摘要:
The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy.
摘要:
The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, and d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy.
摘要:
Composite substrates are produced that include a strained III-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the III-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The III-nitride material may be formed with a Ga polarity or an N polarity. The desired lattice strain may be developed by forming a buffer layer between the III-nitride material and a growth substrate, implanting a dopant in the III-nitride material to modify its lattice parameter, or forming the III-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE.
摘要:
A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10−3 ohm·cm and a thermal conductivity of greater than 100 W·m−1·K−1, a bonding layer, a first seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, a second seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and an active layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750° C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm·cm2.
摘要翻译:一种异质结构,其依次包括具有小于10-3欧姆·厘米的电阻率和大于100W·m-1·K-1的导热率的材料的支撑基板,接合层,第一 组成为Al x In y Ga(1-xy)N的单晶材料的第二晶种层和组成为Al x In y Ga(1-xy)N的单晶材料的有源层的组成为Al x In y Ga(1-xy)N的单晶材料的籽晶层, N,并且以3至100微米的厚度存在。 支撑衬底,结合层和第一种子层的材料在大于750℃的温度下是难熔的,活性层和第二种子层的晶格参数差异小于0.005,活性层 无裂纹,并且异质结构在接合层和第一种子层之间具有小于或等于0.1欧姆·cm 2的比接触电阻。
摘要:
A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10−3 ohm·cm and a thermal conductivity of greater than 100 W·m−1·K−1, a bonding layer, a first seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, a second seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and an active layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750° C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm·cm2.
摘要翻译:一种异质结构,其依次包括具有小于10-3欧姆·厘米的电阻率和大于100W·m-1·K-1的导热率的材料的支撑基板,接合层,第一 组成为Al x In y Ga(1-xy)N的单晶材料的第二晶种层和组成为Al x In y Ga(1-xy)N的单晶材料的有源层的组成为Al x In y Ga(1-xy)N的单晶材料的籽晶层, N,并且以3至100微米的厚度存在。 支撑衬底,结合层和第一种子层的材料在大于750℃的温度下是难熔的,活性层和第二种子层的晶格参数差异小于0.005,活性层 无裂纹,并且异质结构在接合层和第一种子层之间具有小于或等于0.1欧姆·cm 2的比接触电阻。
摘要:
The present invention relates to a support for the epitaxy of a layer of a material of composition AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1 and x+y≦1, having successively from its base to its surface; a support substrate, a bonding layer, a monocrystalline seed layer for the epitaxial growth of the layer of material AlxInyGa(1-x-y)N. The support substrate is made of a material that presents an electrical resistivity of less than 10−3 ohm·cm and a thermal conductivity of greater than 100 W·m−1·K−1. The seed layer is in a material of the composition AlxInyGa(1-x-y)N, where 0≦x≦1, 0≦y≦1 and x+y≦1. The seed and bonding layers provide a specific contact resistance that is less than or equal to 0.1 ohm·cm−2, and the materials of the support substrate, the bonding layer and the seed layer are refractory at a temperature of greater than 750° C. or even greater than 1000° C. The invention also relates to methods for manufacturing the support.
摘要翻译:本发明涉及一种用于对Al x In y Ga(1-xy)N组成的材料的层的外延进行外延的载体,其中0≦̸ x≦̸ 1,0