公开(公告)号：US20090189164A1

公开(公告)日：2009-07-30

申请号：US12419821

申请日：2009-04-07

申请人： JAMES S. IM ,  Robert S. Sposili ,  Mark A. Crowder

发明人： JAMES S. IM ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L33/00

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

公开(公告)号：US06830993B1

公开(公告)日：2004-12-14

申请号：US09979201

申请日：2002-02-04

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L2120

CPC分类号： H01L21/02686 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/0853 ,  B23K26/3576 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/302 ,  H01L21/32115 ,  H01L21/67253 ,  Y10S438/942

摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.

摘要翻译： 公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。 在一种布置中，该系统包括用于产生预定注量的多个准分子激光脉冲的准分子激光器（110），能量密度调制器（120），用于可控地调制准分子激光脉冲的能量密度， 需要使薄膜完全熔化的光束均质化器（144），用于使预定平面中的调制激光脉冲同调化，用于接收均质化的激光脉冲以实现多晶或单晶薄膜的部分熔化的样品台（170） 对应于激光脉冲，用于可控地平移样品台（170）相对于激光脉冲的相对位置的平移装置，以及用于将准​​分子脉冲产生和能量密度调制与样品的相对位置协调的计算机（110） （170），从而通过样品台（170）相对于其的顺序平移来处理多晶或单晶薄膜 激光脉冲。

公开(公告)号：US06555449B1

公开(公告)日：2003-04-29

申请号：US09390535

申请日：1999-09-03

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L2120

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homogenized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beam let corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

摘要翻译： 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化， 均匀化注量控制的激光脉冲具有二维图案的狭缝，以产生线图案化的子束的注量控制脉冲序列，狭缝图案中的每个狭缝都足够窄，以防止在硅薄层的区域中诱发显着成核 由对应于狭缝的光束照射的薄膜样品，以能量密度控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化的子束的脉冲序列对应于每个注量受控的图案化子束脉冲的部分的熔化 ，并且可控地顺序地翻译相机 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

公开(公告)号：US08859436B2

公开(公告)日：2014-10-14

申请号：US12402208

申请日：2009-03-11

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L27/12 ,  G03F7/20 ,  B23K26/06 ,  H01L29/04

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, masking portions of each fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

摘要翻译： 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个受激准分子激光脉冲调制成预定的注量，以序列中的每个注量受控激光脉冲的部分掩蔽， 缝隙以产生线图案化子束的注量控制脉冲序列，用注量控制的狭缝图案化子束的顺序照射非晶硅薄膜样品以实现其部分的熔化，并且可控地顺序地将样品相对于 每个切口图案化的子束的注量控制脉冲，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

公开(公告)号：US08278659B2

公开(公告)日：2012-10-02

申请号：US12567414

申请日：2009-09-25

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L29/40

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homogenizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homogenized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

摘要翻译： 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个受激准分子激光脉冲调制成预定的注量，将序列中的每个调制的激光脉冲均匀化在预定的平面中， 均匀化注量控制的激光脉冲具有二维图案的狭缝，以产生线图案化的子束的注量控制脉冲序列，狭缝图案中的每个狭缝都足够窄，以防止在硅薄层的区域中诱发显着成核 通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化， 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

公开(公告)号：US07704862B2

公开(公告)日：2010-04-27

申请号：US11671917

申请日：2007-02-06

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/0853 ,  B23K26/3576 ,  B23K2101/40 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/302 ,  H01L21/32115 ,  H01L21/67253 ,  Y10S438/942

摘要： Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a sample stage for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage with respect to the laser pulses, and a computer for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage relative to the laser pulses.

摘要翻译： 公开了用于降低由顺序侧向凝固过程产生的多晶或单晶薄膜的表面粗糙度的系统和方法。 在一种布置中，该系统包括用于产生预定注量的多个准分子激光脉冲的准分子激光器，用于可控制地调制准分子激光脉冲的能量密度的能量密度调制器，使得注量低于完全熔化所需的能量密度 薄膜，用于在预定平面中均匀化调制的激光脉冲的光束均质化器，用于接收均质激光脉冲以实现对应于激光脉冲的多晶或单晶薄膜的部分熔化的样品台，用于可控地平移 样品台相对于激光脉冲的相对位置，以及用于将准​​分子脉冲产生和能量密度调制与样品台的相对位置协调的计算机，从而通过样品台的顺序转换来处理多晶或单晶薄膜 相对于激光脉冲。

公开(公告)号：US07319056B2

公开(公告)日：2008-01-15

申请号：US11141815

申请日：2005-06-01

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L21/84

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

摘要翻译： 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化， 均匀注入能量密度控制的激光脉冲具有两维狭缝图案的序列，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄以防止在硅薄层区域中引起显着成核 通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化， 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

公开(公告)号：US20130009074A1

公开(公告)日：2013-01-10

申请号：US13596693

申请日：2012-08-28

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L21/268

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. One method includes generating a sequence of excimer laser pulses, controllably modulating each pulse to a predetermined fluence, homoginizing each modulated pulse in a predetermined plane, masking portions of each homoginized pulse with a pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions corresponding to each fluence controlled patterned beamlet pulse, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets.

摘要翻译： 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 一种方法包括产生准分子激光脉冲序列，可控制地将每个脉冲调制到预定的注量，在每个调制脉冲在预定的平面上均匀化，每个同质化脉冲的部分用狭缝的图案掩蔽，以产生一系列流量控制脉冲的脉冲 图案化的子束，狭缝图案中的每个狭缝足够窄以防止在由对应于狭缝的子束照射的硅薄膜样品的区域中引起显着的成核，用能量控制狭缝的顺序照射非晶硅薄膜样品 图案化的子束以实现对应于每个注量控制的图案化子束脉冲的部分的熔化，并且可控地依次平移样品相对于狭缝图案化的子束的每个注量控制脉冲的相对位置。

公开(公告)号：US07029996B2

公开(公告)日：2006-04-18

申请号：US10294001

申请日：2002-11-13

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： H01L21/20

CPC分类号： B23K26/0622 ,  B23K26/0626 ,  B23K26/066 ,  G03F7/70041 ,  G03F7/70725 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04

摘要： Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed. In one preferred arrangement, a method includes the steps of generating a sequence of excimer laser pulses, controllably modulating each excimer laser pulse in the sequence to a predetermined fluence, homoginizing each modulated laser pulse in the sequence in a predetermined plane, masking portions of each homoginized fluence controlled laser pulse in the sequence with a two dimensional pattern of slits to generate a sequence of fluence controlled pulses of line patterned beamlets, each slit in the pattern of slits being sufficiently narrow to prevent inducement of significant nucleation in region of a silicon thin film sample irradiated by a beamlet corresponding to the slit, irradiating an amorphous silicon thin film sample with the sequence of fluence controlled slit patterned beamlets to effect melting of portions thereof corresponding to each fluence controlled patterned beamlet pulse in the sequence of pulses of patterned beamlets, and controllably sequentially translating a relative position of the sample with respect to each of the fluence controlled pulse of slit patterned beamlets to thereby process the amorphous silicon thin film sample into a single or polycrystalline silicon thin film.

摘要翻译： 公开了将非晶硅薄膜样品加工成多晶硅薄膜的方法。 在一个优选的布置中，一种方法包括以下步骤：产生准分子激光脉冲序列，可控制地将序列中的每个准分子激光脉冲调制成预定的注量，在预定的平面中使序列中的每个调制的激光脉冲均匀化， 均匀注入能量密度控制的激光脉冲具有二维图案的狭缝，以产生线图案化子束的注量控制脉冲序列，狭缝图案中的每个狭缝足够窄，以防止在硅薄层区域中引起显着成核 通过对应于狭缝的子束照射的薄膜样品，以可控流程控制的狭缝图案化子束的顺序照射非晶硅薄膜样品，以按照图案化子束的脉冲序列对应于每个注量控制的图案化子束脉冲的部分进行熔化， 并可控地顺序地翻译一个关系 相对于狭缝图案化子束的每个注量控制脉冲的样品的位置，从而将非晶硅薄膜样品处理成单个或多晶硅薄膜。

公开(公告)号：US06635554B1

公开(公告)日：2003-10-21

申请号：US09816265

申请日：2001-03-23

申请人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

发明人： James S. Im ,  Robert S. Sposili ,  Mark A. Crowder

IPC分类号： C30B2120

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026

摘要： System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed. The system includes an excimer laser for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator for controllably modulating fluence of the excimer laser pulses, a beam homoginizer for homoginizing modulated laser pulses in a predetermined plane, a mask for masking portions of the homoginized modulated laser pulses into patterned beamlets, a sample stage for receiving the patterned beamlets to effect melting of portions of any amorphous silicon thin film sample placed thereon corresponding to the beamlets, translating means for controllably translating a relative position of the sample stage with respect to a position of the mask and a computer for controlling the controllable fluence modulation of the excimer laser pulses and the controllable relative positions of the sample stage and mask, and for coordinating excimer pulse generation and fluence modulation with the relative positions of the sample stage and mask, to thereby process amorphous silicon thin film sample into a single or polycrystalline silicon thin film by sequential translation of the sample stage relative to the mask and irradiation of the sample by patterned beamlets of varying fluence at corresponding sequential locations thereon.

摘要翻译： 公开了将非晶硅薄膜样品加工成单个或多晶硅薄膜的系统和方法。 该系统包括用于产生预定能量密度的多个准分子激光脉冲的准分子激光器，用于可控地调制准分子激光脉冲的注量的能量密度调制器，用于在预定平面中均匀化调制的激光脉冲的光束均质器，用于掩蔽的掩模 将均质化的调制的激光脉冲的部分转换成图案化的子束，用于接收图案化的子束以实现对应于子束放置在其上的任何非晶硅薄膜样品的部分熔化的样品台，用于可控地平移样品台的相对位置的平移装置 相对于掩模的位置和用于控制准分子激光脉冲的可控注量调制和样品级和掩模的可控相对位置的计算机，并且用于将准分子脉冲产生和注量调制与样品的相对位置协调 舞台和面具，从而处理爱人 光硅薄膜样品通过样品台相对于掩模的顺序平移和通过在其上的相应顺序位置处具有变化的能量密度的图案化的子束照射样品而变成单个或多晶硅薄膜。