公开(公告)号：US5027362A

公开(公告)日：1991-06-25

申请号：US291899

申请日：1988-12-29

申请人： John L. Hokanson ,  Robert G. Swartz

发明人： John L. Hokanson ,  Robert G. Swartz

IPC分类号： H01S5/068 ,  H01S5/0683

CPC分类号： H01S5/06832 ,  H01S5/06812

摘要： A laser biasing stabilization circuit and method uses the second derivative of the optical light output of a laser with respect to the current through the laser, d.sup.2 L/dI.sup.2, in a feedback loop to control the laser bias current through the laser. The modulation current in the laser is controlled using a second, average power feedback loop.

公开(公告)号：US4873566A

公开(公告)日：1989-10-10

申请号：US8051

申请日：1987-01-15

申请人： John L. Hokanson ,  Palmer D. Smeltz, Jr. ,  Katherine A. Yanushefski ,  Michael J. Yanushefski ,  Craig A. Young

发明人： John L. Hokanson ,  Palmer D. Smeltz, Jr. ,  Katherine A. Yanushefski ,  Michael J. Yanushefski ,  Craig A. Young

IPC分类号： G02B6/42 ,  H01L33/48 ,  H01L33/58 ,  H01S5/02 ,  H01S5/022 ,  H01S5/062

CPC分类号： H01L33/483 ,  G02B6/4202 ,  G02B6/4248 ,  G02B6/4251 ,  G02B6/4274 ,  G02B6/4269 ,  G02B6/4271 ,  G02B6/4286 ,  H01L2224/48137 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L33/58 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/06226 ,  Y10S257/93

摘要： A multilayer ceramic package for optical devices is disclosed for use in both high and low bit rate applications. A side portion of the multilayer package is formed to provide a multilayer microwave input connection for a high bit rate signal. In an exemplary arrangement, an intermediate ceramic layer of the multilayer structure is defined with an appropriate thickness and metallized on areas of the top and bottom surfaces. This combination thus forms a multilayer microwave connection defined as a microstrip. Other multilayer configurations, for example, a stripline, may also be used. By utilizing a multilayer microwave connection in place of a conventional electrical connection, the impedance of the high frequency input source can be better matched to the optical device.

摘要翻译： 公开了用于光学器件的多层陶瓷封装，用于高和低位速率应用。 形成多层封装的侧面部分以提供用于高比特率信号的多层微波输入连接。 在示例性布置中，多层结构的中间陶瓷层被限定为具有合适的厚度并在顶表面和底表面的区域上金属化。 因此，这种组合形成被定义为微带的多层微波连接。 也可以使用其它多层结构，例如带状线。 通过利用多层微波连接来代替传统的电连接，高频输入源的阻抗可以更好地与光学器件匹配。