公开(公告)号：US20070045679A1

公开(公告)日：2007-03-01

申请号：US11211651

申请日：2005-08-26

申请人： Jeffrey McKee ,  Richard Mauritzson

发明人： Jeffrey McKee ,  Richard Mauritzson

IPC分类号： H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14687 ,  H01L27/14689

摘要： A pixel cell array architecture having ion implant regions as isolation regions between adjacent active areas of pixels in the array. In one exemplary embodiment, the invention provides an ion-doped p-well region separating n-type photosensitive areas of neighboring pixel cells. The pixel cells have increased fill factor without encountering the disadvantages associated with conventional shallow trench isolation regions.

摘要翻译： 具有离子注入区域作为阵列中像素的相邻有效区域之间的隔离区域的像素单元阵列架构。 在一个示例性实施例中，本发明提供了分离相邻像素单元的n型感光区域的离子掺杂p阱区域。 像素单元具有增加的填充因子，而不会遇到与常规浅沟槽隔离区相关的缺点。

公开(公告)号：US20060044438A1

公开(公告)日：2006-03-02

申请号：US10925172

申请日：2004-08-25

申请人： Richard Mauritzson ,  Joey Shah

发明人： Richard Mauritzson ,  Joey Shah

IPC分类号： H01L27/00 ,  H01L27/148 ,  H01L29/768 ,  H04N3/14 ,  H04N5/335

CPC分类号： H04N5/37452 ,  H04N5/3559

摘要： A pixel cell in which a capacitance is coupled between a storage node and a row select transistor. The pixel cell utilizes a readout timing sequence between operation of a reset transistor and a row select transistor to boost a reset voltage.

摘要翻译： 其中电容耦合在存储节点和行选择晶体管之间的像素单元。 像素单元利用复位晶体管和行选择晶体管的操作之间的读出定时序列来升高复位电压。

公开(公告)号：US20060008938A1

公开(公告)日：2006-01-12

申请号：US11220670

申请日：2005-09-08

申请人： Chandra Mouli ,  Howard Rhodes ,  Richard Mauritzson

发明人： Chandra Mouli ,  Howard Rhodes ,  Richard Mauritzson

IPC分类号： H01L21/339

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/0352 ,  H01L31/101

摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.

公开(公告)号：US20090127437A1

公开(公告)日：2009-05-21

申请号：US11942847

申请日：2007-11-20

申请人： Xiangli Li ,  Richard Mauritzson ,  Xiaofeng Fan ,  John Ladd

发明人： Xiangli Li ,  Richard Mauritzson ,  Xiaofeng Fan ,  John Ladd

IPC分类号： H01L27/00

CPC分类号： H04N5/361 ,  H01L27/14609 ,  H01L27/14643

摘要： Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.

摘要翻译： 降低CMOS图像传感器中的暗电流和热像素的方法和装置。 像素装置包括能够产生暗电流的光电传感器，通过电荷转移晶体管耦合到光传感器的浮动扩散区域，连接在浮置扩散区域和阵列像素电源电压之间的静止晶体管。 当从像素采样像素信号时，阵列电源电压在第一和第二电压之间变化。

公开(公告)号：US20080096302A1

公开(公告)日：2008-04-24

申请号：US11783040

申请日：2007-04-05

申请人： Chandra Mouli ,  Howard Rhodes ,  Richard Mauritzson

发明人： Chandra Mouli ,  Howard Rhodes ,  Richard Mauritzson

IPC分类号： H01L31/00

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/0352 ,  H01L31/101

摘要： A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface latter has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concentration of about 5×1017 atoms per cm3 to about 1×1019 atoms per cm3. The ultra-shallow highly-doped surface layer is formed by diffusion of ions from a doped layer into the substrate or by a plasma doping process. The ultra-shallow pinned layer is in contact with a charge collection region of a second conductivity type.

摘要翻译： 公开了具有第一导电类型的超浅高掺杂表面层和形成方法的钉扎光电二极管。 超浅高掺杂表面层的厚度为约100埃至约500埃，掺杂剂浓度约5×10 17原子/ cm 3至约1×10 3原子/ SUP> 19个/ cm 3原子/ cm 3。 超浅高掺杂表面层通过将离子从掺杂层扩散到衬底中或通过等离子体掺杂工艺形成。 超浅钉扎层与第二导电类型的电荷收集区域接触。

公开(公告)号：US20070272830A1

公开(公告)日：2007-11-29

申请号：US11882690

申请日：2007-08-03

申请人： Peter Altice ,  Jeffrey Bruce ,  Jeff McKee ,  Joey Shah ,  Richard Mauritzson

发明人： Peter Altice ,  Jeffrey Bruce ,  Jeff McKee ,  Joey Shah ,  Richard Mauritzson

IPC分类号： H01L27/00

CPC分类号： G01J1/44 ,  H03F3/082 ,  H04N5/3591 ,  H04N5/3592 ,  H04N5/3741

摘要： An imaging system includes a pixel that does not require a row select transistor. Instead, an operating voltage is selectively provided to the pixel's readout circuitry, and the readout circuitry provides output signals based on charge or voltage of a storage node. The operating voltage can be selectively provided to each row of a pixel array by a row driver. Each pixel includes a source follower transistor that provides an output signal on a column output line for readout. An anti-blooming transistor may be linked to each pixel's photosensor to provide an overflow path for electrons during charge integration, prior to transfer of charge to the pixel's storage node by a transfer transistor. Electrons not produced by an image are introduced to the photosensor prior to image acquisition, filling traps in the photosensor to reduce image degradation.

公开(公告)号：US20050167708A1

公开(公告)日：2005-08-04

申请号：US11094363

申请日：2005-03-31

申请人： Howard Rhodes ,  Richard Mauritzson ,  Inna Patrick

发明人： Howard Rhodes ,  Richard Mauritzson ,  Inna Patrick

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/062 ,  H01L31/103

CPC分类号： H01L27/14643 ,  H01L27/14601 ,  H01L31/03529 ,  H01L31/103 ,  Y02E10/50

摘要： An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the resulting photodiode to extend out beneath an adjoining gate. Under an alternate embodiment, a fourth implant is added, under an increased implant angle, in the region of the second implant. The resulting photodiode structure substantially reduces or eliminates transfer gate subthreshold leakage.

摘要翻译： 公开了一种图像感测电路和方法，其中通过一系列成角度的植入物在基板中形成光电二极管。 光电二极管由第一，第二和第三植入物形成，其中植入物中的至少一个是成角度的，以便使得到的光电二极管延伸出邻近的栅极之下。 在替代实施例中，在第二植入物的区域内以增加的植入角度添加第四植入物。 所得到的光电二极管结构基本上减少或消除传输门极阈值泄漏。

公开(公告)号：US08314498B2

公开(公告)日：2012-11-20

申请号：US12879452

申请日：2010-09-10

申请人： Kevin Hutto ,  Ross Dando ,  Swarnal Borthakur ,  Richard Mauritzson

发明人： Kevin Hutto ,  Ross Dando ,  Swarnal Borthakur ,  Richard Mauritzson

IPC分类号： H01L23/48

CPC分类号： H01L31/02327 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of the substrate, an electrically conductive interconnect formed through the substrate to interconnect the first and second conductive pads, and a dielectric surrounding the second conductive pad and at least a portion of the interconnect. Methods of forming the integrated circuit are also described.

摘要翻译： 用于例如背面照明成像器件的集成电路包括设置在衬底的第一侧上的电路，连接到电路并与衬底的第一侧间隔开的第一导电焊盘，与衬底间隔开的第二导电焊盘 衬底的第二侧，通过衬底形成的用于互连第一和第二导电焊盘的导电互连，以及围绕第二导电焊盘和至少一部分互连的电介质。 还描述了形成集成电路的方法。

公开(公告)号：US07858914B2

公开(公告)日：2010-12-28

申请号：US11942847

申请日：2007-11-20

申请人： Xiangli Li ,  Richard Mauritzson ,  Xiaofeng Fan ,  John Ladd

发明人： Xiangli Li ,  Richard Mauritzson ,  Xiaofeng Fan ,  John Ladd

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/217

CPC分类号： H04N5/361 ,  H01L27/14609 ,  H01L27/14643

摘要： Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.

摘要翻译： 降低CMOS图像传感器中的暗电流和热像素的方法和装置。 像素装置包括能够产生暗电流的光电传感器，通过电荷转移晶体管耦合到光传感器的浮动扩散区域，连接在浮置扩散区域和阵列像素电源电压之间的静止晶体管。 当从像素采样像素信号时，阵列电源电压在第一和第二电压之间变化。

公开(公告)号：US20070045682A1

公开(公告)日：2007-03-01

申请号：US11214932

申请日：2005-08-31

申请人： Sungkwon Hong ,  Richard Mauritzson ,  Ralph Kauffman

发明人： Sungkwon Hong ,  Richard Mauritzson ,  Ralph Kauffman

IPC分类号： H01L31/113

CPC分类号： H01L27/14689 ,  H01L27/14601

摘要： A pixel cell including a substrate of a first conductivity type over an epitaxial layer of a second conductivity type. The epitaxial layer has a dopant gradient, wherein the dopant concentration decreases from a surface of the epitaxial layer adjacent the substrate to the surface of the epitaxial layer opposite the substrate. A photo-conversion device is at a surface of the epitaxial layer.

摘要翻译： 一种像素单元，包括在第二导电类型的外延层上的第一导电类型的衬底。 外延层具有掺杂剂梯度，其中掺杂剂浓度从邻近衬底的外延层的表面降低到与衬底相对的外延层的表面。 光转换装置在外延层的表面。