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    Electron projection lithography apparatus using secondary electrons
    2.
    发明授权
    Electron projection lithography apparatus using secondary electrons 失效

    公开(公告)号：US06784438B2

    公开(公告)日：2004-08-31

    申请号：US10688953

    申请日：2003-10-21

    申请人： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

    发明人： In-kyeong Yoo ,  Chang-wook Moon ,  Dong-wook Kim

    IPC分类号： H01J37073

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3175 ,  H01J2237/06358 ,  H01J2237/31781

    摘要： An electron projection lithography apparatus using secondary electrons includes a secondary electron emitter which is spaced apart from a substrate holder by a first predetermined interval and has a patterned mask formed on a surface thereof to face the substrate holder, a primary electron emitter which is spaced apart by a second predetermined interval from the secondary electron emitter in a direction opposite to the substrate holder and emits primary electrons to the secondary electron emitter, a second power supply which applies a second predetermined voltage between the substrate holder and the secondary electron emitter, a first power supply which applies a first predetermined voltage between the secondary electron emitter and the primary electron emitter, and a magnetic field generator which controls a path of secondary electrons emitted from the secondary electron emitter.

    Point source for producing electrons beams
    3.
    发明授权
    Point source for producing electrons beams 失效
    产生电子束的点源

    公开(公告)号：US06700127B2

    公开(公告)日：2004-03-02

    申请号：US10042795

    申请日：2002-01-09

    申请人： Conrad W. Schneiker ,  Stuart Hameroff ,  Robert W. Gray

    发明人： Conrad W. Schneiker ,  Stuart Hameroff ,  Robert W. Gray

    IPC分类号： H01J37073

    CPC分类号： B82Y10/00 ,  H01J3/022 ,  H01J37/073 ,  H01J2201/30469 ,  Y10S977/881

    摘要： An apparatus for producing an electron beam, containing a vacuum chamber, a source of electron beams within the vacuum chamber, and a device for focusing the electrons beams. An electron transparent window is formed at the end of the vacuum chamber; and the vacuum chamber has a volume of less than about 1 cubic millimeter and a pressure of less than 10−7 Torr. In one embodiment, the focusing device is located outside of the vacuum chamber.

    摘要翻译： 一种用于制造电子束的装置，包括真空室，真空室内的电子束源和用于聚焦电子束的装置。 在真空室的末端形成电子透明窗; 并且真空室具有小于约1立方毫米的体积和小于10 -7乇的压力。 在一个实施例中，聚焦装置位于真空室外部。

    Multi-beam lithography apparatus with mutually different beam limiting apertures
    5.
    发明授权
    Multi-beam lithography apparatus with mutually different beam limiting apertures 有权
    具有相互不同的光束限制孔径的多光束光刻设备

    公开(公告)号：US06593584B2

    公开(公告)日：2003-07-15

    申请号：US09745940

    申请日：2000-12-22

    申请人： Jan Martijn Krans ,  Peter Christiaan Tiemeijer

    发明人： Jan Martijn Krans ,  Peter Christiaan Tiemeijer

    IPC分类号： H01J37073

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/06316 ,  H01J2237/0635

    摘要： Multi-beam lithography apparatus is used for writing patterns on a substrate 14 such as a wafer for ICs. The patterns may have details of various dimensions. In order to enhance the production rate, it is attractive to write fine details with a small spot 16 and large details with a large spot. It is known to vary the spot size by varying the emissive surface of the electron source. In accordance with the invention the spot size is varied by varying the size 22 of the beam limiting aperture 20, thus enabling optimization of the beam current in dependence on the spot size. A preferred embodiment is provided with an additional (condenser) lens 24 such that the object distance remains constant when the magnification of the lens system 18, 24 is varied.

    摘要翻译： 多光束光刻设备用于在诸如用于IC的晶片的衬底14上书写图案。 图案可以具有各种尺寸的细节。 为了提高生产率，有吸引力的是用一个小点16和大的细节写大细节的细节。 已知通过改变电子源的发射表面来改变光斑尺寸。 根据本发明，通过改变光束限制孔径20的尺寸22来改变光点尺寸，从而能够根据光斑尺寸优化光束电流。 优选实施例设置有附加（聚光镜）透镜24，使得当透镜系统18,24的倍率变化时物体距离保持恒定。

    Measurement of film thickness by inelastic electron scattering
    6.
    发明授权
    Measurement of film thickness by inelastic electron scattering 有权
    通过非弹性电子散射测量膜厚度

    公开(公告)号：US06399944B1

    公开(公告)日：2002-06-04

    申请号：US09350701

    申请日：1999-07-09

    申请人： Leonid A. Vasilyev ,  Charles E. Bryson, III ,  Robert Linder ,  Sergey Borodyansky ,  Dmitri Klyachko

    发明人： Leonid A. Vasilyev ,  Charles E. Bryson, III ,  Robert Linder ,  Sergey Borodyansky ,  Dmitri Klyachko

    IPC分类号： H01J37073

    CPC分类号： G01B15/02

    摘要： A method and apparatus for measuring the thickness of a thin coating, having a thickness on the order of 1 to 10 nm, of one material formed over a substrate of another material of significantly different atomic number, for example, a carbon coating on a ferromagnetic substrate. A primary radiation source, for example, of electrons or X-ray, creates low-energy secondary electrons in the substrate. The intensity of inelastically scattered electrons generally increases with film thickness. The secondary electron spectrum measured for a test sample is compared with the spectra for a plurality of similar reference samples of the same set of compositions, and a test thickness is thereby determined. The method may be practice on conventional electron spectrometers with the addition of some programmed analysis. Various techniques are available for extracting the data and comparing the test and reference data.

    摘要翻译： 用于测量厚度在1至10nm数量级的薄涂层的厚度的方法和装置，其形成在具有显着不同原子序数的另一材料的基底上形成的一种材料，例如在铁磁性材料上的碳涂层 基质。 主要的辐射源，例如电子或X射线，在衬底中产生低能二次电子。 非弹性散射的电子的强度通常随膜厚增加。 将测试样品测量的二次电子光谱与同一组合物组合的多个相似参考样品的光谱进行比较，由此确定测试厚度。 该方法可以在常规电子分光计上进行实践，并加上一些程序化分析。 各种技术可用于提取数据并比较测试和参考数据。