Test yield estimate for semiconductor products created from a library
    1.
    发明授权
    Test yield estimate for semiconductor products created from a library 有权
    从图书馆创建的半导体产品的测试产量估算

    公开(公告)号:US07386815B2

    公开(公告)日:2008-06-10

    申请号:US11163696

    申请日:2005-10-27

    IPC分类号: G06F17/50

    摘要: Disclosed is a method that predicts test yield for a semiconductor product, prior to design layout. This is accomplished by applying a critical area analysis to individual library elements that are used to form a specific product and by estimating the test yield impact of combining these library elements. For example, the method considers the test yield impact of sensitivity to library element to library element shorts and the test yield impact of sensitivity to wiring faults. The disclosed method further allows die size growth to be traded off against the use of library elements with higher test yield in order to provide an optimal design solution. Thus, the method may be used to modify library element selection so as to optimize test yield. Lastly, the method further repeats itself at key design checkpoints to revalidate initial test yield (and cost) assumptions made when the product was quoted to a customer. Thus, the method provides increased accuracy of test yield estimate from initial sizing through design and further allows designs to be modified to improve test yield.

    摘要翻译: 公开了一种在设计布局之前预测半导体产品的测试产量的方法。 这是通过对用于形成特定产品的单个库元素应用关键区域分析,并通过估计组合这些库元素的测试产出影响来实现的。 例如,该方法考虑了库元素对库元素短路的灵敏度的测试产量影响以及对接线故障的灵敏度的测试产量影响。 所公开的方法进一步允许模具尺寸增长与使用具有较高测试成品率的库元件进行交易,以便提供最佳设计解决方案。 因此,该方法可用于修改库元素选择以优化测试产量。 最后,该方法在关键设计检查点进一步重复,以重新验证产品被引用给客户时的初始测试收益(和成本)假设。 因此,该方法通过设计从初始尺寸提高了测试产量估算的准确度,并进一步允许修改设计以提高测试产量。

    Test yield estimate for semiconductor products created from a library
    2.
    发明授权
    Test yield estimate for semiconductor products created from a library 有权
    从图书馆创建的半导体产品的测试产量估算

    公开(公告)号:US08010916B2

    公开(公告)日:2011-08-30

    申请号:US12062586

    申请日:2008-04-04

    IPC分类号: G06F17/50

    摘要: Disclosed is a method that predicts test yield for a semiconductor product, prior to design layout. This is accomplished by applying a critical area analysis to individual library elements that are used to form a specific product and by estimating the test yield impact of combining these library elements. For example, the method considers the test yield impact of sensitivity to library element to library element shorts and the test yield impact of sensitivity to wiring faults. The disclosed method further allows die size growth to be traded off against the use of library elements with higher test yield in order to provide an optimal design solution. Thus, the method may be used to modify library element selection so as to optimize test yield. Lastly, the method further repeats itself at key design checkpoints to revalidate initial test yield (and cost) assumptions made when the product was quoted to a customer. Thus, the method provides increased accuracy of test yield estimate from initial sizing through design and further allows designs to be modified to improve test yield.

    摘要翻译: 公开了一种在设计布局之前预测半导体产品的测试产量的方法。 这是通过对用于形成特定产品的单个库元素应用关键区域分析,并通过估计组合这些库元素的测试产出影响来实现的。 例如,该方法考虑了库元素对库元素短路的灵敏度的测试产量影响以及对接线故障的灵敏度的测试产量影响。 所公开的方法进一步允许模具尺寸增长与使用具有较高测试成品率的库元件进行交易,以便提供最佳设计解决方案。 因此,该方法可用于修改库元素选择以优化测试产量。 最后,该方法在关键设计检查点进一步重复,以重新验证产品被引用给客户时的初始测试收益(和成本)假设。 因此,该方法通过设计从初始尺寸提高了测试产量估算的准确度,并进一步允许修改设计以提高测试产量。

    TEST YIELD ESTIMATE FOR SEMICONDUCTOR PRODUCTS CREATED FROM A LIBRARY
    3.
    发明申请
    TEST YIELD ESTIMATE FOR SEMICONDUCTOR PRODUCTS CREATED FROM A LIBRARY 有权
    从图书馆创建的半导体产品的测试估计

    公开(公告)号:US20080189664A1

    公开(公告)日:2008-08-07

    申请号:US12062586

    申请日:2008-04-04

    IPC分类号: G06F17/50

    摘要: Disclosed is a method that predicts test yield for a semiconductor product, prior to design layout. This is accomplished by applying a critical area analysis to individual library elements that are used to form a specific product and by estimating the test yield impact of combining these library elements. For example, the method considers the test yield impact of sensitivity to library element to library element shorts and the test yield impact of sensitivity to wiring faults. The disclosed method further allows die size growth to be traded off against the use of library elements with higher test yield in order to provide an optimal design solution. Thus, the method may be used to modify library element selection so as to optimize test yield. Lastly, the method further repeats itself at key design checkpoints to revalidate initial test yield (and cost) assumptions made when the product was quoted to a customer. Thus, the method provides increased accuracy of test yield estimate from initial sizing through design and further allows designs to be modified to improve test yield.

    摘要翻译: 公开了一种在设计布局之前预测半导体产品的测试产量的方法。 这是通过对用于形成特定产品的单个库元素应用关键区域分析,并通过估计组合这些库元素的测试产出影响来实现的。 例如,该方法考虑了库元素对库元素短路的灵敏度的测试产量影响以及对接线故障的灵敏度的测试产量影响。 所公开的方法进一步允许模具尺寸增长与使用具有较高测试成品率的库元件进行交易,以便提供最佳设计解决方案。 因此,该方法可用于修改库元素选择以优化测试产量。 最后,该方法在关键设计检查点进一步重复,以重新验证产品被引用给客户时的初始测试收益(和成本)假设。 因此,该方法通过设计从初始尺寸提高了测试产量估算的准确度,并进一步允许修改设计以提高测试产量。

    Design Structure for a Redundant Micro-Loop Structure for use in an Integrated Circuit Physical Design Process and Method of Forming the Same
    4.
    发明申请
    Design Structure for a Redundant Micro-Loop Structure for use in an Integrated Circuit Physical Design Process and Method of Forming the Same 有权
    用于集成电路物理设计过程的冗余微环结构的设计结构及其形成方法

    公开(公告)号:US20090158231A1

    公开(公告)日:2009-06-18

    申请号:US11955580

    申请日:2007-12-13

    IPC分类号: G06F17/50

    摘要: A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种用于集成电路的设计结构,该集成电路包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线,以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Design Structure for a Redundant Micro-Loop Structure for use in an Integrated Circuit Physical Design Process and Method of Forming the Same
    5.
    发明申请
    Design Structure for a Redundant Micro-Loop Structure for use in an Integrated Circuit Physical Design Process and Method of Forming the Same 有权
    用于集成电路物理设计过程的冗余微环结构的设计结构及其形成方法

    公开(公告)号:US20100211923A9

    公开(公告)日:2010-08-19

    申请号:US11955580

    申请日:2007-12-13

    IPC分类号: G06F17/50

    摘要: A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种用于集成电路的设计结构,该集成电路包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线,以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Redundant Micro-Loop Structure For Use In An Integrated Circuit Physical Design Process And Method Of Forming The Same
    6.
    发明申请
    Redundant Micro-Loop Structure For Use In An Integrated Circuit Physical Design Process And Method Of Forming The Same 有权
    冗余微环结构用于集成电路物理设计过程及其形成方法

    公开(公告)号:US20080097738A1

    公开(公告)日:2008-04-24

    申请号:US11552225

    申请日:2006-10-24

    IPC分类号: G06F17/50

    摘要: An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种集成电路,包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线和与第二线的第一距离的第四线 第二层线路。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same
    7.
    发明授权
    Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same 有权
    冗余微环结构用于集成电路物理设计过程及其形成方法

    公开(公告)号:US07960836B2

    公开(公告)日:2011-06-14

    申请号:US12045374

    申请日:2008-03-10

    IPC分类号: H01L23/52

    摘要: An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and Fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种集成电路,包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线和与第二线的第一距离的第四线 第二层线路。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    REDUNDANT MICRO-LOOP STRUCTURE FOR USE IN AN INTERGRATED CIRCUIT PHYSICAL DESIGN PROCESS AND METHOD OF FORMING THE SAME
    8.
    发明申请
    REDUNDANT MICRO-LOOP STRUCTURE FOR USE IN AN INTERGRATED CIRCUIT PHYSICAL DESIGN PROCESS AND METHOD OF FORMING THE SAME 有权
    用于集成电路的冗余微环结构物理设计过程及其形成方法

    公开(公告)号:US20080150149A1

    公开(公告)日:2008-06-26

    申请号:US12045374

    申请日:2008-03-10

    IPC分类号: H01L23/52 G06F17/50

    摘要: An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and Fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种集成电路,包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线和与第二线的第一距离的第四线 第二层线路。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same
    9.
    发明授权
    Redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same 有权
    冗余微环结构用于集成电路物理设计过程及其形成方法

    公开(公告)号:US08234594B2

    公开(公告)日:2012-07-31

    申请号:US11552225

    申请日:2006-10-24

    摘要: An integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located at a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is approximately axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is approximately axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种集成电路,包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线和位于距离第二线的第一距离的第四线 在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔大致轴向对准第一通孔。 第三通过在第四线的第二位置连接第三和第四导线。 在第二位置连接第一和第四导线的第四通孔,第四通孔与第三通孔大致轴向对齐。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。

    Design structure for a redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same
    10.
    发明授权
    Design structure for a redundant micro-loop structure for use in an integrated circuit physical design process and method of forming the same 有权
    用于集成电路物理设计过程中使用的冗余微环结构的设计结构及其形成方法

    公开(公告)号:US07984394B2

    公开(公告)日:2011-07-19

    申请号:US11955580

    申请日:2007-12-13

    IPC分类号: G06F17/50

    摘要: A design structure for an integrated circuit including a first wire of a first level of wiring tracks, a second wire of a second level of wiring tracks, a third wire of a third level of wiring tracks, and a fourth wire located a first distance from the second wire in the second level of wiring tracks. A first via connects the first and second wires at a first location of the second wire. A second via connects the second and third wires at the first location, the second via is substantially axially aligned with the first via. A third via connecting the third and fourth wires at a second location of the fourth wire. A fourth via connecting the first and fourth wires at the second location, the fourth via is substantially axially aligned with the third via. The second, third, and fourth vias, and the third and fourth wires form a path between the first and second wires redundant to the first via.

    摘要翻译: 一种用于集成电路的设计结构,该集成电路包括第一级布线轨道的第一线,第二级布线轨道的第二线,第三级布线轨道的第三线,以及位于第一距离处的第四线 第二根电线在第二级线路上。 第一通孔在第二导线的第一位置连接第一和第二导线。 第二通孔在第一位置处连接第二和第三导线,第二通孔基本上与第一通孔轴向对准。 第三通过在第四线的第二位置连接第三和第四导线。 第四通孔在第二位置处连接第一和第四导线,第四通孔基本上与第三通孔轴向对准。 第二,第三和第四通孔以及第三和第四导线形成第一和第二导线之间的路径,该路径对于第一通孔是冗余的。