公开(公告)号：US08058094B2

公开(公告)日：2011-11-15

申请号：US12707115

申请日：2010-02-17

申请人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

发明人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

IPC分类号： H01L21/00

CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

公开(公告)号：US07919777B2

公开(公告)日：2011-04-05

申请号：US12566106

申请日：2009-09-24

申请人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

发明人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L29/04

CPC分类号： H01L29/78678 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region.

摘要翻译： 相对简单且容易地形成具有大晶粒尺寸的多晶沟道区的底栅薄膜晶体管（“TFT”）的制造方法。 制造底栅极薄膜晶体管的方法包括在衬底上形成底栅电极，在衬底上形成栅极绝缘层以覆盖底栅电极，形成非晶半导体层，N型半导体层和电极 依次在栅极绝缘层上蚀刻形成在底栅电极上的电极区域和N型半导体层区域，以暴露非晶半导体层区域，使用激光退火法熔化非晶半导体层区域，并使 熔融的非晶半导体层区域以形成横向生长的多晶沟道区域。

公开(公告)号：US20080258140A1

公开(公告)日：2008-10-23

申请号：US11978581

申请日：2007-10-30

申请人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

发明人： Eun-ha Lee ,  Dong-hun Kang ,  Jae-cheol Lee ,  Chang-jung Kim ,  Hyuck Lim

IPC分类号： H01L29/04 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675

摘要： Provided are a thin film transistor (TFT) including a selectively crystallized channel layer, and a method of manufacturing the TFT. The TFT includes a gate, the channel layer, a source, and a drain. The channel layer is formed of an oxide semiconductor, and at least a portion of the channel layer contacting the source and the drain is crystallized. In the method of manufacturing the TFT, the channel layer is formed of an oxide semiconductor, and a metal component is injected into the channel layer so as to crystallize at least a portion of the channel layer contacting the source and the drain. The metal component can be injected into the channel layer by depositing and heat-treating a metal layer or by ion-implantation.

摘要翻译： 提供了包括选择性晶化的沟道层的薄膜晶体管（TFT）和制造TFT的方法。 TFT包括栅极，沟道层，源极和漏极。 沟道层由氧化物半导体形成，并且与源极和漏极接触的沟道层的至少一部分结晶。 在制造TFT的方法中，沟道层由氧化物半导体形成，并且将金属成分注入到沟道层中，以便使与沟道层和漏极接触的沟道层的至少一部分结晶。 可以通过沉积和热处理金属层或通过离子注入将金属成分注入到沟道层中。

公开(公告)号：US20080038862A1

公开(公告)日：2008-02-14

申请号：US11819386

申请日：2007-06-27

申请人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans Cho

发明人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans Cho

IPC分类号： H01L21/64 ,  H01L31/0232

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02327

摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.

摘要翻译： 提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。 微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。 微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。 形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有 圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。 图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

公开(公告)号：US08541010B2

公开(公告)日：2013-09-24

申请号：US13023804

申请日：2011-02-09

申请人： Sung-Bo Shim ,  Byoung-Young Jeon ,  Joo-Hyuck Lim ,  Jong-Keun Choi ,  Yong-Joon Joo ,  Jin-Hun Cho

发明人： Sung-Bo Shim ,  Byoung-Young Jeon ,  Joo-Hyuck Lim ,  Jong-Keun Choi ,  Yong-Joon Joo ,  Jin-Hun Cho

IPC分类号： A61K8/02 ,  A61K36/00

CPC分类号： A61K8/90 ,  A61K8/0241 ,  A61K8/11 ,  A61K8/553 ,  A61K8/676 ,  A61K8/97 ,  A61K2800/412 ,  A61K2800/56 ,  A61Q19/00

摘要： Disclosed is a cosmetic composition having a double-shell type nano-structure. More particularly, the nano-structure of the cosmetic composition includes: a water-soluble bioactive ingredient core; a core shell containing poly(ethyleneglycol)-poly(caprolactone)-poly(ethyleneglycol) (PE-PCL-PEG) triblock copolymer in order to include the bioactive ingredient core therein; and an outer shell containing phospholipids or derivatives thereof in order to enclose the core shell therein. Such a cosmetic composition improves stability of active components which are prone to oxidation, light degradation, heat degradation, etc., is formed in a nanoparticle size which in turn shows high transdermal absorption and is very useful to prepare a cosmetic composition stably encapsulating various bioactive ingredients with anti-wrinkle effects, whitening effects, and so forth.

摘要翻译： 公开了具有双壳型纳米结构的化妆品组合物。 更具体地，化妆品组合物的纳米结构包括：水溶性生物活性成分核心; 包含聚（乙二醇） - 聚（己内酯） - 聚（乙二醇）（PE-PCL-PEG）三嵌段共聚物的核壳，以包括其中的生物活性成分核心; 以及含有磷脂或其衍生物的外壳，以便将核壳包围在其中。 这种化妆品组合物提高了易于氧化，光降解，热降解等的活性成分的稳定性，其纳米颗粒大小形成，其又显示高透皮吸收，并且非常有用于制备稳定地包封各种生物活性物质的化妆品组合物 具有抗皱效果，美白效果等的成分。

公开(公告)号：US08508009B2

公开(公告)日：2013-08-13

申请号：US12662607

申请日：2010-04-26

申请人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

发明人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

IPC分类号： H01L31/062 ,  H01L27/146 ,  H01L31/107

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02327

摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.

摘要翻译： 提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。 微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。 微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。 形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有 圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。 图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

公开(公告)号：US08187905B2

公开(公告)日：2012-05-29

申请号：US12805821

申请日：2010-08-20

申请人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

发明人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

IPC分类号： H01L31/062 ,  H01L31/107

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02327

摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.

摘要翻译： 提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。 微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。 微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。 形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有 圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。 图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

公开(公告)号：US20110008920A1

公开(公告)日：2011-01-13

申请号：US12805821

申请日：2010-08-20

申请人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

发明人： Huaxiang Yin ,  Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Hans S. Cho

IPC分类号： H01L33/00 ,  H01L31/18

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02327

摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.

摘要翻译： 提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。 微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。 微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。 形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有 圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。 图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。

公开(公告)号：US07700954B2

公开(公告)日：2010-04-20

申请号：US11621627

申请日：2007-01-10

申请人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

发明人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

公开(公告)号：US07629207B2

公开(公告)日：2009-12-08

申请号：US11692716

申请日：2007-03-28

申请人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

发明人： Hyuck Lim ,  Young-soo Park ,  Wenxu Xianyu ,  Young-kwan Cha

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/78678 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78684 ,  H01L29/78696

摘要： A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region.

摘要翻译： 相对简单且容易地形成具有大晶粒尺寸的多晶沟道区的底栅薄膜晶体管（“TFT”）的制造方法。 制造底栅极薄膜晶体管的方法包括在衬底上形成底栅电极，在衬底上形成栅极绝缘层以覆盖底栅电极，形成非晶半导体层，N型半导体层和电极 依次在栅极绝缘层上蚀刻形成在底栅电极上的电极区域和N型半导体层区域，以暴露非晶半导体层区域，使用激光退火法熔化非晶半导体层区域，并使 熔融的非晶半导体层区域以形成横向生长的多晶沟道区域。