公开(公告)号：US07777152B2

公开(公告)日：2010-08-17

申请号：US11671927

申请日：2007-02-06

申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons, III ,  John P. Holland

IPC分类号： B23K9/02 ,  H01P5/08 ,  C23C16/00

CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

公开(公告)号：US07552736B2

公开(公告)日：2009-06-30

申请号：US11685775

申请日：2007-03-14

申请人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving at least a peripheral annular portion of the backside exposed. The process further includes confining gas flow at the edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the wafer front side and a lower process zone containing the wafer backside. The process also includes providing a polymer etch precursor gas underneath the backside edge of the workpiece and applying RF power to a region underlying the backside edge of the workpiece to generate a first plasma of polymer etch species concentrated in an annular ring concentric with and underneath the backside edge of the workpiece.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该方法包括在真空室的背面支撑工件，同时至少留下背面的周边环形部分。 该方法还包括将工件边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含晶片前端的上工艺区域之间的边界 侧面和下部工艺区域，其中包含晶片背面。 该方法还包括在工件的后边缘下方提供聚合物蚀刻前体气体，并将RF功率施加到工件的后边缘下方的区域，以产生聚集在一起的聚合物蚀刻物质等离子体 工件的后边缘。

公开(公告)号：US07718538B2

公开(公告)日：2010-05-18

申请号：US11677472

申请日：2007-02-21

申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32009 ,  H01L21/3065 ,  H01L21/32137

摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。

公开(公告)号：US20080179289A1

公开(公告)日：2008-07-31

申请号：US11685769

申请日：2007-03-14

申请人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

发明人： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC分类号： C23F1/00

CPC分类号： H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at an edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a local plasma chamber from a polymer etch precursor gas. The process includes directing a localized stream of an etchant by-product from the first plasma onto a target portion of the backside of the workpiece, the target portion having a diameter corresponding to a diameter of the stream, while rotating the workpiece.

摘要翻译： 提供了从工件的背面除去聚合物的方法。 该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。 该方法还包括将工件的边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界 和一个含有背面的下部工艺区。 在聚合物蚀刻前体气体的局部等离子体室中产生第一等离子体。 该方法包括将来自第一等离子体的蚀刻剂副产物的局部流引导到工件的背面的目标部分上，目标部分具有对应于流的直径的直径，同时旋转工件。

公开(公告)号：US5801386A

公开(公告)日：1998-09-01

申请号：US653212

申请日：1996-05-28

申请人： Valentin N. Todorov ,  Yoshi Tanase ,  Xue-Yu Qian ,  Arthur H. Sato ,  Peter Loewenhardt ,  Yan Ye ,  Shaoher X. Pan ,  Dragan Podlesnik

发明人： Valentin N. Todorov ,  Yoshi Tanase ,  Xue-Yu Qian ,  Arthur H. Sato ,  Peter Loewenhardt ,  Yan Ye ,  Shaoher X. Pan ,  Dragan Podlesnik

IPC分类号： H01J37/32 ,  H01J37/244

CPC分类号： H01J37/32935

摘要： Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.

摘要翻译： 用于测量半导体晶片处理系统内的等离子体特性的装置及其制造和使用方法。 该装置包含第一绝缘体层，通过图案化和蚀刻铜层压体而形成一个或多个导电集电极焊盘。 每个集电极焊盘连接到从每个集电极焊盘延伸到第一绝缘体层的边缘的导电引线（例如印刷电路迹线）。 第二绝缘体层位于第一绝缘体层之上，使得集电极焊盘及其相应的引线夹在两个绝缘体层之间。 使用粘合剂将第二绝缘体固定到第一绝缘体和集电板。 集电极焊盘通过由第二绝缘体层限定的孔暴露于等离子体。

公开(公告)号：US20070284344A1

公开(公告)日：2007-12-13

申请号：US11671927

申请日：2007-02-06

申请人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons ,  John P. Holland

发明人： Valentin N. Todorov ,  Michael D. Willwerth ,  Alexander Paterson ,  Brian K. Hatcher ,  James E. Sammons ,  John P. Holland

IPC分类号： B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32706 ,  H03H1/0007

摘要： An RF blocking filter isolates a two-phase AC power supply from at least 2 kV p-p of power of an HF frequency that is reactively coupled to a resistive heating element, while conducting several kW of 60 Hz AC power from the two-phase AC power supply to the resistive heating element without overheating, the two-phase AC power supply having a pair of terminals and the resistive heating element having a pair of terminals. The filter includes a pair of cylindrical non-conductive envelopes each having an interior diameter between about one and two inches and respective pluralities of fused iron powder toroids of magnetic permeability on the order of about 10 stacked coaxially within respective ones of the pair of cylindrical envelopes, the exterior diameter of the toroids being about the same as the interior diameter of each of the envelopes. A pair of wire conductors of diameter between 3 mm and 3.5 mm are helically wound around corresponding ones of the pair of envelopes to form respective inductor windings in the range of about 16 to 24 turns for each the envelope, each of the conductors having an input end and an output end. The input end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the two-phase AC power supply, and the output end of each one of the conductors is coupled to a corresponding one of the pair of terminals of the resistive heating element.

摘要翻译： RF阻断滤波器将两相交流电源从反应耦合到电阻加热元件的HF频率的至少2kV pp的功率隔离，同时从两相交流电源进行几kW的60Hz AC电力 供给电阻加热元件而不会过热，两相交流电源具有一对端子和电阻加热元件具有一对端子。 该过滤器包括一对圆柱形非导电封套，每一个内径均在约一英寸至两英寸之间，并且相应的多个约10层的磁导率的熔融铁粉末环形环共轴同心地位于一对圆柱形封套中 环形线圈的外径与每个信封的内径大致相同。 直径在3毫米与3.5毫米之间的一对电线导体螺旋缠绕在一对信封的相应的一对信封上，以形成每个封套约16至24匝范围内的相应的电感绕组，每个导体具有一个输入 结束和输出结束。 每个导体的输入端耦合到两相交流电源的一对端子中的对应的一个，并且每一个导体的输出端耦合到该对端子中相应的一个端子 的电阻加热元件。

公开(公告)号：US06962644B2

公开(公告)日：2005-11-08

申请号：US10241653

申请日：2002-09-10

申请人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

发明人： Alexander Paterson ,  Valentin N. Todorov ,  Jon McChesney ,  Gerhard M. Schneider ,  David Palagashvili ,  John P. Holland ,  Michael S. Barnes

IPC分类号： H01L21/00 ,  C23F1/00 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32458

摘要： A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.

摘要翻译： 一种用于处理晶片的方法和装置，包括限定多个隔离处理区域的腔室。 隔离处理区域具有上端和下端。 所述室还包括多个等离子体产生装置，每个等离子体产生装置邻近每个隔离处理区域的上端设置，并且连接到每个等离子体产生装置的多个电源中的一个。 多个电源的输出频率是相位和/或频率锁定在一起的。 另外，腔室包括多个气体分配组件。 每个气体分配组件设置在每个隔离的处理区域内。 可移动的晶片支撑件设置在每个隔离的处理区域内以支撑用于等离子体处理的晶片。 可移动晶片支撑件包括耦合到偏置电源的偏置电极，偏置电源被配置为控制等离子体离子朝向可移动晶片支撑件的轰击。

公开(公告)号：US07674394B2

公开(公告)日：2010-03-09

申请号：US11679122

申请日：2007-02-26

申请人： Alexander Paterson ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland

发明人： Alexander Paterson ,  Valentin N. Todorov ,  Theodoros Panagopoulos ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond, IV ,  John P. Holland

IPC分类号： G01L21/30 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01J37/32082 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244

摘要： A method of processing a workpiece in the chamber of a plasma reactor includes capacitively coupling plasma source power using a ceiling gas distribution plate as the electrode while inductively coupling plasma source power through the ceiling gas distribution plate, and flowing process gas through the gas distribution plate from a gas input to plural gas injection orifices, distributing the gas flow within the gas distribution plate through a succession of arcuate paths joined at respective junctions, dividing gas flow at each junction from a first respective one of said gas flow paths into a respective pair of said gas flow paths in opposite gas flow directions, and restricting the arcuate length of each of the arcuate paths to less than half-circles.

摘要翻译： 在等离子体反应器的室中处理工件的方法包括使用天花板气体分配板作为电极电容耦合等离子体源功率，同时通过天花板气体分配板感应耦合等离子体源功率，并且使处理气体通过气体分配板 从气体输入到多个气体注入孔，通过在各个接合处连接的一系列弧形路径将气流分布在气体分布板内，将每个连接处的气流从第一相应的一个气流通道分成相应的对 的所述气体流动路径在相反的气体流动方向上，并且将每个弧形路径的弓形长度限制为小于半圈。

公开(公告)号：US20080230008A1

公开(公告)日：2008-09-25

申请号：US11689405

申请日：2007-03-21

申请人： Alexander Paterson ,  Theodoros Panagopoulos ,  Valentin N. Todorov ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

发明人： Alexander Paterson ,  Theodoros Panagopoulos ,  Valentin N. Todorov ,  Brian K. Hatcher ,  Dan Katz ,  Edward P. Hammond ,  John P. Holland

IPC分类号： C23C16/513 ,  H05H1/24

CPC分类号： H01J37/32146 ,  H01J37/32091 ,  H01J37/32165

摘要： An apparatus for processing a substrate has a chamber, a high frequency power source, and a low frequency power source. The chamber has a first and second electrode disposed therein. The high frequency power source is electrically coupled to either the first or second electrode to supply a first RF signal. The low frequency power source electrically coupled to either the first or second electrode to supply a second RF signal. The first RF signal is pulsed on and off so as to enhance electron loss in the chamber.

摘要翻译： 用于处理衬底的设备具有腔室，高频电源和低频电源。 该室具有设置在其中的第一和第二电极。 高频电源电耦合到第一或第二电极以提供第一RF信号。 所述低频电源电耦合到所述第一或第二电极以提供第二RF信号。 第一RF信号被脉冲打开和关闭，以增强腔室中的电子损失。

公开(公告)号：US20080197110A1

公开(公告)日：2008-08-21

申请号：US11677472

申请日：2007-02-21

申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32009 ,  H01L21/3065 ,  H01L21/32137

摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。