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公开(公告)号：US07323051B2
公开(公告)日：2008-01-29
申请号：US11248458
申请日：2005-10-12
申请人： Hudson M. Hobgood , Jason R. Jenny , David Phillip Malta , Valeri F. Tsvetkov , Calvin H. Carter, Jr. , Robert Tyler Leonard , George J. Fechko, Jr.
发明人： Hudson M. Hobgood , Jason R. Jenny , David Phillip Malta , Valeri F. Tsvetkov , Calvin H. Carter, Jr. , Robert Tyler Leonard , George J. Fechko, Jr.
IPC分类号： C30B25/12
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.
摘要翻译： 公开了用于在种子生长系统中生产高质量的碳化硅块状单晶的方法。 该方法包括用低孔隙率背衬材料将晶种定位在种子保持器上，该材料提供了从种子对碳化硅升华的蒸汽屏障，并使种子和背衬材料之间的热导率差最小化以最小化或消除温差 跨越种子，并且同样使来自种子后部的蒸汽输送最小化或消除，否则将引发和传播生长晶体中的缺陷。
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2.发明授权Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient 有权通过在含氢环境中升华生长来还原碳化硅晶体中的氮含量公开(公告)号：US07220313B2
公开(公告)日：2007-05-22
申请号：US10628188
申请日：2003-07-28
申请人： George J. Fechko, Jr. , Jason R. Jenny , Hudson M. Hobgood , Valeri F. Tsvetkov , Calvin H. Carter, Jr.
发明人： George J. Fechko, Jr. , Jason R. Jenny , Hudson M. Hobgood , Valeri F. Tsvetkov , Calvin H. Carter, Jr.
CPC分类号： C30B23/005 , C30B23/002 , C30B29/36 , Y10S117/906
摘要： The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.
摘要翻译： 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢的环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。
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公开(公告)号：US07316747B2
公开(公告)日：2008-01-08
申请号：US11248579
申请日：2005-10-12
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov , George J. Fechko, Jr. , Calvin H. Carter, Jr.
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov , George J. Fechko, Jr. , Calvin H. Carter, Jr.
IPC分类号： C30B25/12
CPC分类号： C30B23/00 , C30B23/025 , C30B29/36 , C30B33/00 , H01L21/324
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译： 公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热 晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。
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4.发明授权Process for producing silicon carbide crystals having increased minority carrier lifetimes 有权具有增加的少数载流子寿命的碳化硅晶体的生产方法公开(公告)号：US07811943B2
公开(公告)日：2010-10-12
申请号：US11052679
申请日：2005-02-07
申请人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
发明人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
IPC分类号： H01L21/31
摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
摘要翻译： 描述了一种用于生产具有增加的少数载流子寿命的碳化硅晶体的方法。 该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。
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5.发明授权公开(公告)号：US06964917B2
公开(公告)日：2005-11-15
申请号：US10249425
申请日：2003-04-08
IPC分类号： C30B31/00 , C30B31/20 , H01L21/261 , H01L21/425 , H01L21/265
CPC分类号： H01L21/0445 , C30B29/36 , C30B31/00 , C30B31/20 , H01L21/263 , Y10S438/931
摘要： A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of 31P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.
摘要翻译： 公开了用于在用于半导体应用的单晶碳化硅中产生高度均匀的半绝缘特性的方法。 该方法包括用具有净p型掺杂和深层级的中子照射具有等于或小于原始净p型掺杂的浓度的等于或小于等于或等于 深层次浓度和原始净p型掺杂的总和。
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6.发明授权Process for producing silicon carbide crystals having increased minority carrier lifetimes 有权具有增加的少数载流子寿命的碳化硅晶体的生产方法公开(公告)号：US08618553B2
公开(公告)日：2013-12-31
申请号：US12871095
申请日：2010-08-30
申请人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
发明人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
IPC分类号： H01L29/15
摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
摘要翻译： 描述了一种用于生产具有增加的少数载流子寿命的碳化硅晶体的方法。 该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。
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公开(公告)号：US06218680B1
公开(公告)日：2001-04-17
申请号：US09313802
申请日：1999-05-18
IPC分类号： H01L310312
摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
摘要翻译： 公开了一种半绝缘体碳化硅单晶，其在室温下的电阻率至少为5000欧姆 - 厘米，深层捕集元素的浓度低于将影响晶体电阻率的量，优选低于 可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。
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公开(公告)号：US06403982B2
公开(公告)日：2002-06-11
申请号：US09757950
申请日：2001-01-10
IPC分类号： H01L310312
摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
摘要翻译： 公开了一种半绝缘体碳化硅单晶，其在室温下的电阻率至少为5000欧姆 - 厘米，深层捕集元素的浓度低于将影响晶体电阻率的量，优选低于 可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。
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公开(公告)号：US06396080B2
公开(公告)日：2002-05-28
申请号：US09866129
申请日：2001-05-25
IPC分类号： H01L310312
CPC分类号： H01L29/1608 , C30B23/00 , C30B29/36 , C30B33/00 , H01L29/778 , H01L29/78 , H01L29/812
摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
摘要翻译： 公开了半导体碳化硅单体，其在室温下具有至少5000欧姆 - 厘米的电阻率，并且捕获元素的浓度从产生低于量的价态或导带产生至少700meV的状态 这将影响晶体的电阻率，优选低于可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。
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公开(公告)号：US06639247B2
公开(公告)日：2003-10-28
申请号：US09810830
申请日：2001-03-16
IPC分类号： H01L310312
摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
摘要翻译： 公开了一种半绝缘体碳化硅单晶，其在室温下的电阻率至少为5000欧姆厘米，深层捕获元素的浓度低于将影响晶体电阻率的量，优选低于 可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。
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