：1998-01-13
申请号：US798130
申请日：1991-11-26
申请人： Tadasu Izumi , Masamichi Harada , Yukari Inoguchi
发明人： Tadasu Izumi , Masamichi Harada , Yukari Inoguchi
CPC分类号： H01L33/0062 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , Y10S148/066 , Y10S148/119
摘要： A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.
摘要翻译： 一种制造发光二极管的方法，其包括以下步骤：使p型或n型半导体衬底在高温下与生长溶液接触，然后降低温度以形成单晶外延层 与半导体衬底上的半导体衬底相同的类型，随后进一步降低上述温度以形成与外延层上的外延层相反类型的第一单晶外延层，然后切断生长溶液以形成 外延晶片的结果是在高温下与外延晶片的第一外延层接触的生长溶液，然后降低温度以形成与第一外延层相同种类和类型的第二单晶外延层， 第一个外延层。
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公开(公告)号：US4870468A
公开(公告)日：1989-09-26
申请号：US95114
申请日：1987-09-11
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2277 , Y10S148/05 , Y10S148/051 , Y10S148/066 , Y10S148/095 , Y10T29/413
摘要： An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type Inp cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.
摘要翻译： 在衬底的n型InP缓冲层上形成有源层。 一对带状槽形成有源层，以将其分成收缩部分和侧部。 在有源层和沟槽的整个表面上沉积p型Inp覆层。 选择性地蚀刻包覆层以形成包括中心活性部分的台面部分并暴露缓冲层。 在台面部分和缓冲层上涂布绝缘膜，制成半导体发光元件。
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公开(公告)号：US4859628A
公开(公告)日：1989-08-22
申请号：US179834
申请日：1988-04-11
申请人： Douglas G. Knight , William Benyon
发明人： Douglas G. Knight , William Benyon
IPC分类号： H01L21/208 , H01L33/00 , H01S5/12 , H01S5/323
CPC分类号： H01L33/0062 , H01L21/02392 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01S5/12 , H01S5/1231 , H01S5/32391 , Y10S148/066 , Y10S148/101
摘要： An interrupted liquid phase epitaxy process for producing distributed feedback laser wafers involves epitaxial growth at a first temperature range followed by epitaxial growth at a second higher temperature range. A prior art liquid phase epitaxy process involves a low temperature soak at a temperature of approximately 615 degrees Centrigrade followed by ramped cooling and epitaxial growth of a guiding layer, active layer and confining layer at a temperature of approximately 595 degrees Centigrade. The interrupted liquid phase epitaxy process involves epitaxial growth of a guiding layer in a manner similar to the prior art process, but growth of the guiding layer is followed by a high temperature soak at a temperature of approximately 645 degrees Centrigrade. Ramped cooling follows, with epitaxial growth of the active layer and confining layer taking place at a temperature of approximately 628 degrees Centigrade. Epitaxial growth at the higher temperature reduces difficulties with spinodal decomposition and allows improved control over the amount of phosphorus used in the process.
摘要翻译： 用于产生分布式反馈激光晶片的中断液相外延工艺涉及在第一温度范围外延生长，随后在第二较高温度范围进行外延生长。 现有技术的液相外延工艺涉及在约615摄氏度的温度下的低温浸泡，然后在大约595摄氏度的温度下引导层，活性层和约束层的斜面冷却和外延生长。 中断的液相外延过程涉及以与现有技术方法类似的方式外延生长引导层，但是引导层的生长之后是在大约645摄氏度的温度下高温浸泡。 斜面冷却如下，活性层和约束层的外延生长在约628摄氏度的温度下进行。 在较高温度下的外延生长降低了亚稳态分解的难度，并且可以改善对该方法中使用的磷的量的控制。
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公开(公告)号：US4849373A
公开(公告)日：1989-07-18
申请号：US201155
申请日：1988-06-02
申请人： D. Gordon Knight , William Benyon
发明人： D. Gordon Knight , William Benyon
IPC分类号： H01L21/208
CPC分类号： H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628 , H01L21/02639 , Y10S148/023 , Y10S148/066 , Y10S148/095 , Y10S148/101
摘要： In a method for Liquid Phase Epitaxy (LPE) of semi-insulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperature below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers.
摘要翻译： 在半绝缘InP的液相外延（LPE）的方法中，将熔融的In中的P，Ti和p型掺杂剂的溶液在衬底的表面的非氧化性环境中冷却，以生长外延层 的掺杂InP在表面。 溶液中p型掺杂剂的浓度使得生长的外延层中的p型掺杂剂的浓度大于生长的外延层中的任何残留污染物的聚集浓度，并且溶液中的Ti的浓度 使得生长的外延层中的Ti浓度大于生长的外延层中的p型掺杂剂的浓度。 根据经验确定所需的熔体浓度。 该方法可以在低于650摄氏度的温度下进行，并且特别适用于半绝缘InP的LPE生长以隔离InP-InGaAsP掩埋异质结构激光器。
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8.发明授权
公开(公告)号：US4597166A
公开(公告)日：1986-07-01
申请号：US464922
申请日：1983-02-08
申请人： Hiroshi Iwai
发明人： Hiroshi Iwai
IPC分类号： H01L29/78 , H01L21/322 , H01L29/06 , H01L21/461
CPC分类号： H01L29/0657 , Y10S148/06 , Y10S148/066 , Y10S438/928
摘要： A semiconductor substrate has a semiconductor substrate main body having a first major surface and a second major surface opposite thereto. At least one recess is formed in the second major surface. The recess defines a semiconductor element formation region between a bottom surface thereof and the first major surface of the substrate main body. Gettering of contaminant impurities such as heavy metals can be effectively performed at the rear surface of the substrate after the formation of a semiconductor element in the element formation region.
摘要翻译： 半导体基板具有具有第一主表面和与其相对的第二主表面的半导体基板主体。 在第二主表面中形成至少一个凹部。 凹部在其底表面和基板主体的第一主表面之间限定半导体元件形成区域。 在元件形成区域中形成半导体元件之后，可以在衬底的背面有效地进行污染物杂质如重金属的吸收。
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公开(公告)号：US4966863A
公开(公告)日：1990-10-30
申请号：US378692
申请日：1989-07-11
申请人： Hitoshi Mizuochi , Hideyo Higuchi
发明人： Hitoshi Mizuochi , Hideyo Higuchi
CPC分类号： H01S5/227 , H01S5/12 , H01S5/2272 , H01S5/2275 , Y10S148/025 , Y10S148/066 , Y10S148/095
摘要： A semiconductor laser device includes a current blocking structure having a p-n-p-n structure, provided on a first conductivity type semiconductor substrate, an active region buried in a stripe shaped groove produced in the current blocking structure, a lower cladding layer grown by liquid phase epitaxy approximately filling the stripe groove, an active layer on the lower cladding layer in the stripe groove, a waveguide layer on the active layer completely filling the groove, and a diffraction grating on the waveguide layer.
摘要翻译： 半导体激光器件包括具有pnpn结构的电流阻挡结构，设置在第一导电类型半导体衬底上，埋入在电流阻挡结构中产生的条形槽中的有源区，通过液相外延近似填充生长的下包层 条纹槽，条纹槽中的下包层上的有源层，有源层上完全填充槽的波导层，以及波导层上的衍射光栅。
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公开(公告)号：US4958202A
公开(公告)日：1990-09-18
申请号：US382345
申请日：1989-07-20
IPC分类号： H01S5/227
CPC分类号： H01S5/227 , H01S5/2277 , Y10S148/05 , Y10S148/051 , Y10S148/066 , Y10S148/095 , Y10T29/413
摘要： An active layer is formed on an n-type InP buffer layer of a substrate. A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion and side portions. A p-type InP cladding layer is deposited on the entire surface of the active layer and grooves. The cladding layer is selectively etched to form a mesa portion including the central active portion and expose the buffer layer. An insulating film is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.
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