Holder for liquid phase epitaxial growth
    1.
    发明授权
    Holder for liquid phase epitaxial growth 失效
    支持液相外延生长

    公开(公告)号:US4350116A

    公开(公告)日:1982-09-21

    申请号:US219075

    申请日:1980-12-22

    IPC分类号: C30B19/06 B05C13/02

    CPC分类号: C30B19/068 Y10S269/903

    摘要: A holder for liquid phase epitaxial (LPE) growth which eliminates mesas on the surface of the film is described. The holder has two legs to which a ring is connected. The ring has holding means so that it can hold one wafer or two wafers back-to-back. One of the two legs extends vertically below the first ring. In a preferred embodiment a second ring having holding means for a pair of wafers back-to-back is attached to the elongated leg. This holder structure prevents a film from the liquid melt from forming when the holder is withdrawn from the liquid growth solution, thereby eliminating the formation of mesas which occur when the film ruptures.

    摘要翻译: 描述了用于消除膜表面上的台面的液相外延(LPE)生长的保持器。 支架具有两个连接环的支脚。 环具有保持装置,使得其可以背对背地保持一个晶片或两个晶片。 两条腿中的一条垂直于第一环的下方延伸。 在优选实施例中,具有用于一对背板背对的保持装置的第二环连接到细长的腿上。 当保持器从液体生长溶液中取出时,该保持器结构防止了液体熔融物的形成,从而消除了当膜破裂时出现的台面的形成。

    Rotary electroplating cell with controlled current distribution
    2.
    发明授权
    Rotary electroplating cell with controlled current distribution 失效
    具有受控电流分布的旋转电镀电池

    公开(公告)号:US4304641A

    公开(公告)日:1981-12-08

    申请号:US209779

    申请日:1980-11-24

    摘要: An apparatus and a method for rotary electroplating a thin metallic film having a uniform thickness and composition throughout. The apparatus includes a flow-through jet plate having nozzles of increasing size and uniformly spaced radially therethrough, or the same sized nozzles with varying radial spacing therethrough so as to provide a differential flow distribution of the plating solution that impinges on the wafer-cathode where the film is deposited. The spacing and size of the nozzles are critical to obtaining a uniform thickness. The electrical currents to the wafer and to the thieving ring are controlled by variable resistors so as to keep the electrical current to the cathode constant throughout the plating process. In a preferred embodiment the flow-through jet plate has an anode associated therewith in which the exposed area of the anode is maintained at a constant amount during the deposition. This method can simultaneously deposit with a uniform thickness and composition elements having a minimum gap or part size of 1 micrometer or less.

    摘要翻译: 一种用于旋转电镀具有均匀厚度和组成的薄金属膜的设备和方法。 该装置包括具有增大尺寸和径向均匀间隔的喷嘴的流通喷射板,或具有通过其的径向间隔变化的相同尺寸的喷嘴,以提供冲击晶片阴极的电镀溶液的差分流动分布, 电影被存放。 喷嘴的间距和尺寸对获得均匀的厚度至关重要。 通过可变电阻器控制到晶圆和盗窃环的电流,以便在整个电镀过程中保持对阴极的电流恒定。 在优选实施例中,流通喷射板具有与之相关联的阳极,其中阳极的暴露区域在沉积期间保持恒定的量。 该方法可以同时沉积具有1微米或更小的最小间隙或部分尺寸的均匀厚度和组成元素。

    Process for slicing boules of single crystal material
    3.
    发明授权
    Process for slicing boules of single crystal material 失效
    单晶材料切片方法

    公开(公告)号:US4084354A

    公开(公告)日:1978-04-18

    申请号:US803082

    申请日:1977-06-03

    摘要: A process for slicing boules of a single crystal material such as gadolinium gallium garnet (GGG) into wafers is described. The boule is prepared, by grinding preferably, so that the longitudinal boule axis corresponds to the crystallographic orientation axis of the boule. The boule is then mounted in a fixture and aligned so that the common longitudinal axis and crystallographic orientation axis is perpendicular to the saw blade. The boule is then rotated while maintaining the orientation of the combined common axis and engaged against an inner diameter rotating saw blade for a time sufficient for the blade to slice through the boule and form a wafer. The wafers obtained by this slicing process may be directly polished without the conventional lapping step to form a wafer having a surface that is substantially flat, parallel and defect free.

    摘要翻译: 描述了将诸如钆镓石榴石(GGG)的单晶材料的坯料切成晶片的方法。 通过优选研磨来制备所述预制棒,使得所述纵向轴轴对应于所述轴的晶体取向轴线。 然后将该支架安装在夹具中并对齐,使得公共纵向轴线和结晶定向轴线垂直于锯片。 然后在保持组合的共同轴线的方向并且与内径旋转的锯片接合足够的时间以使叶片穿过毛坯并形成晶片的同时旋转轴。 通过该切片方法获得的晶片可以直接抛光,而不需要传统的研磨步骤,以形成具有基本平坦,平行和无缺陷的表面的晶片。