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1.发明授权Cathode plate of a carbon nano tube field emission display and its fabrication method 失效碳纳米管场发射显示器的阴极板及其制造方法公开(公告)号：US06811457B2
公开(公告)日：2004-11-02
申请号：US10072965
申请日：2002-02-09
申请人： Hua-Chi Cheng , Cheng-Chung Lee , Jane-Hway Liao , Yu-Yang Chang , Jyh-Rong Sheu , Jia-Chong Ho
发明人： Hua-Chi Cheng , Cheng-Chung Lee , Jane-Hway Liao , Yu-Yang Chang , Jyh-Rong Sheu , Jia-Chong Ho
IPC分类号： H01J902
CPC分类号： B82Y10/00 , H01J9/025 , H01J2201/30469 , H01J2329/00 , Y10S977/742 , Y10S977/856
摘要： A method for fabricating the cathode plate of a carbon nano tube field emission display uses a photosensitive paste and etchable dielectric material to fabricate the cathode plate. The method combines photolithography process and etching process to fabricate a cathode electrode layer, a dielectric layer, a gate layer, and a carbon nano tube emission layer. Packing this cathode plate structure with a conventional anode plate together can form a carbon nano tube field emission array. The distribution of the electric field is uniform and the alignment at post-process is made easy.
摘要翻译： 用于制造碳纳米管场发射显示器的阴极板的方法使用感光浆料和可刻蚀介电材料来制造阴极板。 该方法结合光刻工艺和蚀刻工艺来制造阴极电极层，电介质层，栅极层和碳纳米管发射层。 将这种阴极板结构与常规阳极板一起包装可以形成碳纳米管场发射阵列。 电场分布均匀，后处理对准容易。
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公开(公告)号：US06705910B2
公开(公告)日：2004-03-16
申请号：US10067315
申请日：2002-02-07
申请人： Jyh-Rong Sheu , Jia-Chong Ho , Yu-Yang Chang , Hua-Chi Cheng , Cheng-Chung Lee
发明人： Jyh-Rong Sheu , Jia-Chong Ho , Yu-Yang Chang , Hua-Chi Cheng , Cheng-Chung Lee
IPC分类号： H01J902
CPC分类号： B82Y10/00 , C25D13/00 , H01J3/021 , H01J9/025 , H01J2201/30469
摘要： A manufacturing method for an electron-emitting source of triode structure, including forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a hydrophilic layer in the opening, forming a hydrophobic layer on the gate layer and the surrounding region, wherein the hydrophobic layer contacts the ends of the hydrophilic layer, dispersing a carbon nanotube solution on the hydrophilic layer using ink jet printing, executing a thermal process step, and removing the hydrophobic layer. According to this method, carbon nanotubes are deposited over a large area in the gate hole.
摘要翻译： 一种用于三极管结构的电子发射源的制造方法，包括在衬底上形成阴极层，在阴极层上形成电介质层，并在电介质层中定位开口以露出阴极层，其中开口具有 在所述电介质层上形成除了所述周围区域之外的栅极层，在所述开口中形成亲水层，在所述栅极层和所述周围区域形成疏水层，其中所述疏水层与所述亲水层的端部接触 使用喷墨印刷将碳纳米管溶液分散在亲水层上，执行热处理步骤，并除去疏水层。 根据该方法，碳纳米管沉积在栅极孔中的大面积上。
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3.发明申请Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效三极管CNT-FED的共面栅极阴极的结构及其制造方法公开(公告)号：US20060258252A1
公开(公告)日：2006-11-16
申请号：US11490179
申请日：2006-07-21
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译： 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，其通过印记平版印刷在基板上形成，以及通过印刷光刻制造的多个电介质开口。 此外，通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。
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4.发明申请公开(公告)号：US20050253501A1
公开(公告)日：2005-11-17
申请号：US10863279
申请日：2004-06-09
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译： 本发明提供三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，其通过印记平版印刷在基板上形成，以及通过印刷光刻制造的多个电介质开口。 此外，通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。
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5.发明授权Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效三极管CNT-FED的共面栅极阴极的结构及其制造方法公开(公告)号：US07154214B2
公开(公告)日：2006-12-26
申请号：US10863279
申请日：2004-06-09
IPC分类号： H01J1/14
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译： 三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，并且通过印刷平版印刷法在基板上形成，并且通过印刷光刻制造多个电介质开口。 通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。
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6.发明授权Structure of a coplanar gate-cathode of a triode CNT-FED and method of manufacturing same 失效三极管CNT-FED的共面栅极阴极的结构及其制造方法公开(公告)号：US07322869B2
公开(公告)日：2008-01-29
申请号：US11490179
申请日：2006-07-21
CPC分类号： H01J9/025 , B82Y10/00 , H01J1/304 , H01J2201/30469
摘要： A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.
摘要翻译： 三极管CNT-FED的共面栅极 - 阴极的结构及其制造方法，通过印刷光刻和喷墨。 该结构包括基板，多个阴极层，多个栅极延伸层，塑料电介质层，多个电介质开口和多个栅电极。 多个阴极层和多个栅极延伸层是共面的，并且通过印刷平版印刷法在基板上形成，并且通过印刷光刻制造多个电介质开口。 通过喷墨或丝网印刷制造的栅电极可以通过塑料电介质层延伸到栅极延伸电极，以具有共面的栅极 - 阴极。
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公开(公告)号：US07161289B2
公开(公告)日：2007-01-09
申请号：US10436796
申请日：2003-05-13
申请人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
发明人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
IPC分类号： H01J63/04
摘要： A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
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公开(公告)号：US07662428B2
公开(公告)日：2010-02-16
申请号：US10653990
申请日：2003-09-04
申请人： Jyh-Rong Sheu , Chun-Tao Lee , Cheng-Chung Lee , Jia-Chong Ho , Yu-Yang Chang
发明人： Jyh-Rong Sheu , Chun-Tao Lee , Cheng-Chung Lee , Jia-Chong Ho , Yu-Yang Chang
IPC分类号： B05D5/12
CPC分类号： B82Y30/00 , B82Y10/00 , H01J1/304 , H01J9/025 , H01J2201/30469
摘要： A method for increasing the number of carbon nanotubes exposed on the triode structure device of a field emission display uses the technology of casting surface treatment. For advancing the current density and magnitude of CNT emitters, the method of casting surface treatment on the CNT emitters includes the steps of coating an adhesive material on the surface of the device; heating the adhesive material for adhibitting the surface; and lifting the adhesive material off the surface.
摘要翻译： 用于增加在场致发射显示器的三极管结构器件上暴露的碳纳米管的数量的方法使用铸造表面处理技术。 为了提高CNT发射体的电流密度和幅度，在CNT发射体上进行表面处理的方法包括在器件表面上涂覆粘合剂材料的步骤; 加热用于粘合表面的粘合剂材料; 并将粘合剂材料从表面上提起。
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9.发明授权公开(公告)号：US07156715B2
公开(公告)日：2007-01-02
申请号：US11109173
申请日：2005-04-19
申请人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
发明人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
IPC分类号： H01J9/12
摘要： A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
摘要翻译： 场致发射显示器的三极管结构及其制造方法。 布置在矩阵中的多个阴极层形成在电介质层的上方。 排列成矩阵状的多个发光层分别形成在阴极层的上方。 在电介质层上形成多个纵向延伸的栅极线，其中每个栅极层设置在两个相邻的阴极层之间。
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10.发明申请公开(公告)号：US20050197032A1
公开(公告)日：2005-09-08
申请号：US11109173
申请日：2005-04-19
申请人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
发明人： Chun-Tao Lee , Cheng-Chung Lee , Jyh-Rong Sheu , Yu-Yang Chang , Jia-Chong Ho , Yu-Wu Wang
摘要： A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.
摘要翻译： 场致发射显示器的三极管结构及其制造方法。 布置在矩阵中的多个阴极层形成在电介质层的上方。 排列成矩阵状的多个发光层分别形成在阴极层的上方。 在电介质层上形成多个纵向延伸的栅极线，其中每个栅极层设置在两个相邻的阴极层之间。
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