利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

79 条记录 (耗时 0.037 秒)

    Method of manufacturing driving-device for unit pixel of organic light emitting display
    1.
    发明授权
    Method of manufacturing driving-device for unit pixel of organic light emitting display 有权
    制造有机发光显示单元像素的驱动装置的方法

    公开(公告)号：US07648866B2

    公开(公告)日：2010-01-19

    申请号：US11958719

    申请日：2007-12-18

    申请人： Ji-sim Jung ,  Jung-seok Hahn ,  Sang-yoon Lee ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

    发明人： Ji-sim Jung ,  Jung-seok Hahn ,  Sang-yoon Lee ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/3262

    摘要： Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes. The method includes: forming an amorphous silicon layer including a first amorphous region and a second amorphous region disposed on the same plane of a substrate; forming an SAM (self-assembled monolayer) having a hydrophobic property on the first amorphous region; coating an aqueous solution in which nickel particles are dispersed, on the second amorphous region and the SAM, wherein a larger amount of nickel particles than on the SAM are dispersed on the second amorphous region using a hydrophilicity difference between the second amorphous region and the SAM; vaporizing the SAM through an annealing process and simultaneously performing metal induced crystallization in which the nanoparticles are used as a medium, to crystallize the first and second amorphous regions and to form first and second crystallization regions; patterning the first and second crystallization regions to form first and second channel regions; and forming first and second electrodes on the first and second channel regions.

    摘要翻译： 提供一种制造有机发光显示器的单位像素的驱动装置的方法，该有机发光显示器具有改进的制造工艺，其中驱动装置可以以较少的工艺和更简单的工艺制造。 该方法包括：形成包括设置在基板的同一平面上的第一非晶区和第二非晶区的非晶硅层; 在第一非晶区上形成具有疏水性的SAM（自组装单层）; 在所述第二非晶区域和所述SAM上涂覆其中分散有镍颗粒的水溶液，其中比所述SAM上更大量的所述镍颗粒分散在所述第二非晶区域上，使用所述第二非晶区域和所述SAM之间的亲水性差异 ; 通过退火工艺蒸发SAM，同时进行金属诱导结晶，其中纳米颗粒用作介质，使第一和第二非晶区域结晶并形成第一和第二结晶区域; 图案化第一和第二结晶区域以形成第一和第二通道区域; 以及在所述第一和第二通道区域上形成第一和第二电极。

    Transistor, method of fabricating the same and organic light emitting display including the transistor
    5.
    发明授权
    Transistor, method of fabricating the same and organic light emitting display including the transistor 有权
    晶体管，其制造方法和包括该晶体管的有机发光显示器

    公开(公告)号：US08058094B2

    公开(公告)日：2011-11-15

    申请号：US12707115

    申请日：2010-02-17

    申请人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

    发明人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

    IPC分类号： H01L21/00

    CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

    摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

    摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

    Method of manufacturing laterally crystallized semiconductor layer and method of manufacturing thin film transistor using the same method
    6.
    发明授权
    Method of manufacturing laterally crystallized semiconductor layer and method of manufacturing thin film transistor using the same method 有权
    使用相同的方法制造横向结晶的半导体层的方法和制造薄膜晶体管的方法

    公开(公告)号：US07682950B2

    公开(公告)日：2010-03-23

    申请号：US11852774

    申请日：2007-09-10

    申请人： Kyung-bae Park ,  Kyung-yeup Kim ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

    发明人： Kyung-bae Park ,  Kyung-yeup Kim ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

    IPC分类号： H01L21/02

    CPC分类号： H01L21/268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L27/1285

    摘要： Provided are a method of manufacturing a laterally crystallized semiconductor layer and a method of manufacturing a thin film transistor (TFT) using the method. The method of manufacturing the laterally crystallized semiconductor layer comprises: forming a semiconductor layer on a substrate; irradiating laser beams on the semiconductor layer; splitting the laser beams using a prism sheet comprising an array of a plurality of prisms, advancing the laser beams toward the semiconductor layer to alternately form first and second areas in the semiconductor layer so as to fully melt the first areas, wherein the laser beams are irradiated onto the first areas, and the laser beams are not irradiated onto the second areas; and inducing the first areas to be laterally crystallized using the second areas as seeds.

    摘要翻译： 提供了制造横向结晶半导体层的方法和使用该方法制造薄膜晶体管（TFT）的方法。 制造横向结晶的半导体层的方法包括：在衬底上形成半导体层; 在半导体层上照射激光束; 使用包括多个棱镜的阵列的棱镜片分割激光束，将激光束朝向半导体层前进，以在半导体层中交替地形成第一和第二区域，以便使第一区域完全熔化，其中激光束 照射到第一区域上，激光束不照射到第二区域上; 并且使用第二区域作为种子诱导第一区域被横向结晶。

    Method of manufacturing ZnO-based thin film transistor
    8.
    发明授权
    Method of manufacturing ZnO-based thin film transistor 有权
    制造ZnO基薄膜晶体管的方法

    公开(公告)号：US07682882B2

    公开(公告)日：2010-03-23

    申请号：US12153674

    申请日：2008-05-22

    申请人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    发明人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869

    摘要： Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

    摘要翻译： 提供了一种制造ZnO基薄膜晶体管（TFT）的方法。 该方法可以包括使用一个或两个湿蚀刻来形成源极和漏极。 对于等离子体具有相对稳定的结合能的锡（Sn）氧化物，氟化物或氯化物可以包括在通道层中。 因为源电极和漏电极是通过湿蚀刻形成的，所以可以防止或减少对沟道层的损伤和氧空位。 因为具有较高结合能的材料分布在沟道层中，所以可以防止或减少在形成钝化层时对沟道层的损坏。

    Organic electro-luminescent display and method of fabricating the same
    9.
    发明授权
    Organic electro-luminescent display and method of fabricating the same 有权
    有机电致发光显示器及其制造方法

    公开(公告)号：US08405072B2

    公开(公告)日：2013-03-26

    申请号：US12855807

    申请日：2010-08-13

    申请人： Ji-sim Jung ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

    发明人： Ji-sim Jung ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

    IPC分类号： H01L35/24 ,  H01L29/04

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/3244

    摘要： An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

    摘要翻译： 有机电致发光显示器及其制造方法包括有机发光二极管，驱动有机发光二极管的驱动晶体管和控制驱动晶体管的操作的开关晶体管，其中开关的有源层 并且使用具有不同密度的硅化物使驱动晶体管结晶，使得驱动晶体管的有源层具有比开关层的有源层更大的晶粒尺寸。

    Method of manufacturing thin film transistor having lightly doped drain regions
    10.
    发明授权
    Method of manufacturing thin film transistor having lightly doped drain regions 有权
    制造具有轻掺杂漏极区的薄膜晶体管的方法

    公开(公告)号：US07871872B2

    公开(公告)日：2011-01-18

    申请号：US11876650

    申请日：2007-10-22

    申请人： Jong-man Kim ,  Kyung-bae Park ,  Jang-yeon Kwon ,  Ji-sim Jung

    发明人： Jong-man Kim ,  Kyung-bae Park ,  Jang-yeon Kwon ,  Ji-sim Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L29/78621 ,  H01L29/66757

    摘要： Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.

    摘要翻译： 提供一种制造薄膜晶体管的方法，该方法包括：在衬底上形成非晶硅层; 通过使非晶硅层结晶而形成多晶硅层; 形成掩模所述多晶硅的一部分的掩模结构; 在所述多晶硅层中形成源极和漏极区域以及介于所述源极和漏极区域之间的沟道区域; 使用离子束注入将具有第一浓度的杂质注入未被掩模结构覆盖的多晶硅层的一端和另一端。 然后对其上具有掩模的多晶硅层的端部进行离子轰击以增加源极和漏极区域中的杂质的水平，同时缩小掩模区域的尺寸。