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公开(公告)号:US20140080295A1
公开(公告)日:2014-03-20
申请号:US13942257
申请日:2013-07-15
申请人: Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H. Houston
发明人: Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H. Houston
CPC分类号: H01L29/1606 , H01B5/14 , H01B13/30 , H01L21/02381 , H01L21/02488 , H01L21/02518 , H01L21/02527 , H01L21/02664 , H01L21/2236 , H01L21/3003
摘要: A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.
摘要翻译: 一种在SiO 2衬底上引入单层石墨中的带隙的方法,包括在SiO 2 / Si衬底上制备石墨烯薄片和CVD生长的石墨烯薄膜并进行石墨烯氢化的步骤。 另外,通过表面吸附物控制多数载体的类型。
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公开(公告)号:US09312130B2
公开(公告)日:2016-04-12
申请号:US13942257
申请日:2013-07-15
申请人: Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H Houston
发明人: Jeffrey W. Baldwin , Bernard R. Matis , James S. Burgess , Felipe Bulat-Jara , Adam L. Friedman , Brian H Houston
IPC分类号: H01L21/02 , H01B13/30 , H01B5/14 , H01L29/16 , H01L21/223
CPC分类号: H01L29/1606 , H01B5/14 , H01B13/30 , H01L21/02381 , H01L21/02488 , H01L21/02518 , H01L21/02527 , H01L21/02664 , H01L21/2236 , H01L21/3003
摘要: A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.
摘要翻译: 一种在SiO 2衬底上引入单层石墨中的带隙的方法,包括在SiO 2 / Si衬底上制备石墨烯薄片和CVD生长的石墨烯薄膜并进行石墨烯氢化的步骤。 另外,通过表面吸附物控制多数载体的类型。
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