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    Transistor, method of fabricating the same and organic light emitting display including the transistor
    1.
    发明授权
    Transistor, method of fabricating the same and organic light emitting display including the transistor 有权
    晶体管，其制造方法和包括该晶体管的有机发光显示器

    公开(公告)号：US08058094B2

    公开(公告)日：2011-11-15

    申请号：US12707115

    申请日：2010-02-17

    申请人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

    发明人： Takashi Noguchi ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung ,  Hyuck Lim

    IPC分类号： H01L21/00

    CPC分类号： H01L29/78645 ,  H01L27/1288 ,  H01L27/3244 ,  H01L29/78624 ,  H01L29/78696

    摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.

    摘要翻译： 晶体管包括： 至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近 并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

    Method of manufacturing laterally crystallized semiconductor layer and method of manufacturing thin film transistor using the same method
    5.
    发明授权
    Method of manufacturing laterally crystallized semiconductor layer and method of manufacturing thin film transistor using the same method 有权
    使用相同的方法制造横向结晶的半导体层的方法和制造薄膜晶体管的方法

    公开(公告)号：US07682950B2

    公开(公告)日：2010-03-23

    申请号：US11852774

    申请日：2007-09-10

    申请人： Kyung-bae Park ,  Kyung-yeup Kim ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

    发明人： Kyung-bae Park ,  Kyung-yeup Kim ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

    IPC分类号： H01L21/02

    CPC分类号： H01L21/268 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L27/1285

    摘要： Provided are a method of manufacturing a laterally crystallized semiconductor layer and a method of manufacturing a thin film transistor (TFT) using the method. The method of manufacturing the laterally crystallized semiconductor layer comprises: forming a semiconductor layer on a substrate; irradiating laser beams on the semiconductor layer; splitting the laser beams using a prism sheet comprising an array of a plurality of prisms, advancing the laser beams toward the semiconductor layer to alternately form first and second areas in the semiconductor layer so as to fully melt the first areas, wherein the laser beams are irradiated onto the first areas, and the laser beams are not irradiated onto the second areas; and inducing the first areas to be laterally crystallized using the second areas as seeds.

    摘要翻译： 提供了制造横向结晶半导体层的方法和使用该方法制造薄膜晶体管（TFT）的方法。 制造横向结晶的半导体层的方法包括：在衬底上形成半导体层; 在半导体层上照射激光束; 使用包括多个棱镜的阵列的棱镜片分割激光束，将激光束朝向半导体层前进，以在半导体层中交替地形成第一和第二区域，以便使第一区域完全熔化，其中激光束 照射到第一区域上，激光束不照射到第二区域上; 并且使用第二区域作为种子诱导第一区域被横向结晶。

    Organic electro-luminescent display and method of fabricating the same
    7.
    发明授权
    Organic electro-luminescent display and method of fabricating the same 有权
    有机电致发光显示器及其制造方法

    公开(公告)号：US08405072B2

    公开(公告)日：2013-03-26

    申请号：US12855807

    申请日：2010-08-13

    申请人： Ji-sim Jung ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

    发明人： Ji-sim Jung ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

    IPC分类号： H01L35/24 ,  H01L29/04

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/3244

    摘要： An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

    摘要翻译： 有机电致发光显示器及其制造方法包括有机发光二极管，驱动有机发光二极管的驱动晶体管和控制驱动晶体管的操作的开关晶体管，其中开关的有源层 并且使用具有不同密度的硅化物使驱动晶体管结晶，使得驱动晶体管的有源层具有比开关层的有源层更大的晶粒尺寸。

    Method of manufacturing thin film transistor having lightly doped drain regions
    8.
    发明授权
    Method of manufacturing thin film transistor having lightly doped drain regions 有权
    制造具有轻掺杂漏极区的薄膜晶体管的方法

    公开(公告)号：US07871872B2

    公开(公告)日：2011-01-18

    申请号：US11876650

    申请日：2007-10-22

    申请人： Jong-man Kim ,  Kyung-bae Park ,  Jang-yeon Kwon ,  Ji-sim Jung

    发明人： Jong-man Kim ,  Kyung-bae Park ,  Jang-yeon Kwon ,  Ji-sim Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L29/78621 ,  H01L29/66757

    摘要： Provided is a method of manufacturing a thin film transistor, the method comprising: forming an amorphous silicon layer on a substrate; forming a polysilicon layer by crystallizing the amorphous silicon layer; forming a mask structure that masks a portion of the polysilicon; forming a source and a drain region and a channel region interposed between the source and the drain regions in the polysilicon layer; injecting impurities having a first concentration using an ion beam implantation into one end and the other end of the polysilicon layer which are not covered by the mask structure. The ends of the polysilicon layer with the mask thereon is then subjected to ion bombardment to increase the level of impurities in the source and drain regions while at the same time shrinking the size of the masked regions.

    摘要翻译： 提供一种制造薄膜晶体管的方法，该方法包括：在衬底上形成非晶硅层; 通过使非晶硅层结晶而形成多晶硅层; 形成掩模所述多晶硅的一部分的掩模结构; 在所述多晶硅层中形成源极和漏极区域以及介于所述源极和漏极区域之间的沟道区域; 使用离子束注入将具有第一浓度的杂质注入未被掩模结构覆盖的多晶硅层的一端和另一端。 然后对其上具有掩模的多晶硅层的端部进行离子轰击以增加源极和漏极区域中的杂质的水平，同时缩小掩模区域的尺寸。

    Organic electro-luminescent display and method of fabricating the same
    9.
    发明授权
    Organic electro-luminescent display and method of fabricating the same 有权
    有机电致发光显示器及其制造方法

    公开(公告)号：US07799625B2

    公开(公告)日：2010-09-21

    申请号：US11856251

    申请日：2007-09-17

    申请人： Ji-sim Jung ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

    发明人： Ji-sim Jung ,  Jong-man Kim ,  Jang-yeon Kwon ,  Kyung-bae Park

    IPC分类号： H01L21/84

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/3244

    摘要： An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

    摘要翻译： 有机电致发光显示器及其制造方法包括有机发光二极管，驱动有机发光二极管的驱动晶体管和控制驱动晶体管的操作的开关晶体管，其中开关的有源层 并且使用具有不同密度的硅化物使驱动晶体管结晶，使得驱动晶体管的有源层具有比开关层的有源层更大的晶粒尺寸。

    Method of degassing thin layer and method of manufacturing silicon thin film
    10.
    发明授权
    Method of degassing thin layer and method of manufacturing silicon thin film 有权
    薄层脱气方法及制造硅薄膜的方法

    公开(公告)号：US07745314B2

    公开(公告)日：2010-06-29

    申请号：US11692236

    申请日：2007-03-28

    申请人： Kyung-bae Park ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

    发明人： Kyung-bae Park ,  Jong-man Kim ,  Jang-yeon Kwon ,  Ji-sim Jung

    IPC分类号： H01L21/20

    CPC分类号： H01L21/3221 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02667

    摘要： A method of degassing a thin layer and a method of manufacturing a silicon thin film includes applying microwaves to a silicon thin film deposited on a substrate to induce a resonance of impurities of H2, Ar, He, Xe, O2, and the like present in the silicon thin film so as to remove the impurities from the silicon thin film. A wavelength of the microwaves is equal to a natural frequency of an element of an object to be removed. According to a resonance of impurities induced by microwaves, the impurities can be very effectively removed from the silicon thin film so as to obtain a high quality silicon thin film. In particular, the microwaves are very suitable to be used in the manufacture of silicon thin films at low temperature.

    摘要翻译： 对薄层进行脱气的方法和制造硅薄膜的方法包括将微波施加到沉积在基板上的硅薄膜，以引起存在于其中的H 2，Ar，He，Xe，O 2等杂质的共振 硅薄膜，以从硅薄膜中除去杂质。 微波的波长等于要去除的物体的元素的固有频率。 根据由微波引起的杂质的共振，可以非常有效地从硅薄膜除去杂质，从而获得高质量的硅薄膜。 特别地，微波非常适用于在低温下制造硅薄膜。