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1.发明授权Group III nitride LED with undoped cladding layer and multiple quantum well 有权具有无掺杂包层和多量子阱的III族氮化物LED公开(公告)号：US06906352B2
公开(公告)日：2005-06-14
申请号：US10159893
申请日：2002-05-30
申请人： John Adam Edmond , Kathleen Marie Doverspike , Hua-Shuang Kong , Michael John Bergmann , David Todd Emerson
发明人： John Adam Edmond , Kathleen Marie Doverspike , Hua-Shuang Kong , Michael John Bergmann , David Todd Emerson
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y
摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 该结构包括第一n型包覆层，其中0 <= x <= 1 和0 <= y <1和（x + y）<= 1; 第一n型包覆层，其中0 <= x <= 1和0 < = y <1和（x + y）<= 1，其中所述第二n型包层的进一步特征在于基本上不存在镁; 在多个量子阱形式的第一和第二覆层之间的有效部分，其具有多个In x N Ga 1-x N N阱层，其中0
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公开(公告)号：US07692209B2
公开(公告)日：2010-04-06
申请号：US11419523
申请日：2006-05-22
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/32341
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.
摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 半导体结构包括位于第一n型III族氮化物覆层和第二n型III族氮化物覆层之间的III族氮化物有源层，第一和第n型包层的各个带隙大于 有源层的带隙。 半导体结构还包括位于半导体结构中的p型III族氮化物层，使得第二n型覆层位于p型层和有源层之间。
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公开(公告)号：US07071490B2
公开(公告)日：2006-07-04
申请号：US10948363
申请日：2004-09-23
IPC分类号： H01L31/0312
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/32341
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer. The semiconductor structure is built upon a silicon carbide substrate.
摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 半导体结构包括位于第一n型III族氮化物覆层和第二n型III族氮化物覆层之间的III族氮化物有源层，第一和第n型包层的各个带隙大于 有源层的带隙。 半导体结构还包括位于半导体结构中的p型III族氮化物层，使得第二n型覆层位于p型层和有源层之间。 半导体结构构建在碳化硅衬底上。
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4.发明授权公开(公告)号：US06784461B2
公开(公告)日：2004-08-31
申请号：US10376519
申请日：2003-03-01
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.
摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 半导体结构包括III族氮化物的第一覆盖层，III族氮化物的第二覆盖层和位于第一和第二覆盖层之间的III族氮化物的有源层，并且其带隙小于 第一和第二包覆层的各自的带隙。 半导体结构的特征在于在这些结构层中的一个或多个中不存在镓。
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5.发明授权Light emitting devices with Group III nitride contact layer and superlattice 有权具有III族氮化物接触层和超晶格的发光器件公开(公告)号：US06717185B2
公开(公告)日：2004-04-06
申请号：US10376494
申请日：2003-03-01
IPC分类号： H01L29205
CPC分类号： H01L33/32 , H01L33/007
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.
摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 半导体结构包括III族氮化物的第一覆盖层，III族氮化物的第二覆盖层和位于第一和第二覆盖层之间的III族氮化物的有源层，并且其带隙小于 第一和第二包覆层的各自的带隙。 半导体结构的特征在于在这些结构层中的一个或多个中不存在镓。
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公开(公告)号：USRE45059E1
公开(公告)日：2014-08-05
申请号：US13439292
申请日：2012-04-04
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/32341
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.
摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 半导体结构包括位于第一n型III族氮化物覆层和第二n型III族氮化物覆层之间的III族氮化物有源层，第一和第n型包层的各个带隙大于 有源层的带隙。 半导体结构还包括位于半导体结构中的p型III族氮化物层，使得第二n型覆层位于p型层和有源层之间。
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公开(公告)号：US07170097B2
公开(公告)日：2007-01-30
申请号：US10367495
申请日：2003-02-14
IPC分类号： H01L29/15
CPC分类号： H01L33/145 , H01L33/0004 , H01L33/04
摘要： An electronic device includes a conductive n-type substrate, a Group III nitride active region, an n-type Group III-nitride layer in vertical relationship to the substrate and the active layer, at least one p-type layer, and means for providing a non-rectifying conductive path between the p-type layer and the n-type layer or the substrate. The non-rectifying conduction means may include a degenerate junction structure or a patterned metal layer.
摘要翻译： 电子器件包括导电n型衬底，III族氮化物有源区，与衬底和有源层垂直的n型III族氮化物层，至少一个p型层，以及用于提供 在p型层和n型层或衬底之间的非整流导电路径。 非整流传导装置可以包括简并结结构或图案化的金属层。
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公开(公告)号：US06987281B2
公开(公告)日：2006-01-17
申请号：US10366053
申请日：2003-02-13
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , B82Y20/00 , H01L33/04 , H01S5/0425 , H01S5/32341 , H01S5/3425
摘要： A superlattice contact structure for light emitting devices includes a plurality of contiguous p-type Group III nitride layers. The contact structure may be formed of p-type indium nitride, aluminum indium nitride, or indium gallium nitride. Also disclosed is a light emitting device that incorporates the disclosed contact structures.
摘要翻译： 发光器件的超晶格接触结构包括多个邻接的p型III族氮化物层。 接触结构可以由p型氮化铟，氮化铟铟或氮化铟镓形成。 还公开了结合所公开的接触结构的发光器件。
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公开(公告)号：US06952024B2
公开(公告)日：2005-10-04
申请号：US10365901
申请日：2003-02-13
CPC分类号： H01L33/32 , H01L33/26 , H01S5/3214 , H01S5/32341
摘要： A semiconductor structure for light emitting devices includes a Group III nitride active layer positioned between a silicon carbide cladding layer and a Group III nitride cladding layer, wherein the silicon carbide cladding layer and the Group III nitride cladding layer have opposite conductivity types. Moreover, the silicon carbide cladding layer and the Group III nitride cladding layer have respective bandgaps that are larger than the bandgap of the active layer.
摘要翻译： 用于发光器件的半导体结构包括位于碳化硅包覆层和III族氮化物覆层之间的III族氮化物有源层，其中碳化硅包覆层和III族氮化物覆层具有相反的导电类型。 此外，碳化硅包覆层和III族氮化物覆层具有比有源层的带隙大的各个带隙。
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公开(公告)号：US06800876B2
公开(公告)日：2004-10-05
申请号：US09760635
申请日：2001-01-16
IPC分类号： H01L2922
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/32341
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.
摘要翻译： 本发明是一种能够在电磁光谱的红色至紫外部分发射的发光器件的半导体结构。 半导体结构包括位于第一n型III族氮化物覆层和第二n型III族氮化物覆层之间的III族氮化物有源层，第一和第n型包层的各个带隙大于 有源层的带隙。 半导体结构还包括位于半导体结构中的p型III族氮化物层，使得第二n型覆层位于p型层和有源层之间。
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