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    Light-emitting diode chip comprising a converter layer and method of making a light-emitting diode chip comprising a converter layer
    3.
    发明授权
    Light-emitting diode chip comprising a converter layer and method of making a light-emitting diode chip comprising a converter layer 有权
    包括转换器层的发光二极管芯片以及制造包括转换器层的发光二极管芯片的方法

    公开(公告)号：US07462878B2

    公开(公告)日：2008-12-09

    申请号：US11233954

    申请日：2005-09-23

    申请人： Markus Richter ,  Franz Eberhard ,  Peter Holzer ,  Ewald Karl Michael Guenther

    发明人： Markus Richter ,  Franz Eberhard ,  Peter Holzer ,  Ewald Karl Michael Guenther

    IPC分类号： H01L33/00

    CPC分类号： H01L33/508

    摘要： Disclosed is a light-emitting diode chip comprising a semiconductor layer sequence suitable for emitting primary electromagnetic radiation and further comprising a converter layer that is applied to at least one main face of the semiconductor layer sequence and comprises at least one phosphor suitable for converting a portion of the primary radiation into secondary radiation, at least a portion of the secondary radiation and at least a portion of the unconverted primary radiation overlapping to form a mixed radiation with a resulting color space. The converter layer is purposefully structured to adjust a dependence of the resulting color space on viewing angle. Also disclosed is a method of making a light-emitting diode chip in which a converter layer is purposefully structured.

    摘要翻译： 公开了一种发光二极管芯片，其包括适于发射主要电磁辐射的半导体层序列，并且还包括施加到半导体层序列的至少一个主面的转换器层，并且包括至少一种适于将部分 的主辐射进入次级辐射，次级辐射的至少一部分和未转换的主辐射的至少一部分重叠以形成具有所得颜色空间的混合辐射。 有意地构造转换器层以调整所得颜色空间对视角的依赖性。 还公开了制造其中有目的地构造转换器层的发光二极管芯片的方法。

    Method for producing an optoelectronic component
    4.
    发明申请
    Method for producing an optoelectronic component 有权
    光电子元件的制造方法

    公开(公告)号：US20070238210A1

    公开(公告)日：2007-10-11

    申请号：US11810326

    申请日：2007-06-04

    申请人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    发明人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  Y10S438/947

    摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.

    摘要翻译： 公开了一种用于制造光电子部件的方法。 该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层 在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小， 并去除掩模层。

    Optoelectronic component having a plurality of current expansion layers and method for producing it
    5.
    发明申请
    Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
    具有多个电流膨胀层的光电子部件及其制造方法

    公开(公告)号：US20050253163A1

    公开(公告)日：2005-11-17

    申请号：US11120514

    申请日：2005-05-02

    申请人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    发明人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    IPC分类号： H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/22 ,  H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  Y10S438/947

    摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).

    摘要翻译： 一种具有半导体芯片的光电子元件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。 提供连接触点（9），用于将电流施加到活动区域中。 第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。 第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。 第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。

    Method for producing an optoelectronic component
    6.
    发明授权
    Method for producing an optoelectronic component 有权
    光电子元件的制造方法

    公开(公告)号：US07742677B2

    公开(公告)日：2010-06-22

    申请号：US11810326

    申请日：2007-06-04

    申请人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    发明人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    IPC分类号： G02B6/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  Y10S438/947

    摘要： A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.

    摘要翻译： 公开了一种用于制造光电子部件的方法。 该方法包括以下步骤：提供衬底，向衬底施加半导体层序列，向半导体层序列施加至少两个电流扩展层，施加和图案化掩模层，通过蚀刻图案化第二电流膨胀层 在掩模层的侧壁被切下的过程中，通过蚀刻工艺来对第一电流膨胀层进行图案化，在该过程期间，掩模层的侧壁至少比在第二电流膨胀层的图案化期间底切的程度更小， 并去除掩模层。

    Optoelectronic component having a plurality of current expansion layers and method for producing it
    7.
    发明授权
    Optoelectronic component having a plurality of current expansion layers and method for producing it 有权
    具有多个电流膨胀层的光电子部件及其制造方法

    公开(公告)号：US07227191B2

    公开(公告)日：2007-06-05

    申请号：US11120514

    申请日：2005-05-02

    申请人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    发明人： Franz Eberhard ,  Uwe Strauss ,  Ulrich Zehnder ,  Andreas Weimar ,  Raimund Oberschmid

    IPC分类号： H01L27/15 ,  H01L27/148 ,  H01L27/14 ,  H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/38 ,  Y10S438/947

    摘要： An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).

    摘要翻译： 一种具有半导体芯片的光电子部件，该半导体芯片包含具有辐射发射有源区（4）的半导体层序列（6），该半导体层序列（6）具有侧壁（10）。 提供连接触点（9），用于将电流施加到活动区域中。 第一电流膨胀层（7）邻接半导体层序列（6）的半导体层（5），并且在半导体层序列（6）和连接触头（9）之间设置第二电流扩展层（8）。 第一电流膨胀层（7）具有比第二电流膨胀层（8）更大的薄层电阻，并与邻接的半导体层（5）形成欧姆接触。 第二电流膨胀层（8）被施加到距离侧壁（10）一定距离的第一电流膨胀层（7）的部分区域。