Particle-optical inspection device especially for semiconductor wafers
    2.
    发明授权
    Particle-optical inspection device especially for semiconductor wafers 有权
    粒子光学检测装置,特别适用于半导体晶圆

    公开(公告)号:US06693278B2

    公开(公告)日:2004-02-17

    申请号:US10024762

    申请日:2001-12-20

    IPC分类号: G01N2300

    摘要: In the production of semiconductors it is necessary to inspect circuit patterns on wafers. In circuits having very small details (for example, 40 nm), inspection can be carried out by means of electron beam columns, a plurality of wafers then being inspected at the same time and the signals being compared on-line. In an inspection apparatus in accordance with the invention more beam columns 1 to 7 are provided for every wafer A, B, C in order to obtain a high feed-through rate. The inspection is carried out by way of an x-y scan and the wafers are fed through according to a rectilinear movement, thus providing the possibility of scanning only the Care Area Fraction of the wafers, resulting in a high feed-through rate for the wafers in the inspection apparatus.

    摘要翻译: 在半导体的生产中,必须检查晶圆上的电路图案。 在具有非常小的细节的电路(例如,40nm)中,可以通过电子束柱进行检查,然后同时检查多个晶片,并且在线比较信号。 在根据本发明的检查装置中,为了获得高的馈通速率,为每个晶片A,B,C提供了更多的光束列1至7。 检查通过xy扫描进行,并且晶片根据直线运动进给,从而提供仅扫描晶片的护理部分级别的可能性,导致晶片的高馈送速率 检查装置。

    Multi-beam lithography apparatus with mutually different beam limiting apertures
    3.
    发明授权
    Multi-beam lithography apparatus with mutually different beam limiting apertures 有权
    具有相互不同的光束限制孔径的多光束光刻设备

    公开(公告)号:US06593584B2

    公开(公告)日:2003-07-15

    申请号:US09745940

    申请日:2000-12-22

    IPC分类号: H01J37073

    摘要: Multi-beam lithography apparatus is used for writing patterns on a substrate 14 such as a wafer for ICs. The patterns may have details of various dimensions. In order to enhance the production rate, it is attractive to write fine details with a small spot 16 and large details with a large spot. It is known to vary the spot size by varying the emissive surface of the electron source. In accordance with the invention the spot size is varied by varying the size 22 of the beam limiting aperture 20, thus enabling optimization of the beam current in dependence on the spot size. A preferred embodiment is provided with an additional (condenser) lens 24 such that the object distance remains constant when the magnification of the lens system 18, 24 is varied.

    摘要翻译: 多光束光刻设备用于在诸如用于IC的晶片的衬底14上书写图案。 图案可以具有各种尺寸的细节。 为了提高生产率,有吸引力的是用一个小点16和大的细节写大细节的细节。 已知通过改变电子源的发射表面来改变光斑尺寸。 根据本发明,通过改变光束限制孔径20的尺寸22来改变光点尺寸,从而能够根据光斑尺寸优化光束电流。 优选实施例设置有附加(聚光镜)透镜24,使得当透镜系统18,24的倍率变化时物体距离保持恒定。

    SEM provided with a secondary electron detector having a central electrode

    公开(公告)号:US06646261B2

    公开(公告)日:2003-11-11

    申请号:US10024777

    申请日:2001-12-20

    申请人: Jan Martijn Krans

    发明人: Jan Martijn Krans

    IPC分类号: H01J3728

    摘要: The invention relates to wafer inspection by means of a scanning electron microscope (SEM) column in which the secondary electron detector 22, 24 is positioned centrally above the objective lens of the column. Secondary electrons that leave the central part of the specimen in a direction substantially perpendicular to its surface are inevitably collected in the central part of the detector surface where the bore 36 for the primary beam 6 is situated. Consequently, such electrons do not contribute to the detector signal. In order to avoid such a detrimental loss of signal contribution, it is proposed to provide a central electrode 35 in the central bore 36 such that secondary electrons that approach the bore are driven aside towards the electron-sensitive detector region 48.