摘要:
A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要:
A short pulse rejection circuit may include an edge detector, a filter circuit, a comparison circuit, and a gating circuit. The edge detector may delay an input signal to generate a delayed input signal, and detect an edge of the input signal to generate an edge detection signal. The filter circuit may perform a low pass filtering on the edge detection signal to generate a first signal. The comparison circuit may compare the first signal with a reference voltage. The gating circuit may gate the delayed input signal based on an output signal of the comparison circuit. Therefore, the short pulse rejection circuit may have a sufficient setup/hold time margin of a flip-flop, and may sample an input signal even when a state of the input signal does not change during an initial operation.
摘要:
A short pulse rejection circuit may include an edge detector, a filter circuit, a comparison circuit, and a gating circuit. The edge detector may delay an input signal to generate a delayed input signal, and detect an edge of the input signal to generate an edge detection signal. The filter circuit may perform a low pass filtering on the edge detection signal to generate a first signal. The comparison circuit may compare the first signal with a reference voltage. The gating circuit may gate the delayed input signal based on an output signal of the comparison circuit. Therefore, the short pulse rejection circuit may have a sufficient setup/hold time margin of a flip-flop, and may sample an input signal even when a state of the input signal does not change during an initial operation.