摘要:
According to example embodiments of inventive concepts, a semiconductor device includes: a substrate, and a stacked structure including interlayer insulating layers and gate electrodes alternately stacked on the substrate. The stacked structure defines a through-hole over the substrate. The gate electrodes each include a first portion between the through-hole and a second portion of the gate electrodes. A channel pattern may be in the through-hole. A tunneling layer may surround the channel pattern. A charge trap layer may surround the tunneling layer, and protective patterns may surround the first portions of the gate electrodes. The protective patterns may be between the first portions of the gate electrodes and the charge trap layer.
摘要:
A method for recovery of residual actinide element from chloride molten salts that are formed after electro-refining and/or electro-winning of a spent nuclear fuel and include actinide elements and rare-earth elements is provided. The method comprises conducting electrolysis using a liquid cadmium cathode (LCC) in the chloride molten salt that is formed after electro-refining and/or electro-winning of a spent nuclear fuel and contains rare-earth elements and actinide elements; electro-depositing the actinide elements contained in the chloride molten salt on the LCC in order to reduce a concentration of the actinide elements; and adding a CdCl2 oxidant to the chloride molten salt containing the LCC-metal alloy in order to oxidize the rare-earth elements co-deposited on the LCC, thereby forming the rare-earth chlorides in the chloride molten salt.
摘要:
A method for recovery of residual actinide element from chloride molten salts that are formed after electro-refining and/or electro-winning of a spent nuclear fuel and include actinide elements and rare-earth elements is provided. The method comprises conducting electrolysis using a liquid cadmium cathode (LCC) in the chloride molten salt that is formed after electro-refining and/or electro-winning of a spent nuclear fuel and contains rare-earth elements and actinide elements; electro-depositing the actinide elements contained in the chloride molten salt on the LCC in order to reduce a concentration of the actinide elements; and adding a CdCl2 oxidant to the chloride molten salt containing the LCC-metal alloy in order to oxidize the rare-earth elements co-deposited on the LCC, thereby forming the rare-earth chlorides in the chloride molten salt.