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    Process and apparatus for producing a silicon single crystal
    1.
    发明授权
    Process and apparatus for producing a silicon single crystal 有权
    用于制造硅单晶的方法和设备

    公开(公告)号：US07771530B2

    公开(公告)日：2010-08-10

    申请号：US10053446

    申请日：2002-01-17

    申请人： Janis Virbulis ,  Wilfried Von Ammon ,  Erich Tomzig ,  Yuri Gelfgat ,  Lenoid Gorbunov

    发明人： Janis Virbulis ,  Wilfried Von Ammon ,  Erich Tomzig ,  Yuri Gelfgat ,  Lenoid Gorbunov

    IPC分类号： C30B15/00

    CPC分类号： C30B29/06 ,  C30B15/305

    摘要： A process for producing a silicon single crystal is by pulling the single crystal from a silicon melt which is contained in a crucible with a diameter of at least 450 mm, above which a heat shield is arranged. The single crystal being pulled has a diameter of at least 200 mm. The silicon melt is exposed to the influence of a traveling magnetic field which exerts a substantially vertically oriented force on the melt in the region of the crucible wall. There is also an apparatus which is suitable for carrying out the process.

    摘要翻译： 制造硅单晶的方法是通过从容纳在直径至少为450mm的坩埚中的硅熔体中拉出单晶，在该坩埚上方布置有隔热罩。 被拉伸的单晶直径至少为200mm。 硅熔体暴露于在坩埚壁的区域中对熔体施加基本垂直取向的力的行进磁场的影响。 还有一种适用于执行该过程的装置。

    Process and device for the production of a single crystal
    5.
    发明授权
    Process and device for the production of a single crystal 有权
    用于生产单晶的工艺和装置

    公开(公告)号：US06238477B1

    公开(公告)日：2001-05-29

    申请号：US09520290

    申请日：2000-03-07

    申请人： Wilfried von Ammon ,  Erich Tomzig ,  Janis Virbulis

    发明人： Wilfried von Ammon ,  Erich Tomzig ,  Janis Virbulis

    IPC分类号： C30B1520

    CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： A process and device for the production of a single crystal of semiconductor material is by pulling the single crystal from a melt, which is contained in a crucible and is heated by a side heater surrounding the crucible. The melt is additionally heated, in an annular region around the single crystal, by an annular heating device which surrounds the single crystal and is positioned above the melt.

    摘要翻译： 用于制造半导体材料的单晶的工艺和装置是通过从包含在坩埚中的熔体中拉出单晶并且被围绕坩埚的侧加热器加热。 熔体在单晶环绕的环形区域中通过围绕单晶并位于熔体上方的环形加热装置另外加热。

    Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
    7.
    发明授权
    Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions 有权
    用于制造具有确定的缺陷分布的硅单晶，硅单晶和硅半导体晶片的方法和装置

    公开(公告)号：US07708830B2

    公开(公告)日：2010-05-04

    申请号：US11513701

    申请日：2006-08-31

    申请人： Wilfried Von Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

    发明人： Wilfried Von Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

    IPC分类号： C30B15/10

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10T117/1068

    摘要： A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm−3 to 7.2*1017 cm−3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

    摘要翻译： 通过使用Czochralski法从保持在旋转坩埚中的熔体中拉出单晶而生长单晶的方法，在生长前沿生长的单晶，故意将热量供给到 通过针对生长前沿的热通量的增长前沿。 该方法产生氧含量为4×10 17 cm -3至7.2×10 17 cm -3的硅单晶，并且硼或磷的径向浓度变化小于5％，其没有凝聚的自点缺陷。 半导体晶片与单晶分离。 这些半导体晶片可以具有作为唯一自点缺陷类型的聚集空位缺陷（COP），或者可以具有某些其他缺陷分布。

    Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
    8.
    发明申请
    Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions 有权
    用于制造具有确定的缺陷分布的硅单晶，硅单晶和硅半导体晶片的方法和装置

    公开(公告)号：US20060292890A1

    公开(公告)日：2006-12-28

    申请号：US11513701

    申请日：2006-08-31

    申请人： Wilfried Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

    发明人： Wilfried Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

    IPC分类号： H01L21/31

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10T117/1068

    摘要： A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm−3 to 7.2*1017 cm−3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

    摘要翻译： 通过使用Czochralski法从保持在旋转坩埚中的熔体中拉出单晶而生长单晶的方法，在生长前沿生长的单晶，故意将热量供给到 通过针对生长前沿的热通量的增长前沿。 该方法产生氧含量为4×10 17 cm -3至7.2×10 17 cm 3的硅单晶， -3和硼或磷的径向浓度变化小于5％，其没有凝聚的自点缺陷。 半导体晶片与单晶分离。 这些半导体晶片可以具有作为唯一自点缺陷类型的聚集空位缺陷（COP），或者可以具有某些其他缺陷分布。

    Silicon single crystal produced by crucible-free float zone pulling
    9.
    发明授权
    Silicon single crystal produced by crucible-free float zone pulling 有权
    通过无坩埚浮动区域拉制生产的硅单晶

    公开(公告)号：US06840998B2

    公开(公告)日：2005-01-11

    申请号：US10201431

    申请日：2002-07-23

    申请人： Ludwig Altmannshofer ,  Manfred Grundner ,  Janis Virbulis

    发明人： Ludwig Altmannshofer ,  Manfred Grundner ,  Janis Virbulis

    IPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/26 ,  C30B13/30 ,  B32B3/02 ,  C01B33/02

    CPC分类号： C30B29/06 ,  C30B13/26 ,  Y10T428/21

    摘要： A silicon single crystal is produced by crucible-free float zone pulling, has a diameter of at least 200 mm over a length of at least 200 mm and is free of dislocations in the region of this length. A silicon wafer is separated from the silicon single crystal by a process for producing the silicon single crystal. The silicon single crystal is produced by crucible-free float zone pulling in a receptacle, in which an atmosphere of inert gas and nitrogen exerts a pressure of 1.5-2.2 bar, the atmosphere being continuously exchanged, with the volume of the receptacle being exchanged at least twice per hour. A flat coil with an external diameter of at least 220 mm is inserted in order to melt a stock ingot. The single crystal is pulled at a rate in a range from 1.4-2.2 mm/min and is periodically rotated through a sequence of rotation angles. The direction of rotation is changed, after each rotation, by a rotation angle belonging to the sequence, a change in the direction of rotating defining a turning point on the circumference of the single crystal, and at least one recurring pattern of turning points is formed, in which the turning points are distributed on straight lines which are oriented parallel to the z-axis and are uniformly spaced apart from one another.

    摘要翻译： 通过无坩埚浮动区域拉伸制造硅单晶，在至少200mm的长度上具有至少200mm的直径，并且在该长度的区域中没有位错。 通过制造硅单晶的工艺将硅晶片与硅单晶分离。 硅单晶通过在容器中无坩埚浮动区域拉动而产生，其中惰性气体和氮气的气氛施加1.5-2.2巴的压力，连续更换气氛，将容器的体积更换为 每小时至少两次。 插入具有至少220mm的外径的扁平线圈以熔化原料锭。 单晶以1.4-2.2mm / min的速率被拉伸，并且通过一系列旋转角度周期性地旋转。 旋转方向在每次旋转之后改变属于该顺序的旋转角度，形成限定单晶圆周上的转折点的旋转方向的变化和至少一个转折点的重复图案 其中转折点分布在平行于z轴取向并且彼此均匀间隔开的直线上。