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公开(公告)号：US07594841B2
公开(公告)日：2009-09-29
申请号：US10857912
申请日：2004-06-02
CPC分类号： B82Y10/00 , H01J1/3042 , H01J9/025 , H01J2201/30469
摘要： A method for fabricating a carbon nanotube field emitter array is disclosed, which has the steps of (a) providing a substrate; (b) forming a cathode layer having a first pattern on the substrate; (c) forming an opaque insulating layer having a second pattern on the substrate, wherein a predetermined part of the cathode layer is exposed; (d) forming a gate layer having the second pattern on the opaque insulating layer; (e) forming a carbon nanotube layer on the entire top surface of the substrate; and (f) exposing the carbon nanotube layer to a light beam coming from the backside of the substrate.
摘要翻译： 公开了一种用于制造碳纳米管场发射极阵列的方法，其具有以下步骤：（a）提供衬底; （b）在基板上形成具有第一图案的阴极层; （c）在所述基板上形成具有第二图案的不透明绝缘层，其中暴露所述阴极层的预定部分; （d）在不透明绝缘层上形成具有第二图案的栅极层; （e）在所述基板的整个顶表面上形成碳纳米管层; 和（f）将碳纳米管层暴露于来自衬底背面的光束。
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公开(公告)号：US07413763B2
公开(公告)日：2008-08-19
申请号：US10706907
申请日：2003-11-14
IPC分类号： B05D5/12
CPC分类号： B82Y10/00 , H01J9/025 , H01J31/127 , H01J2201/30469
摘要： A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.
摘要翻译： 公开了一种传送压印碳纳米管（CNT）场发射源的方法。 首先，将阴极线丝网印刷在基板上。 然后在阴极线和衬底上形成介电层。 之后，进行通过丝网印刷在电介质层上形成的栅极线。 接下来，进行图案化处理以形成开口。 随后，用CNT浆料浸渍压印阴模，并通过开口将CNT浆料印在阴极线上。 从压印模具中抽出图案后，通过退火使CNT浆料固化。 由于通过印模阴模形成发光源，结果，可以预先确定尺寸和形状。 此外，栅极线和发光源之间的间隔容易控制，这解决了栅极和阴极之间的电路短路问题。 因此，发射源的电流密度，亮度和均匀性显着提高。
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3.发明授权Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效三极管CNT-FED的共面栅极阴极的结构及其制造方法公开(公告)号：US07154214B2
公开(公告)日：2006-12-26
申请号：US10863279
申请日：2004-06-09
IPC分类号： H01J1/14
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译： 三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，并且通过印刷平版印刷法在基板上形成，并且通过印刷光刻制造多个电介质开口。 通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。
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4.发明授权Organic integrated device for thin film transistor and light emitting diode and process for fabricating the same 有权薄膜晶体管和发光二极管的有机集成器件及其制造方法公开(公告)号：US06924503B2
公开(公告)日：2005-08-02
申请号：US10340710
申请日：2003-01-13
IPC分类号： H05B33/10 , G09F9/30 , H01L27/15 , H01L27/28 , H01L27/32 , H01L29/786 , H01L35/24 , H01L51/00 , H01L51/05 , H01L51/50 , H01L51/56 , H05B33/14 , H05B33/26
CPC分类号： H01L27/3274 , H01L51/0541
摘要： An organic integrated device for thin film transistor and light emitting diode. The organic integrated device of the present invention includes a top-gate organic thin film transistor (top-gate OTFT) and an organic light emitting diode (OLED), both formed on the same substrate. In the organic integrated device, some layers can be commonly used by both OTFT and OLED, and some layers can be made of the same material and formed in the same course, which simplifies the entire process.
摘要翻译： 一种用于薄膜晶体管和发光二极管的有机集成器件。 本发明的有机集成器件包括形成在同一衬底上的顶栅有机薄膜晶体管（顶栅OTFT）和有机发光二极管（OLED）。 在有机集成器件中，OTFT和OLED都可以通常使用一些层，一些层可以由相同的材料制成，并且在相同的过程中形成，这简化了整个过程。
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公开(公告)号：US20050067937A1
公开(公告)日：2005-03-31
申请号：US10857912
申请日：2004-06-02
CPC分类号： B82Y10/00 , H01J1/3042 , H01J9/025 , H01J2201/30469
摘要： A method for fabricating a carbon nanotube field emitter array is disclosed, which has the steps of (a) providing a substrate; (b) forming a cathode layer having a first pattern on the substrate; (c) forming an opaque insulating layer having a second pattern on the substrate, wherein a predetermined part of the cathode layer is exposed; (d) forming a gate layer having the second pattern on the opaque insulating layer; (e) forming a carbon nanotube layer on the entire top surface of the substrate; and (f) exposing the carbon nanotube layer to a light beam coming from the backside of the substrate.
摘要翻译： 公开了一种用于制造碳纳米管场发射极阵列的方法，其具有以下步骤：（a）提供衬底; （b）在基板上形成具有第一图案的阴极层; （c）在所述基板上形成具有第二图案的不透明绝缘层，其中暴露所述阴极层的预定部分; （d）在不透明绝缘层上形成具有第二图案的栅极层; （e）在所述基板的整个顶表面上形成碳纳米管层; 和（f）将碳纳米管层暴露于来自衬底背面的光束。
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6.发明申请Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效三极管CNT-FED的共面栅极阴极的结构及其制造方法公开(公告)号：US20060258252A1
公开(公告)日：2006-11-16
申请号：US11490179
申请日：2006-07-21
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译： 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，其通过印记平版印刷在基板上形成，以及通过印刷光刻制造的多个电介质开口。 此外，通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。
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7.发明申请公开(公告)号：US20050253501A1
公开(公告)日：2005-11-17
申请号：US10863279
申请日：2004-06-09
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译： 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，其通过印记平版印刷在基板上形成，以及通过印刷光刻制造的多个电介质开口。 此外，通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。
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8.发明授权Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效三极管CNT-FED的共面栅极阴极的结构及其制造方法公开(公告)号：US07322869B2
公开(公告)日：2008-01-29
申请号：US11490179
申请日：2006-07-21
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译： 三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，并且通过印刷平版印刷法在基板上形成，并且通过印刷光刻制造多个电介质开口。 通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。
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公开(公告)号：US20050062195A1
公开(公告)日：2005-03-24
申请号：US10706907
申请日：2003-11-14
CPC分类号： B82Y10/00 , H01J9/025 , H01J31/127 , H01J2201/30469
摘要： A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.
摘要翻译： 公开了一种传送压印碳纳米管（CNT）场发射源的方法。 首先，将阴极线丝网印刷在基板上。 然后在阴极线和衬底上形成介电层。 之后，进行通过丝网印刷在电介质层上形成的栅极线。 接下来，进行图案化处理以形成开口。 随后，用CNT浆料浸渍压印阴模，并通过开口将CNT浆料印在阴极线上。 从压印模具中抽出图案后，通过退火使CNT浆料固化。 由于通过印模阴模形成发光源，结果，可以预先确定尺寸和形状。 此外，栅极线和发光源之间的间隔容易控制，这解决了栅极和阴极之间的电路短路问题。 因此，发射源的电流密度，亮度和均匀性显着提高。
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10.发明授权Method of growing isomeric carbon emitters onto triode structure of field emission display 失效将异构碳发射体生长到场致发射显示三极管结构上的方法公开(公告)号：US06769945B2
公开(公告)日：2004-08-03
申请号：US10228343
申请日：2002-08-24
IPC分类号： H01J902
CPC分类号： B82Y10/00 , H01J9/025 , H01J9/185 , H01J2201/30469
摘要： A triode structure of a field emission display is manufactured with thick-film technology. The triode structure includes a cathode electrode layer that comprises a metallic catalyst. Isomeric carbon emitters can be grown on the cathode electrode layer by CVD process at a low temperature because of the metallic catalyst. Instead of mixing the metallic catalyst in the cathode electrode layer, a metallic catalyst layer can be formed on the cathode electrode layer to facilitate the growth of the isomeric carbon emitters. The combination of thick film technology and low temperature CVD process provide a low cost method for fabricating a large area field emission display with isomeric carbon emitters.
摘要翻译： 利用厚膜技术制造场致发射显示器的三极管结构。 三极管结构包括包含金属催化剂的阴极电极层。 由于金属催化剂，异氰酸碳发生器可以通过CVD工艺在低温下在阴极电极层上生长。 代替在阴极电极层中混合金属催化剂，可以在阴极电极层上形成金属催化剂层，以促进异构碳发射体的生长。 厚膜技术和低温CVD工艺的组合提供了用于制造具有异构碳排放器的大面积场致发射显示器的低成本方法。
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