ROLL-TO-ROLL PRINTING APPARATUSES
    2.
    发明申请
    ROLL-TO-ROLL PRINTING APPARATUSES 有权
    滚动滚筒印刷设备

    公开(公告)号:US20100224087A1

    公开(公告)日:2010-09-09

    申请号:US12691611

    申请日:2010-01-21

    IPC分类号: B41L13/04

    摘要: Roll-to-roll printing apparatuses are disclosed. The roll-to-roll printing apparatus includes a printing device with a squeegee moving along a first direction transferring a pattern of a stencil to a roll of working pieces. A sending roller and a receiving roller are disposed on both sides of the printing device. The roll of working pieces is rolled along a second direction to a printing stage of the printing device. An alignment device is disposed corresponding to a position of the stencil and the roll of working pieces. A drying device is disposed on one side of the printing device and may be on the same side with the receiving roller, wherein the drying device cures the patterns on the roll of working pieces.

    摘要翻译: 公开了卷对卷印刷装置。 该卷对卷印刷装置包括一印刷装置,该印刷装置具有沿第一方向移动的刮板,该第一方向将模板的图案转印到一卷工件上。 发送辊和接收辊设置在打印装置的两侧。 工作辊卷沿着第二方向卷绕到印刷装置的印刷台上。 对准装置对应于模板和工作辊的位置。 干燥装置设置在打印装置的一侧上,并且可以与接收辊在同一侧,其中干燥装置固化工件卷上的图案。

    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same
    3.
    发明申请
    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效
    三极管CNT-FED的共面栅极阴极的结构及其制造方法

    公开(公告)号:US20060258252A1

    公开(公告)日:2006-11-16

    申请号:US11490179

    申请日:2006-07-21

    IPC分类号: B05D3/00 H01J9/24

    摘要: The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

    摘要翻译: 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法,通过印刷光刻和喷墨。 该结构包括基板,多个阴极层,多个栅极延伸层,塑料电介质层,多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的,其通过印记平版印刷在基板上形成,以及通过印刷光刻制造的多个电介质开口。 此外,通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极,以具有共面的栅极 - 阴极。

    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same
    4.
    发明授权
    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效
    三极管CNT-FED的共面栅极阴极的结构及其制造方法

    公开(公告)号:US07154214B2

    公开(公告)日:2006-12-26

    申请号:US10863279

    申请日:2004-06-09

    IPC分类号: H01J1/14

    摘要: A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

    摘要翻译: 三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法,通过印刷光刻和喷墨。 该结构包括基板,多个阴极层,多个栅极延伸层,塑料电介质层,多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的,并且通过印刷平版印刷法在基板上形成,并且通过印刷光刻制造多个电介质开口。 通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极,以具有共面的栅极 - 阴极。

    Roll-to-roll printing apparatuses
    5.
    发明授权
    Roll-to-roll printing apparatuses 有权
    卷对卷印刷设备

    公开(公告)号:US08333147B2

    公开(公告)日:2012-12-18

    申请号:US12691611

    申请日:2010-01-21

    IPC分类号: B05C17/06

    摘要: Roll-to-roll printing apparatuses are disclosed. The roll-to-roll printing apparatus includes a printing device with a squeegee moving along a first direction transferring a pattern of a stencil to a roll of working pieces. A sending roller and a receiving roller are disposed on both sides of the printing device. The roll of working pieces is rolled along a second direction to a printing stage of the printing device. An alignment device is disposed corresponding to a position of the stencil and the roll of working pieces. A drying device is disposed on one side of the printing device and may be on the same side with the receiving roller, wherein the drying device cures the patterns on the roll of working pieces.

    摘要翻译: 公开了卷对卷印刷装置。 该卷对卷印刷装置包括一印刷装置,该印刷装置具有沿第一方向移动的刮板,该第一方向将模板的图案转印到一卷工件上。 发送辊和接收辊设置在打印装置的两侧。 工作辊卷沿着第二方向卷绕到印刷装置的印刷台上。 对准装置对应于模板和工作辊的位置。 干燥装置设置在打印装置的一侧上,并且可以与接收辊在同一侧,其中干燥装置固化工件卷上的图案。

    Triode CNT-FED structure gate runner and cathode manufactured method
    6.
    发明申请
    Triode CNT-FED structure gate runner and cathode manufactured method 失效
    三极管CNT-FED结构闸流道和阴极制造方法

    公开(公告)号:US20050253501A1

    公开(公告)日:2005-11-17

    申请号:US10863279

    申请日:2004-06-09

    摘要: The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

    摘要翻译: 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法,通过印刷光刻和喷墨。 该结构包括基板,多个阴极层,多个栅极延伸层,塑料电介质层,多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的,其通过印记平版印刷在基板上形成,以及通过印刷光刻制造的多个电介质开口。 此外,通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极,以具有共面的栅极 - 阴极。

    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same
    7.
    发明授权
    Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效
    三极管CNT-FED的共面栅极阴极的结构及其制造方法

    公开(公告)号:US07322869B2

    公开(公告)日:2008-01-29

    申请号:US11490179

    申请日:2006-07-21

    IPC分类号: H01J9/24 H01J1/62

    摘要: A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

    摘要翻译: 三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法,通过印刷光刻和喷墨。 该结构包括基板,多个阴极层,多个栅极延伸层,塑料电介质层,多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的,并且通过印刷平版印刷法在基板上形成,并且通过印刷光刻制造多个电介质开口。 通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极,以具有共面的栅极 - 阴极。

    Field emission display panels incorporating cathodes having narrow nanotube emitters formed on dielectric layers
    9.
    发明授权
    Field emission display panels incorporating cathodes having narrow nanotube emitters formed on dielectric layers 失效
    场致发射显示面板包括形成在电介质层上的具有窄纳米管发射体的阴极

    公开(公告)号:US06750604B2

    公开(公告)日:2004-06-15

    申请号:US09864013

    申请日:2001-05-23

    IPC分类号: H01J102

    摘要: A field emission display panel device that incorporates carbon nanotube emitter layers for emitting electrons wherein the carbon nanotube layers has a smaller width than the conductive paste layers it is deposited on is disclosed. The width of the carbon nanotube layer should be less than ¾ of the width of the conductive paste layer, or in a range between about ¼ and ¾ of the width of the conductive paste layer, i.e. such as a silver paste layer. The present invention novel structure prevents the overflow of the carbon nanotubes, after a curing process for the nanotubes is conducted, onto the sidewall of the conductive paste layer, and thus significantly improves the electron density projected toward the flourescent powder coating layer to produce an image with reduced electron scattering. As a result, image clarity, definition and contrast can be improved in the FED device.

    摘要翻译: 公开了一种场致发射显示面板装置,其包括用于发射电子的碳纳米管发射极层,其中碳纳米管层具有比其沉积的导电浆料层小的宽度。 碳纳米管层的宽度应小于导电膏层的宽度的3/4,或者在导电浆料层的宽度的大约1/4和¾之间的范围内,即银膏层。 本发明的新颖结构防止了碳纳米管在纳米管的固化过程进行之后在导电浆料层的侧壁上溢出,从而显着提高了向荧光粉末涂层投射的电子密度,从而产生图像 具有减少的电子散射。 因此,可以在FED设备中改善图像清晰度,清晰度和对比度。

    HYBRID DISPLAY DEVICE
    10.
    发明申请
    HYBRID DISPLAY DEVICE 审中-公开
    混合显示设备

    公开(公告)号:US20130087815A1

    公开(公告)日:2013-04-11

    申请号:US13482982

    申请日:2012-05-29

    IPC分类号: H01L27/15

    摘要: The disclosure provides a hybrid display device, comprising: a substrate, wherein the substrate comprises a first surface and a second surface; a TFT array layer formed on the first surface of the substrate; a first display device formed on the TFT array layer; and a second display device formed on the second surface of the substrate, wherein there exists a corresponding relationship between a dielectric constant (k) of the substrate and a thickness (t) of the substrate to drive at least one of the first display device and the second display device, or to drive both of the first display device and the second display device by the TFT array layer, especially the TFT array layer actively drive the first display device, the second display device or combinations thereof. The dielectric constant of the substrate is about 1-100 and the thickness of the substrate is about 0.1-60 μm.

    摘要翻译: 本公开提供了一种混合显示装置,包括:基板,其中所述基板包括第一表面和第二表面; 形成在所述基板的第一表面上的TFT阵列层; 形成在TFT阵列层上的第一显示装置; 以及形成在所述基板的第二表面上的第二显示装置,其中,所述基板的介电常数(k)与所述基板的厚度(t)之间存在对应关系,以驱动所述第一显示装置和 第二显示装置,或者通过TFT阵列层驱动第一显示装置和第二显示装置,特别是TFT阵列层主动驱动第一显示装置,第二显示装置或其组合。 基板的介电常数约为1-100,基板的厚度约为0.1-60μm。