Funneled light pipe for pixel sensors
    1.
    发明授权
    Funneled light pipe for pixel sensors 有权
    用于像素传感器的漏斗式光管

    公开(公告)号:US07524694B2

    公开(公告)日:2009-04-28

    申请号:US11275171

    申请日:2005-12-16

    IPC分类号: G02B27/10

    摘要: A photo sensing structure and methods for forming the same. The structure includes (a) a semiconductor substrate and (b) a photo collection region on the semiconductor substrate. The structure also includes a funneled light pipe on top of the photo collection region. The funneled light pipe includes (i) a bottom cylindrical portion on top of the photo collection region of the photo collection region, and (ii) a funneled portion which has a tapered shape and is on top and in direct physical contact with the bottom cylindrical portion. The structure further includes a color filter region on top of the funneled light pipe.

    摘要翻译: 感光结构及其形成方法。 该结构包括(a)半导体衬底和(b)半导体衬底上的光收集区域。 该结构还包括在照片收集区域顶部的漏斗光管。 漏斗式光管包括(i)照片收集区域的照片收集区域顶部的底部圆柱形部分,和(ii)具有锥形形状并且在顶部并与底部圆柱体直接物理接触的漏斗部分 一部分。 该结构还包括在漏斗的光管的顶部上的滤色器区域。

    Image sensor, method and design structure including non-planar reflector
    3.
    发明授权
    Image sensor, method and design structure including non-planar reflector 失效
    图像传感器,方法和设计结构包括非平面反射器

    公开(公告)号:US08647913B2

    公开(公告)日:2014-02-11

    申请号:US13614210

    申请日:2012-09-13

    IPC分类号: H01L27/00

    摘要: A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.

    摘要翻译: 固态图像传感器,制造固态图像传感器的方法和用于制造固态图像传感器结构的设计结构包括依次包括感光区域的基板。 还包括在固态图像传感器内的非平面反射器层位于感光区域和基板的与感光区域和基板的入射辐射侧相对的一侧上。 非平面反射器层被成形和定位成将未捕获的入射辐射反射回光敏区域,同时避免与衬底内横向分离的附加光敏区域的光学串扰。

    IMAGE SENSOR, METHOD AND DESIGN STRUCTURE INCLUDING NON-PLANAR REFLECTOR
    4.
    发明申请
    IMAGE SENSOR, METHOD AND DESIGN STRUCTURE INCLUDING NON-PLANAR REFLECTOR 失效
    图像传感器,包括非平面反射器的方法和设计结构

    公开(公告)号:US20130001727A1

    公开(公告)日:2013-01-03

    申请号:US13614210

    申请日:2012-09-13

    IPC分类号: H01L31/0232 H01L31/18

    摘要: A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.

    摘要翻译: 固态图像传感器,制造固态图像传感器的方法和用于制造固态图像传感器结构的设计结构包括依次包括感光区域的基板。 还包括在固态图像传感器内的非平面反射器层位于感光区域和基板的与感光区域和基板的入射辐射侧相对的一侧上。 非平面反射器层被成形和定位成将未捕获的入射辐射反射回光敏区域,同时避免与衬底内横向分离的附加光敏区域的光学串扰。

    IMAGE SENSOR, METHOD AND DESIGN STRUCTURE INCLUDING NON-PLANAR REFLECTOR
    5.
    发明申请
    IMAGE SENSOR, METHOD AND DESIGN STRUCTURE INCLUDING NON-PLANAR REFLECTOR 有权
    图像传感器,包括非平面反射器的方法和设计结构

    公开(公告)号:US20110049330A1

    公开(公告)日:2011-03-03

    申请号:US12550640

    申请日:2009-08-31

    IPC分类号: H01L27/00

    摘要: A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.

    摘要翻译: 固态图像传感器,制造固态图像传感器的方法和用于制造固态图像传感器结构的设计结构包括依次包括感光区域的基板。 还包括在固态图像传感器内的非平面反射器层位于感光区域和基板的与感光区域和基板的入射辐射侧相对的一侧上。 非平面反射器层被成形和定位成将未捕获的入射辐射反射回光敏区域,同时避免与衬底内横向分离的附加光敏区域的光学串扰。

    Image sensor, method and design structure including non-planar reflector
    6.
    发明授权
    Image sensor, method and design structure including non-planar reflector 有权
    图像传感器,方法和设计结构包括非平面反射器

    公开(公告)号:US08299554B2

    公开(公告)日:2012-10-30

    申请号:US12550640

    申请日:2009-08-31

    IPC分类号: H01L27/00

    摘要: A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.

    摘要翻译: 固态图像传感器,制造固态图像传感器的方法和用于制造固态图像传感器结构的设计结构包括依次包括感光区域的基板。 还包括在固态图像传感器内的非平面反射器层位于感光区域和基板的与感光区域和基板的入射辐射侧相对的一侧上。 非平面反射器层被成形和定位成将未捕获的入射辐射反射回光敏区域,同时避免与衬底内横向分离的附加感光区域的光学串扰。

    CMOS sensors having charge pushing regions
    7.
    发明授权
    CMOS sensors having charge pushing regions 失效
    CMOS传感器具有电荷推送区域

    公开(公告)号:US07492048B2

    公开(公告)日:2009-02-17

    申请号:US11275497

    申请日:2006-01-10

    IPC分类号: H01L31/062

    摘要: Structures and method for forming the same. The semiconductor structure comprises a photo diode that includes a first semiconductor region and a second semiconductor region. The first and second semiconductor regions are doped with a first and second doping polarities, respectively, and the first and second doping polarities are opposite. The semiconductor structure also comprises a transfer gate that comprises (i) a first extension region, (ii) a second extension region, and (iii) a floating diffusion region. The first and second extension regions are in direct physical contact with the photo diode and the floating diffusion region, respectively. The semiconductor structure further comprises a charge pushing region. The charge pushing region overlaps the first semiconductor region and does not overlap the floating diffusion region. The charge pushing region comprises a transparent and electrically conducting material.

    摘要翻译: 结构及其形成方法。 该半导体结构包括包含第一半导体区域和第二半导体区域的光电二极管。 第一和第二半导体区域分别掺杂有第一和第二掺杂极性,并且第一和第二掺杂极性相反。 半导体结构还包括传输门,其包括(i)第一延伸区,(ii)第二延伸区和(iii)浮动扩散区。 第一和第二延伸区分别与光电二极管和浮动扩散区直接物理接触。 半导体结构还包括电荷推送区域。 电荷推送区域与第一半导体区域重叠,并且不与浮动扩散区域重叠。 电荷推送区域包括透明且导电的材料。

    PHOTOLITHOGRAPHY MASK WITH PROTECTIVE SILICIDE CAPPING LAYER
    8.
    发明申请
    PHOTOLITHOGRAPHY MASK WITH PROTECTIVE SILICIDE CAPPING LAYER 审中-公开
    具有保护性硅胶覆盖层的光刻胶面板

    公开(公告)号:US20080261121A1

    公开(公告)日:2008-10-23

    申请号:US11738004

    申请日:2007-04-20

    IPC分类号: G03C5/00 G03F1/00

    CPC分类号: G03F1/30 G03F1/48 G03F1/54

    摘要: A photomask and a method of fabricating the photomask. The photomask including: a substrate transparent to a selected wavelength or wavelengths of radiation, the substrate having a top surface and an opposite bottom surface, the substrate having a printable region and a non-printable region; the printable region having first opaque regions raised above the top surface of the substrate adjacent to clear regions, each opaque region of the first opaque regions having sidewalls and opposite top and bottom surfaces, the first opaque regions including a metal; the non-printable region including metal second opaque region raised above the top surface of the substrate, the second opaque region having sidewalls and opposite top and bottom surface, the second opaque regions including the metal; and a conformal protective metal oxide capping layer on top surfaces and sidewalls of the first and second opaque regions. The conformal layer is formed by oxidation.

    摘要翻译: 光掩模和制造光掩模的方法。 所述光掩模包括:对所选择的波长或辐射波长透明的衬底,所述衬底具有顶表面和相对的底表面,所述衬底具有可打印区域和不可打印区域; 所述可印刷区域具有在所述基板的与所述透明区域相邻的顶表面上方的第一不透明区域,所述第一不透明区域的每个不透明区域具有侧壁和相对的顶表面和底表面,所述第一不透明区域包括金属; 所述不可打印区域包括在所述基板的顶表面上方升高的金属第二不透明区域,所述第二不透明区域具有侧壁和相对的顶部和底部表面,所述第二不透明区域包括所述金属; 以及在第一和第二不透明区域的顶表面和侧壁上的共形保护性金属氧化物覆盖层。 保形层通过氧化形成。

    PHOTOLITHOGRAPHY MASK WITH INTEGRALLY FORMED PROTECTIVE CAPPING LAYER
    9.
    发明申请
    PHOTOLITHOGRAPHY MASK WITH INTEGRALLY FORMED PROTECTIVE CAPPING LAYER 审中-公开
    具有整体形成的保护层的光刻胶面板

    公开(公告)号:US20080261120A1

    公开(公告)日:2008-10-23

    申请号:US11737956

    申请日:2007-04-20

    IPC分类号: G03C5/00 G03F1/00

    CPC分类号: G03F1/30 G03F1/48 G03F1/54

    摘要: A photomask and a method of fabricating the photomask. The photomask including: a substrate transparent to a selected wavelength or wavelengths of radiation, the substrate having a top surface and an opposite bottom surface, the substrate having a printable region and a non-printable region; the printable region having first opaque regions raised above the top surface of the substrate adjacent to clear regions, each opaque region of the first opaque regions having sidewalls and opposite top and bottom surfaces, the first opaque regions including a metal; the non-printable region including metal second opaque region raised above the top surface of the substrate, the second opaque region having sidewalls and opposite top and bottom surface, the second opaque regions including the metal; and a conformal protective metal oxide capping layer on top surfaces and sidewalls of the first and second opaque regions. The conformal layer is formed by oxidation.

    摘要翻译: 光掩模和制造光掩模的方法。 所述光掩模包括:对所选择的波长或辐射波长透明的衬底,所述衬底具有顶表面和相对的底表面,所述衬底具有可打印区域和不可打印区域; 所述可印刷区域具有在所述基板的与所述透明区域相邻的顶表面上方的第一不透明区域,所述第一不透明区域的每个不透明区域具有侧壁和相对的顶表面和底表面,所述第一不透明区域包括金属; 所述不可打印区域包括在所述基板的顶表面上方升高的金属第二不透明区域,所述第二不透明区域具有侧壁和相对的顶部和底部表面,所述第二不透明区域包括所述金属; 以及在第一和第二不透明区域的顶表面和侧壁上的共形保护性金属氧化物覆盖层。 保形层通过氧化形成。

    PHOTOLITHOGRAPHY MASK WITH PROTECTIVE CAPPING LAYER
    10.
    发明申请
    PHOTOLITHOGRAPHY MASK WITH PROTECTIVE CAPPING LAYER 审中-公开
    具有保护层的光刻胶面

    公开(公告)号:US20080261122A1

    公开(公告)日:2008-10-23

    申请号:US11738070

    申请日:2007-04-20

    IPC分类号: G03C5/00 G03F1/00

    CPC分类号: G03F1/30 G03F1/48 G03F1/54

    摘要: A photomask and a method of fabricating the photomask. The photomask including: a substrate transparent to a selected wavelength or wavelengths of radiation, the substrate having a top surface and an opposite bottom surface, the substrate having a printable region and a non-printable region; the printable region having first opaque regions raised above the top surface of the substrate adjacent to clear regions, each opaque region of the first opaque regions having sidewalls and a top surface; the non-printable region comprising a second opaque region raised above the top surface of the substrate, the second opaque region having sidewalls and a top surface; and a capping layer on the sidewalls of the first opaque regions and the sidewalls of the second opaque region.

    摘要翻译: 光掩模和制造光掩模的方法。 所述光掩模包括:对所选择的波长或辐射波长透明的衬底,所述衬底具有顶表面和相对的底表面,所述衬底具有可打印区域和不可打印区域; 所述可印刷区域具有在所述基板的与所述透明区域相邻的顶表面上方的第一不透明区域,所述第一不透明区域的每个不透明区域具有侧壁和顶表面; 所述不可打印区域包括在所述基板的顶表面上方升高的第二不透明区域,所述第二不透明区域具有侧壁和顶表面; 以及在第一不透明区域的侧壁和第二不透明区域的侧壁上的覆盖层。