-
1.发明授权Vertical geometry light emitting diode with group III nitride active layer and extended lifetime 失效具有III族氮化物活性层的垂直几何型发光二极管和延长的使用寿命
公开(公告)号：US5523589A
公开(公告)日：1996-06-04
申请号：US309251
申请日：1994-09-20
IPC分类号： H01L33/00 , H01L33/32 , H01L31/0312
CPC分类号： H01L33/32 , H01L33/007
摘要： A light emitting diode emits in the blue portion of the visible spectrum and is characterized by an extended lifetime. The light emitting diode comprises a conductive silicon carbide substrate; an ohmic contact to the silicon carbide substrate; a conductive buffer layer on the substrate and selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and a double heterostructure including a p-n junction on the buffer layer in which the active and heterostructure layers are selected from the group consisting of binary Group III nitrides and ternary Group III nitrides.
摘要翻译： 发光二极管发射在可见光谱的蓝色部分，其特征在于延长的使用寿命。 发光二极管包括导电碳化硅衬底; 与碳化硅衬底的欧姆接触; 选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物的导电缓冲层，其中A和B是III族元素，其中x为零， 或零和1之间的分数，以及碳化硅与这种三元III族氮化物的合金; 以及包括在缓冲层上的p-n结的双异质结构，其中活性和异质结构层选自二元III族氮化物和三元III族氮化物。
-
公开(公告)号：US5592501A
公开(公告)日：1997-01-07
申请号：US309247
申请日：1994-09-20
申请人： John A. Edmond , Gary E. Bulman , Hua-Shuang Kong
发明人： John A. Edmond , Gary E. Bulman , Hua-Shuang Kong
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01S5/32341 , H01S5/343 , H01S5/021 , H01S5/3201 , H01S5/3226 , H01S5/34333
摘要： A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.
摘要翻译： 公开了一种III族氮化物激光器结构，该有源层包括至少一层III族氮化物或碳化硅与III族氮化物的合金，碳化硅衬底以及在活性层和 碳化硅衬底。 缓冲层选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物，其中A和B是III族元素，其中x是0，1，或者是 零和一个，以及碳化硅与这种三元III族氮化物的合金。 在优选实施例中，激光器结构包括有源层上方的应变最小化接触层，其具有与缓冲层基本相同的晶格常数。
-
公开(公告)号：US5338944A
公开(公告)日：1994-08-16
申请号：US125284
申请日：1993-09-22
CPC分类号： H01L33/34 , H01L33/0008 , H01S5/3095
摘要： A light emitting diode is disclosed that emits light in the blue region of the visible spectrum with increased brightness and efficiency. The light emitting diode comprises an n-type silicon carbide substrate; an n-type silicon carbide top layer; and a light emitting p-n junction structure between the n-type substrate and the n-type top layer. The p-n junction structure is formed of respective portions of n-type silicon carbide and p-type silicon carbide. The diode further includes means between the n-type top layer and the n-type substrate for coupling the n-type top layer to the light-emitting p-n junction structure while preventing n-p-n behavior between the n-type top layer, the p-type layer in the junction structure, and the n-type substrate.
摘要翻译： 公开了一种以增加的亮度和效率在可见光谱的蓝色区域中发光的发光二极管。 发光二极管包括n型碳化硅衬底; n型碳化硅顶层; 以及n型衬底和n型顶层之间的发光p-n结结构。 p-n结结构由n型碳化硅和p型碳化硅的各部分形成。 二极管还包括在n型顶层和n型衬底之间的装置，用于将n型顶层耦合到发光pn结结构，同时防止n型顶层，p型 接合结构中的层，以及n型衬底。
-
公开(公告)号：US5838706A
公开(公告)日：1998-11-17
申请号：US752203
申请日：1996-11-19
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/007 , H01S5/32341 , H01S5/343 , H01S5/021 , H01S5/3201 , H01S5/3226 , H01S5/34333
摘要： A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.
摘要翻译： 公开了一种III族氮化物激光器结构，该有源层包括至少一层III族氮化物或碳化硅与III族氮化物的合金，碳化硅衬底以及在活性层和 碳化硅衬底。 缓冲层选自氮化镓，氮化铝，氮化铟，具有式AxB1-xN的三元III族氮化物，其中A和B是III族元素，其中x是0，1，或者是 零和一个，以及碳化硅与这种三元III族氮化物的合金。 在优选实施例中，激光器结构包括有源层上方的应变最小化接触层，其具有与缓冲层基本相同的晶格常数。
-
-
-
搜索结果
4 条记录 (耗时 0.018 秒)
