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    Vertically integrated image sensor chips and methods for forming the same
    1.
    发明授权
    Vertically integrated image sensor chips and methods for forming the same 有权
    垂直集成的图像传感器芯片及其形成方法

    公开(公告)号：US08766387B2

    公开(公告)日：2014-07-01

    申请号：US13475301

    申请日：2012-05-18

    申请人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

    发明人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

    IPC分类号： H01L31/02

    CPC分类号： H01L27/14687 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469 ,  H01L2224/48463

    摘要： A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.

    摘要翻译： 一种装置包括背面照明（BSI）图像传感器芯片，其包括设置在第一半导体衬底的前侧上的图像传感器，以及包括在第一半导体衬底的前侧上的多个金属层的第一互连结构。 器件芯片被结合到图像传感器芯片。 器件芯片包括在第二半导体衬底的正面上的有源器件和在第二半导体衬底的正面上包括多个金属层的第二互连结构。 第一通孔穿过BSI图像传感器芯片以连接到第二互连结构中的第一金属焊盘。 第二通孔穿过第一互连结构中的电介质层，以连接到第一互连结构中的第二金属焊盘，其中第一通孔和第二通孔电连接。

    Vertically Integrated Image Sensor Chips and Methods for Forming the Same
    2.
    发明申请
    Vertically Integrated Image Sensor Chips and Methods for Forming the Same 有权
    垂直集成的图像传感器芯片及其形成方法

    公开(公告)号：US20130307103A1

    公开(公告)日：2013-11-21

    申请号：US13475301

    申请日：2012-05-18

    申请人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

    发明人： Jeng-Shyan Lin ,  Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Szu-Ying Chen ,  Wen-De Wang ,  Tzu-Hsuan Hsu

    IPC分类号： H01L31/0232 ,  H01L31/02

    CPC分类号： H01L27/14687 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1469 ,  H01L2224/48463

    摘要： A device includes a Backside Illumination (BSI) image sensor chip, which includes an image sensor disposed on a front side of a first semiconductor substrate, and a first interconnect structure including a plurality of metal layers on the front side of the first semiconductor substrate. A device chip is bonded to the image sensor chip. The device chip includes an active device on a front side of a second semiconductor substrate, and a second interconnect structure including a plurality of metal layers on the front side of the second semiconductor substrate. A first via penetrates through the BSI image sensor chip to connect to a first metal pad in the second interconnect structure. A second via penetrates through a dielectric layer in the first interconnect structure to connect to a second metal pad in the first interconnect structure, wherein the first via and the second via are electrically connected.

    摘要翻译： 一种装置包括背面照明（BSI）图像传感器芯片，其包括设置在第一半导体衬底的前侧上的图像传感器，以及包括在第一半导体衬底的前侧上的多个金属层的第一互连结构。 器件芯片被结合到图像传感器芯片。 器件芯片包括在第二半导体衬底的正面上的有源器件和在第二半导体衬底的正面上包括多个金属层的第二互连结构。 第一通孔穿过BSI图像传感器芯片以连接到第二互连结构中的第一金属焊盘。 第二通孔穿过第一互连结构中的电介质层，以连接到第一互连结构中的第二金属焊盘，其中第一通孔和第二通孔电连接。

    Image Sensor Device and Method
    8.
    发明申请
    Image Sensor Device and Method 有权
    图像传感器装置及方法

    公开(公告)号：US20130285179A1

    公开(公告)日：2013-10-31

    申请号：US13457301

    申请日：2012-04-26

    申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

    发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689

    摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

    摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。 间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。 也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。

    Image sensor device and method
    9.
    发明授权
    Image sensor device and method 有权
    图像传感器装置及方法

    公开(公告)号：US09224770B2

    公开(公告)日：2015-12-29

    申请号：US13457301

    申请日：2012-04-26

    申请人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

    发明人： Jeng-Shyan Lin ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Feng-Chi Hung ,  Shuang-Ji Tsai

    IPC分类号： H01L31/0203 ,  H01L27/146

    CPC分类号： H01L27/14685 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689

    摘要： A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

    摘要翻译： 提供了一种用于减少感光二极管之间串扰的系统和方法。 在一个实施例中，在第一感光二极管上形成第一滤色器，并且在第二感光二极管上形成第二滤色器，并且在第一滤色器和第二滤色器之间形成间隙。 间隙将用于反射否则将从第一滤色器过渡到第二滤色器的光，从而减少第一光敏二极管和第二感光二极管之间的串扰。 也可以在第一感光二极管和第二感光二极管之间形成反射栅格，以帮助反射并进一步减少串扰量。