公开(公告)号：US06593602B2

公开(公告)日：2003-07-15

申请号：US09940713

申请日：2001-08-27

申请人： Ji Hao Liang ,  Yoshihiro Ogawa ,  Ken Sasakura ,  Tsuyoshi Maruyama

发明人： Ji Hao Liang ,  Yoshihiro Ogawa ,  Ken Sasakura ,  Tsuyoshi Maruyama

IPC分类号： H01L310328

CPC分类号： H01L33/0045 ,  H01L33/24

摘要： A substrate has first and second edges disposed in parallel and a principal surface connecting the first and second edges. An active layer is formed on the principal surface. A ridge-like region is disposed on the active layer along a path interconnecting a point on the first edge and a point on the second edge. The ridge-like region is made of semiconductor material having a refraction index smaller than a refraction index of the active layer, and defines a waveguide. The path is disposed along the principal surface and includes a first region on the side of the first edge and a second region on the side of the second edge. A first angle is taken between a normal to the first edge directing toward the principal surface and the first region. A second angle smaller than the first angle is taken between a normal to the second edge directing toward the principal surface and the second region. Electrodes inject current in a region of the active layer along the path.

公开(公告)号：US06520670B2

公开(公告)日：2003-02-18

申请号：US09938324

申请日：2001-08-23

申请人： Ji Hao Liang ,  Kazuhisa Ishii ,  Tsuyoshi Maruyama

发明人： Ji Hao Liang ,  Kazuhisa Ishii ,  Tsuyoshi Maruyama

IPC分类号： H01L2331

CPC分类号： H01L33/58 ,  F21V5/002 ,  H01L2933/0091 ,  Y10S362/80

摘要： A light diffusion sheet receives light fluxes radiated from a light radiating element at a first plane of the light diffusion sheet and scatters or diffracts the received light fluxes, and radiates the scattered or diffracted light from an opposite second plane. A light distributing member distributes the light radiated from the second plane of the light diffusion sheet along some direction. A light radiating device is provided which has a relatively large light beam spot.

公开(公告)号：US20050145857A1

公开(公告)日：2005-07-07

申请号：US11067190

申请日：2005-02-24

申请人： Tsuyoshi Maruyama ,  Kazuhisa Ishii ,  Ken Sasakura ,  Shotaro Tomita ,  Keizo Kawaguchi ,  Toshio Tomiyoshi

发明人： Tsuyoshi Maruyama ,  Kazuhisa Ishii ,  Ken Sasakura ,  Shotaro Tomita ,  Keizo Kawaguchi ,  Toshio Tomiyoshi

IPC分类号： H01L33/06 ,  H01L33/16 ,  H01L33/22 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01L33/30

摘要： The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

摘要翻译： 由III-V族化合物半导体材料制成的衬底的主表面为（100）面。 发光层叠结构设置在主表面上。 在发光层叠结构中，量子阱层被由具有比量子阱层的半导体材料宽的带隙的半导体材料制成的一对载流子限制层夹在中间。 一对载流子限制层被由具有比载流子限制层的半导体材料的带隙宽的带隙的半导体材料制成的一对覆盖层夹在中间。 量子阱层和载流子限制层的厚度以及其半导体材料的组成被设定为使得电子和空穴的发光复合发生在量子阱层而不是在载流子限制层中。

公开(公告)号：US06900467B2

公开(公告)日：2005-05-31

申请号：US10664659

申请日：2003-09-17

申请人： Tsuyoshi Maruyama ,  Kazuhisa Ishii ,  Ken Sasakura ,  Shotaro Tomita ,  Keizo Kawaguchi ,  Toshio Tomiyoshi

发明人： Tsuyoshi Maruyama ,  Kazuhisa Ishii ,  Ken Sasakura ,  Shotaro Tomita ,  Keizo Kawaguchi ,  Toshio Tomiyoshi

IPC分类号： H01L33/06 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L33/06

摘要： The principal surface of a substrate made of group III-V compound semiconductor is about (100) plane. A light emitting lamination structure is disposed on the principal surface. The light emitting lamination structure includes a quantum well layer made of group III-V mixed crystal semiconductor containing In, a pair of carrier confinement layers made of semiconductor material having a band gap wider than the quantum well layer and sandwiching the quantum well layer, and a pair of clad layers made of semiconductor material having a band gap wider than the carrier confinement layers and sandwiching the quantum well layer and the carrier confinement layers. A difference of 100 meV or larger exists between an energy level of the carrier confinement layers at a conduction band lower end and a ground level of an electron in the quantum well layer.

摘要翻译： 由III-V族化合物半导体制成的基片的主表面为（100）面。 发光层叠结构设置在主表面上。 发光层压结构包括由含有In的III-V族混合晶体半导体制成的量子阱层，由具有宽于量子阱层的带隙并夹持量子阱层的半导体材料制成的一对载流子限制层，以及 一对由半导体材料制成的覆盖层，其具有比载流子限制层宽的带隙，并夹持量子阱层和载流子限制层。 在导带下端的载流子限制层的能级和量子阱层中的电子的地平面之间存在100meV或更大的差异。

公开(公告)号：US07084422B2

公开(公告)日：2006-08-01

申请号：US11067190

申请日：2005-02-24

申请人： Tsuyoshi Maruyama ,  Kazuhisa Ishii ,  Ken Sasakura ,  Shotaro Tomita ,  Keizo Kawaguchi ,  Toshio Tomiyoshi

发明人： Tsuyoshi Maruyama ,  Kazuhisa Ishii ,  Ken Sasakura ,  Shotaro Tomita ,  Keizo Kawaguchi ,  Toshio Tomiyoshi

IPC分类号： H01L29/006

CPC分类号： B82Y20/00 ,  H01L33/06 ,  H01L33/30

摘要： The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a quantum well layer is sandwiched by a pair of carrier confinement layers made of a semiconductor material having a band gap wider than a semiconductor material of the quantum well layer. The pair of carrier confinement layers are sandwiched by a pair of clad layers made of a semiconductor material having a band gap wider than the band gap of the semiconductor material of the carrier confinement layers. Thicknesses of the quantum well layer and the carrier confinement layers, as well as compositions of the semiconductor materials thereof, are set such that light emission recombination of electrons and holes occurs in the quantum well layer and not in the carrier confinement layers.

摘要翻译： 由III-V族化合物半导体材料制成的衬底的主表面为（100）面。 发光层叠结构设置在主表面上。 在发光层叠结构中，量子阱层被由具有比量子阱层的半导体材料宽的带隙的半导体材料制成的一对载流子限制层夹在中间。 一对载流子限制层被由具有比载流子限制层的半导体材料的带隙宽的带隙的半导体材料制成的一对覆盖层夹在中间。 量子阱层和载流子限制层的厚度以及其半导体材料的组成被设定为使得电子和空穴的发光复合发生在量子阱层而不是在载流子限制层中。

公开(公告)号：US09485807B2

公开(公告)日：2016-11-01

申请号：US12737930

申请日：2009-08-31

申请人： Minoru Uchida ,  Tsuyoshi Maruyama

发明人： Minoru Uchida ,  Tsuyoshi Maruyama

IPC分类号： A47J31/00 ,  F24H1/10 ,  H05B3/10 ,  F24H1/12 ,  F24H1/16

CPC分类号： H05B3/10 ,  F24H1/101 ,  F24H1/121 ,  F24H1/162 ,  F24H9/0015 ,  F24H2250/14

摘要： Provided is a liquid heating apparatus capable of heating fluid such as peroxosulfuric acid solution to high temperature in a short time. The heating apparatus includes: a flow channel member forming a flow channel 4 allowing liquid to flow and having flow channel thickness of 10 mm or smaller, the flow channel member composed of material transmitting near-infrared rays; and a near-infrared heaters 7, 8 placed over the outside of at least one of opposite flow channel surfaces of the flow channel and heating the liquid in the flow channel. The liquid flowing through the flow channel is instantaneously and evenly heated using near-infrared rays. It is preferable that spacers 6 be further provided within the flow channel 4 in order to limit the volume of the flow channel. Since not only the residence time in the heating apparatus can be shortened but the possible largest heat transfer area can be also maintained by decreasing the volume of the flow channel of the heating apparatus and by increasing the flow velocity in the heating apparatus, it is possible to increase the temperature of liquid to be heated to high temperature in a very short time even if the preset temperature of heat transfer surfaces is low.

摘要翻译： 本发明提供能够在短时间内将过氧硫酸溶液等液体加热至高温的液体加热装置。 加热装置包括：流路构件，其形成允许液体流动并具有10mm以下的流路厚度的流路4，所述流路构件由透射近红外线的材料构成; 以及放置在流动通道的相对流动通道表面中的至少一个外侧的近红外加热器7,8，并加热流动通道中的液体。 流过流道的液体使用近红外线瞬时均匀地加热。 为了限制流路的体积，优选在流路4内进一步设置间隔件6。 由于不仅可以缩短加热装置中的停留时间，还可以通过减小加热装置的流路的体积和通过增加加热装置中的流速来维持可能的最大的传热面积， 即使传热面的预设温度低，也可以在非常短的时间内将待加热的液体的温度增加到高温。

公开(公告)号：US08903261B2

公开(公告)日：2014-12-02

申请号：US13414660

申请日：2012-03-07

申请人： Tsuyoshi Maruyama ,  Katsumi Inukai

发明人： Tsuyoshi Maruyama ,  Katsumi Inukai

IPC分类号： G03G15/20

CPC分类号： G03G15/2039

摘要： A heating apparatus includes a switching circuit configured to switch on/off current-feeding from an AC power source to the heater, a temperature detector configured to detect a temperature of the heater, and a current-feed controller configured to execute a first current-feed mode of changing a current-feed ratio of current-feeding time to unit time by controlling switching of the switching circuit so that the temperature detected by the temperature detector falls within a target range. The current-feed controller executes a second current-feed mode of fixing the current-feed ratio to almost 100% or almost 0% during execution of the first current-feed mode in place of the first current-feed mode.

摘要翻译： 一种加热装置，包括：开关电路，被配置为从AC电源向加热器供电;将配置为检测加热器的温度的温度检测器以及配置为执行第一电流馈送控制器的电流馈送控制器， 通过控制切换电路的切换使得由温度检测器检测到的温度落在目标范围内，将供电时间的电流进给比改变为单位时间的进给模式。 电流馈送控制器执行第二电流馈送模式，以在执行第一电流馈送模式期间将电流馈送比固定为几乎100％或几乎为0％，代替第一电流馈送模式。

公开(公告)号：US08391728B2

公开(公告)日：2013-03-05

申请号：US12727757

申请日：2010-03-19

申请人： Tsuyoshi Maruyama ,  Masahito Hamaya ,  Katsumi Inukai

发明人： Tsuyoshi Maruyama ,  Masahito Hamaya ,  Katsumi Inukai

IPC分类号： G03G15/00

CPC分类号： G03G15/0283 ,  G03G15/5004

摘要： An image forming apparatus includes a voltage applying unit for applying a voltage to an electric load; a sub control unit for controlling the voltage applying unit; a restarting unit for restarting the sub control unit in response to receipt of a restart signal; a determining unit for determining whether or not a restart of the sub control unit is an abnormal restart; and a main control unit. The main control unit generates a control start signal for allowing the voltage applying unit to start generation of the voltage, and the restart signal. When the determining unit determines that the restart of the sub control unit is an abnormal restart, the main control unit sends again the control start signal to the sub control unit.

摘要翻译： 图像形成装置包括：电压施加单元，用于向电负载施加电压; 子控制单元，用于控制电压施加单元; 重启单元，用于响应接收到重启信号重新启动子控制单元; 确定单元，用于确定子控制单元的重新启动是否是异常重启; 和主控制单元。 主控制单元产生用于允许电压施加单元开始产生电压的控制开始信号和重启信号。 当确定单元确定副控制单元的重新启动是异常重启时，主控制单元再次发送控制开始信号给子控制单元。

公开(公告)号：US08259353B2

公开(公告)日：2012-09-04

申请号：US12426977

申请日：2009-04-21

申请人： Masahito Hamaya ,  Tsuyoshi Maruyama

发明人： Masahito Hamaya ,  Tsuyoshi Maruyama

IPC分类号： H04N1/60

CPC分类号： H04N1/00885 ,  H04N1/00904 ,  H04N1/00909 ,  H04N1/2346 ,  H04N1/295

摘要： An image forming apparatus is provided. A first cleaning unit is configured to collect a particle deposited on an object. An applying unit is configured to apply a voltage to the first cleaning unit. A first detector is configured to detect a first current flowing between the first cleaning unit and the object. A controller is configured to control the applying unit. When the detected first current becomes equal to or greater than a first predetermined value, the controller controls the applying unit to reduce the voltage applied to the first cleaning unit so as to make the first current smaller than the first predetermined value.

摘要翻译： 提供一种图像形成装置。 第一清洁单元构造成收集沉积在物体上的颗粒。 施加单元被配置为向第一清洁单元施加电压。 第一检测器被配置为检测在第一清洁单元和物体之间流动的第一电流。 控制器被配置为控制施加单元。 当检测到的第一电流变为等于或大于第一预定值时，控制器控制施加单元以减小施加到第一清洁单元的电压，使得第一电流小于第一预定值。

公开(公告)号：US08249473B2

公开(公告)日：2012-08-21

申请号：US12606270

申请日：2009-10-27

申请人： Tsuyoshi Maruyama

发明人： Tsuyoshi Maruyama

IPC分类号： G03G15/00 ,  G03G15/16 ,  G03G21/00

CPC分类号： G03G15/168 ,  G03G2215/1661

摘要： An image forming apparatus includes: a carrier configured to carry developer; a voltage applying unit configured to apply a voltage to the carrier so that a carrier current flows from the voltage applying unit through the carrier; and a current detecting unit configured to detect the carrier current. The current detecting unit detects the carrier current at an uncharged portion of the carrier.

摘要翻译： 图像形成装置包括：承载构造成承载显影剂的载体; 电压施加单元，被配置为向所述载体施加电压，使得载流子电流从所述电压施加单元通过所述载体流动; 以及电流检测单元，被配置为检测载波电流。 电流检测单元检测载体的未充电部分的载流子电流。