公开(公告)号：US20070020937A1

公开(公告)日：2007-01-25

申请号：US11502614

申请日：2006-08-09

申请人： Jin-Yuan Chen ,  Frank Hooshdaran ,  Dragan Podlesnik

发明人： Jin-Yuan Chen ,  Frank Hooshdaran ,  Dragan Podlesnik

IPC分类号： H01L21/302

CPC分类号： H01J37/321 ,  H01J37/32706

摘要： A method and apparatus for selectively controlling a plasma in a processing chamber during wafer processing. The method includes providing process gasses into the chamber over a wafer to be processed, and providing high frequency RF power to a plasma generating element and igniting the process gases into the plasma. Modulated RF power is coupled to a biasing element, and wafer processing is performed according to a particular processing recipe. The apparatus includes a biasing element disposed in the chamber and adapted to support a wafer, and a plasma generating element disposed over the biasing element and wafer. A first power source is coupled to the plasma generating element, and a second power source is coupled to the biasing element. A third power source is coupled to the biasing element, wherein the second and third power sources provide a modulated signal to the biasing element.

摘要翻译： 一种用于在晶片处理期间选择性地控制处理室中的等离子体的方法和装置。 该方法包括在要处理的晶片上的室中提供过程气体，以及向等离子体产生元件提供高频RF功率，并将工艺气体点燃到等离子体中。 调制的RF功率耦合到偏置元件，并且根据特定的处理配方执行晶片处理。 该装置包括设置在腔室中并适于支撑晶片的偏置元件和设置在偏置元件和晶片上方的等离子体产生元件。 第一电源耦合到等离子体发生元件，并且第二电源耦合到偏置元件。 第三电源耦合到偏置元件，其中第二和第三电源向偏置元件提供调制信号。

公开(公告)号：US20060175015A1

公开(公告)日：2006-08-10

申请号：US11376430

申请日：2006-03-14

申请人： Jin-Yuan Chen ,  Frank Hooshdaran ,  Dragan Podlesnik

发明人： Jin-Yuan Chen ,  Frank Hooshdaran ,  Dragan Podlesnik

IPC分类号： C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32706

摘要： A method and apparatus for selectively controlling a plasma in a processing chamber during wafer processing. The method includes providing process gasses into the chamber over a wafer to be processed, and providing high frequency RF power to a plasma generating element and igniting the process gases into the plasma. Modulated RF power is coupled to a biasing element, and wafer processing is performed according to a particular processing recipe. The apparatus includes a biasing element disposed in the chamber and adapted to support a wafer, and a plasma generating element disposed over the biasing element and wafer. A first power source is coupled to the plasma generating element, and a second power source is coupled to the biasing element. A third power source is coupled to the biasing element, wherein the second and third power sources provide a modulated signal to the biasing element.

摘要翻译： 一种用于在晶片处理期间选择性地控制处理室中的等离子体的方法和装置。 该方法包括在要处理的晶片上的室中提供过程气体，以及向等离子体产生元件提供高频RF功率，并将工艺气体点燃到等离子体中。 调制的RF功率耦合到偏置元件，并且根据特定的处理配方执行晶片处理。 该装置包括设置在腔室中并适于支撑晶片的偏置元件和设置在偏置元件和晶片上方的等离子体产生元件。 第一电源耦合到等离子体发生元件，并且第二电源耦合到偏置元件。 第三电源耦合到偏置元件，其中第二和第三电源向偏置元件提供调制信号。

公开(公告)号：US06447637B1

公开(公告)日：2002-09-10

申请号：US09602652

申请日：2000-06-22

申请人： Valentin N. Todorov ,  Robert E. Ryan ,  Arthur Sato ,  Jin-Yuan Chen ,  Xueyu Qian ,  Zhiwen Sun

发明人： Valentin N. Todorov ,  Robert E. Ryan ,  Arthur Sato ,  Jin-Yuan Chen ,  Xueyu Qian ,  Zhiwen Sun

IPC分类号： C23F100

CPC分类号： H01J37/321

摘要： The present invention provides a process chamber and voltage distributive electrode (VDE) which distributes capacitive coupling between an inductive source and a plasma in a process chamber. The VDE is preferably slotted defining energy opaque and energy transparent portions which enable inductive coupling into the chamber while distributing capacitive coupling uniformly over the dielectric window.

摘要翻译： 本发明提供一种在处理室中分布感应源和等离子体之间的电容耦合的处理室和分压电极（VDE）。 VDE优选是开槽的，其限定能量不透明和能量透明部分，其能够在电容耦合均匀地分布在电介质窗口上的同时使电感耦合到腔室中。

公开(公告)号：US06472822B1

公开(公告)日：2002-10-29

申请号：US09560108

申请日：2000-04-28

申请人： Jin-Yuan Chen ,  John P. Holland ,  Arthur H. Sato ,  Valentin N. Todorow

发明人： Jin-Yuan Chen ,  John P. Holland ,  Arthur H. Sato ,  Valentin N. Todorow

IPC分类号： H05H146

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A system and method for overcoming the above-described problems relating to the delivery of pulsed RF power to a plasma processing chamber. The power reflected from the chamber is reduced using one or more of the following techniques: (1) varying the RF frequency within a pulse period; (2) ramping up the pulse heights at the leading edge of the pulse train; (3) simultaneously transmitting a relatively low CW signal along with the pulsed signal; and (4) rapidly switching the shunt capacitance within a local matching network within a pulse period. The amount of power delivered to the plasma by the pulses is measured by way of a time-averaging mechanism coupled to a directional coupler connected to the transmission line. The time-averaging mechanism may comprise circuitry to measure temperatures of loads attached to the directional coupler, or analog integrating circuitry attached to the directional coupler, or digital integrating circuitry attached to the directional coupler.

摘要翻译： 一种用于克服与脉冲RF功率传递到等离子体处理室相关的上述问题的系统和方法。 使用以下一种或多种技术来减小从腔室反射的功率：（1）在脉冲周期内改变RF频率; （2）在脉冲串前缘上升高脉冲高度; （3）同时发送相对较低的CW信号以及脉冲信号; 和（4）在脉冲周期内快速切换局部匹配网络内的并联电容。 通过连接到连接到传输线的定向耦合器的时间平均机制来测量由脉冲输送到等离子体的功率量。 时间平均机构可以包括用于测量附接到定向耦合器的负载的温度或者连接到定向耦合器的模拟积分电路或附接到定向耦合器的数字积分电路的电路。