-
1.
公开(公告)号:US07756211B2
公开(公告)日:2010-07-13
申请号:US11219921
申请日:2005-09-06
申请人: Ji-Hyung Kim , Dae-Sik Hong , Dong-Jun Lee , Jong-Han Kim , Byung-Jun Park , Jong-Ae Park
发明人: Ji-Hyung Kim , Dae-Sik Hong , Dong-Jun Lee , Jong-Han Kim , Byung-Jun Park , Jong-Ae Park
IPC分类号: H04B7/02
CPC分类号: H04B7/0842 , H04B7/04 , H04B7/0851
摘要: A channel estimation method in a Multiple Input Multiple Output (MIMO) mobile communication system having a plurality of transmission antennas and a plurality of reception antennas is provided. In a method of transmitting, by a transmitter, channel estimation signals for channel estimation at a receiver, the transmission antennas transmit the same channel estimation signals for a first frame transmission duration, and transmit predetermined channel estimation signals corresponding to the number of the transmission antennas for a second frame transmission duration.
摘要翻译: 提供了具有多个发送天线和多个接收天线的多输入多输出(MIMO)移动通信系统中的信道估计方法。 在发射机发送信道估计信号的方法中,发送天线在第一帧传输持续时间内传输相同的信道估计信号,并发送对应于发送天线数量的预定信道估计信号 用于第二帧传输持续时间。
-
2.
公开(公告)号:US20060050802A1
公开(公告)日:2006-03-09
申请号:US11219921
申请日:2005-09-06
申请人: Ji-Hyung Kim , Dae-Sik Hong , Dong-Jun Lee , Jong-Han Kim , Byung-Jun Park , Jong-Ae Park
发明人: Ji-Hyung Kim , Dae-Sik Hong , Dong-Jun Lee , Jong-Han Kim , Byung-Jun Park , Jong-Ae Park
IPC分类号: H04B7/02
CPC分类号: H04B7/0842 , H04B7/04 , H04B7/0851
摘要: A channel estimation method in a Multiple Input Multiple Output (MIMO) mobile communication system having a plurality of transmission antennas and a plurality of reception antennas is provided. In a method of transmitting, by a transmitter, channel estimation signals for channel estimation at a receiver, the transmission antennas transmit the same channel estimation signals for a first frame transmission duration, and transmit predetermined channel estimation signals corresponding to the number of the transmission antennas for a second frame transmission duration.
摘要翻译: 提供了具有多个发送天线和多个接收天线的多输入多输出(MIMO)移动通信系统中的信道估计方法。 在发射机发送信道估计信号的方法中,发送天线在第一帧传输持续时间内传输相同的信道估计信号,并发送对应于发送天线数量的预定信道估计信号 用于第二帧传输持续时间。
-
公开(公告)号:US11638736B2
公开(公告)日:2023-05-02
申请号:US17350751
申请日:2021-06-17
申请人: Byung-Jun Park
发明人: Byung-Jun Park
IPC分类号: A61K36/65 , A61K36/74 , A61K36/284 , A61K36/076 , A61K36/234 , A61P25/16 , A61K36/54 , A61K36/258 , A61K36/484 , A61K36/67 , A61K36/48 , A61K36/725
摘要: Provided herein are compositions for treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, pharmaceutical compositions comprising the compositions and pharmaceutically acceptable excipients, and nutraceutical compositions comprising the compositions and nutraceutically acceptable excipients. Provided also herein are methods of treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject in need thereof, methods of reducing, alleviating, or delaying a sign or a symptom of a disorder characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject in need thereof, and methods of regulating inflammation, antioxidant enzymes, and apoptosis in a subject having a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage.
-
公开(公告)号:US11045516B2
公开(公告)日:2021-06-29
申请号:US16653596
申请日:2019-10-15
申请人: Byung-Jun Park
发明人: Byung-Jun Park
IPC分类号: A61K36/65 , A61K36/74 , A61K36/284 , A61K36/076 , A61K36/234 , A61P25/16 , A61K36/54 , A61K36/258 , A61K36/484 , A61K36/67 , A61K36/48 , A61K36/725
摘要: Provided herein are compositions for treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, pharmaceutical compositions comprising the compositions and pharmaceutically acceptable excipients, and pharmaceutical formulations comprising the compositions. Provided also herein are methods of treating a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage in a subject, and methods of regulating inflammation, antioxidant enzymes, and apoptosis in a subject having a disorder or a disease associated with or characterized by neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage.
-
公开(公告)号:US20120091515A1
公开(公告)日:2012-04-19
申请号:US13180898
申请日:2011-07-12
申请人: Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
发明人: Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
IPC分类号: H01L31/0224 , H01L23/48 , H01L31/0232
CPC分类号: H01L27/14636 , H01L27/14603 , H01L27/14618 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L2224/13 , H04N5/2253 , H04N5/2254
摘要: A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.
摘要翻译: 半导体衬底包括在支撑衬底上的光电二极管。 在支撑基板和半导体基板之间设置绝缘层。 第一导电图案设置在绝缘层中。 第一穿透电极穿透支撑衬底以与第一导电图案接触。
-
公开(公告)号:US08043927B2
公开(公告)日:2011-10-25
申请号:US12457773
申请日:2009-06-22
申请人: Byung-Jun Park , Tae-Hun Lee , Seung-Hun Shin
发明人: Byung-Jun Park , Tae-Hun Lee , Seung-Hun Shin
IPC分类号: H01L21/76
CPC分类号: H01L27/14683 , H01L27/1463 , H01L27/1464 , Y10S438/975
摘要: In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer.
摘要翻译: 在制造互补金属氧化物半导体(CMOS)图像传感器(CIS)的方法中,可以在包括芯片区域和划线区域的第一基板上形成外延层。 可以通过将第一杂质注入到外延层中而与第一衬底相邻地形成第一杂质层。 可以在芯片区域上的外延层中形成光电二极管。 电连接到光电二极管的电路元件可以形成在外延层上。 可以在外延层上形成保护电路元件的保护层。 第二基底可以附着在保护层上。 可以去除第一衬底以暴露外延层。 可以使用第一杂质层作为对准键,在暴露的外延层上形成滤色器层。 可以在滤色器层上形成微透镜。
-
公开(公告)号:US20090085143A1
公开(公告)日:2009-04-02
申请号:US12285148
申请日:2008-09-30
申请人: Byung-Jun Park
发明人: Byung-Jun Park
IPC分类号: H01L27/146 , B44C1/22
CPC分类号: H01L27/14603 , H01L27/14636 , H01L27/1464 , H01L27/14683
摘要: Image sensors and methods of fabricating the same are provided. An image sensor may include a substrate, a first pad provided on a front side of the substrate, a second pad provided on a backside of the substrate, one or more contacts, each of the contacts passing through the substrate and electrically connecting the first pad with the second pad, and one or more guard rings, each of the guard rings surrounding one or more contacts and having insulating characteristics.
摘要翻译: 提供了图像传感器及其制造方法。 图像传感器可以包括基板,设置在基板的前侧上的第一焊盘,设置在基板的背面上的第二焊盘,一个或多个触点,每个触点穿过基板并电连接第一焊盘 与第二焊盘和一个或多个保护环,每个保护环围绕一个或多个触点并具有绝缘特性。
-
公开(公告)号:US07411173B2
公开(公告)日:2008-08-12
申请号:US11447411
申请日:2006-06-06
申请人: Byung-Jun Park
发明人: Byung-Jun Park
IPC分类号: H01L31/00
CPC分类号: H01L27/14643 , H01L27/14603 , H01L27/1463 , H01L27/14689
摘要: An image sensor is provided. The image sensor includes a photodiode disposed in a semiconductor substrate and a first device isolating layer formed having an impurity with a conductivity type in the semiconductor substrate adjacent to the photodiode. The image sensor further includes a second device isolating layer composed of an insulating layer that covers the first device isolating layer. In addition, the image sensor further includes an interlayer insulating layer formed on the second device isolating layer and which is composed of a material with refractivity greater than that of the second device isolating layer.
摘要翻译: 提供图像传感器。 图像传感器包括设置在半导体衬底中的光电二极管和在半导体衬底中邻近光电二极管形成具有导电类型杂质的第一器件隔离层。 图像传感器还包括由覆盖第一器件隔离层的绝缘层构成的第二器件隔离层。 此外,图像传感器还包括形成在第二器件隔离层上并由折射率大于第二器件隔离层的折射率的材料构成的层间绝缘层。
-
公开(公告)号:US20070196947A1
公开(公告)日:2007-08-23
申请号:US11706371
申请日:2007-02-15
申请人: Gil-Sang Yoo , Byung-Jun Park
发明人: Gil-Sang Yoo , Byung-Jun Park
IPC分类号: H01L21/00
CPC分类号: H01L27/14687
摘要: A method of fabricating an image sensor which reduces fabricating costs through simultaneous formation of capacitor structures and contact structures may be provided. The method may include forming a lower electrode on a substrate, forming an interlayer insulating film on the substrate, the interlayer insulating film may have a capacitor hole to expose a first portion of the lower electrode. The method may further include forming a dielectric film on at least the first portion of the lower electrode, forming a first contact hole in the interlayer insulating film to expose a second portion of the lower electrode, forming a first conductive layer in at least the first contact hole and the capacitor hole, forming a second conductive layer on the first conductive layer to fill and cover the capacitor hole and the first contact hole, and planarizing the second conductive layer to simultaneously form a capacitor plug in the capacitor hole, a first contact plug in the first contact hole, an upper electrode beneath the capacitor plug, and a first contact barrier film beneath the first contact plug.
摘要翻译: 可以提供制造图像传感器的方法,该图像传感器通过同时形成电容器结构和接触结构来降低制造成本。 该方法可以包括在基板上形成下电极,在基板上形成层间绝缘膜,层间绝缘膜可以具有电容器孔,露出下电极的第一部分。 所述方法还可以包括在所述下电极的至少第一部分上形成电介质膜,在所述层间绝缘膜中形成第一接触孔,以暴露所述下电极的第二部分,形成至少第一导电层的第一导电层 接触孔和电容器孔,在第一导电层上形成第二导电层,以填充和覆盖电容器孔和第一接触孔,并且平坦化第二导电层以同时在电容器孔中形成电容器插头,第一接触 插入第一接触孔,电容器插头下方的上电极和第一接触插塞下方的第一接触阻挡膜。
-
公开(公告)号:US20070085128A1
公开(公告)日:2007-04-19
申请号:US11608672
申请日:2006-12-08
申请人: Dong-Sauk KIM , Ho-Seok Lee , Byung-Jun Park , Il-Young Kwon , Jong-Min Lee , Hyeong-Soo Kim , Jin-Woong Kim , Hyung-Bok Choi , Dong-Woo Shin
发明人: Dong-Sauk KIM , Ho-Seok Lee , Byung-Jun Park , Il-Young Kwon , Jong-Min Lee , Hyeong-Soo Kim , Jin-Woong Kim , Hyung-Bok Choi , Dong-Woo Shin
IPC分类号: H01L29/76
CPC分类号: H01L27/10855 , H01L27/0207 , H01L27/10814
摘要: Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.
摘要翻译: 公开了半导体装置及其制造方法,其能够通过扩大有效的电容器面积来形成下部电极并且通过扩大电容器的足够的电容来防止由倾斜或提升现象引起的较短的下部电极。 本发明的半导体器件包括:以有序的间隔距离设置的多个电容器插头; 以及多个用于电容器的下电极,并且以与电容器插头分别连接的有序分隔距离设置。
-
-
-
-
-
-
-
-
-