公开(公告)号：US08076746B2

公开(公告)日：2011-12-13

申请号：US12459121

申请日：2009-06-26

申请人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa ,  Eric G. Stevens ,  Hung Q. Doan ,  Robert M. Guidash

发明人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa ,  Eric G. Stevens ,  Hung Q. Doan ,  Robert M. Guidash

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/035272

摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.

摘要翻译： 背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。 第二导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。 第二导电类型的背面区域形成在传感器层的背面。 第一导电类型的多个前端光电检测器设置在传感器层中。 在与第二导电类型的区域的部分相邻的传感器层中形成有与多个前侧光电检测器分离的第一导电类型的不同多个背面光电检测器。 电压端子设置在传感器层的前侧。 第二导电类型的一个或多个连接区域设置在电压端子和背侧区域之间的传感器层的相应部分中，用于将电压端子电连接到背面区域。

公开(公告)号：US08018016B2

公开(公告)日：2011-09-13

申请号：US12492460

申请日：2009-06-26

申请人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa ,  Eric G. Stevens ,  Hung Q. Doan ,  Robert M. Guidash

发明人： John P. McCarten ,  Cristian A. Tivarus ,  Joseph R. Summa ,  Eric G. Stevens ,  Hung Q. Doan ,  Robert M. Guidash

IPC分类号： H01L31/101

CPC分类号： H01L27/14603 ,  H01L27/14605 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/035272

摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.

摘要翻译： 背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。 绝缘层设置在背面上。 电路层邻近前侧形成，使得传感器层位于电路层和绝缘层之间。 第二导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。 第二导电类型的背面区域形成在传感器层的背面。 第一导电类型的多个前端光电检测器设置在传感器层中。 在与第二导电类型的背侧区域的部分邻接的传感器层中形成有与多个前端光电检测器分离的第一导电类型的不同多个背面光电检测器。

公开(公告)号：US20100116971A1

公开(公告)日：2010-05-13

申请号：US12266764

申请日：2008-11-07

申请人： John P. McCarten ,  Joseph R. Summa ,  Cristian A. Tivarus ,  Todd J. Anderson ,  Eric G. Stevens

发明人： John P. McCarten ,  Joseph R. Summa ,  Cristian A. Tivarus ,  Todd J. Anderson ,  Eric G. Stevens

IPC分类号： H01L31/00 ,  H01L31/18

CPC分类号： H01L27/14643 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.

摘要翻译： 背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。 成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。 阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。 一个或多个侧孔可以横向邻近于每个光电检测器形成。 阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。

公开(公告)号：US08618458B2

公开(公告)日：2013-12-31

申请号：US12266764

申请日：2008-11-07

申请人： John P. McCarten ,  Joseph R. Summa ,  Cristian A. Tivarus ,  Todd J. Anderson ,  Eric G. Stevens

发明人： John P. McCarten ,  Joseph R. Summa ,  Cristian A. Tivarus ,  Todd J. Anderson ,  Eric G. Stevens

IPC分类号： H01L27/00

CPC分类号： H01L27/14643 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.

摘要翻译： 背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。 成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。 阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。 一个或多个侧孔可以横向邻近于每个光电检测器形成。 阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。

公开(公告)号：US20120080731A1

公开(公告)日：2012-04-05

申请号：US12894262

申请日：2010-09-30

申请人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

发明人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14645 ,  H01L27/14689

摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.

摘要翻译： 第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。 第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。 具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。 隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。 绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

公开(公告)号：US20120083067A1

公开(公告)日：2012-04-05

申请号：US12894281

申请日：2010-09-30

申请人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

发明人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

IPC分类号： H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/14607 ,  H01L27/1463

摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.

摘要翻译： 第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。 第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。 具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。 隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。 绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

公开(公告)号：US08378398B2

公开(公告)日：2013-02-19

申请号：US12966224

申请日：2010-12-13

申请人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

发明人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

摘要翻译： 浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。 浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。 第二电介质结构设置在钉扎层之上。 电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

公开(公告)号：US20120080733A1

公开(公告)日：2012-04-05

申请号：US12966224

申请日：2010-12-13

申请人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

发明人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14643

摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

摘要翻译： 浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。 浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。 第二电介质结构设置在钉扎层之上。 电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

公开(公告)号：US08101450B1

公开(公告)日：2012-01-24

申请号：US12966238

申请日：2010-12-13

申请人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

发明人： Hung Q. Doan ,  Eric G. Stevens ,  Robert M. Guidash

IPC分类号： H01L21/00 ,  H01L21/8238 ,  H01L21/176

CPC分类号： H01L27/14689 ,  H01L27/1463 ,  H01L27/14683

摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.

摘要翻译： 浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。 浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。 第二电介质结构设置在钉扎层之上。 电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

公开(公告)号：US20100148230A1

公开(公告)日：2010-06-17

申请号：US12332407

申请日：2008-12-11

申请人： Eric G. Stevens ,  Hung Q. Doan

发明人： Eric G. Stevens ,  Hung Q. Doan

IPC分类号： H01L21/762 ,  H01L31/112

CPC分类号： H01L27/14689 ,  H01L21/76224 ,  H01L27/1463

摘要： Trenches are formed in a substrate or layer and a solid source doped with one or more dopants is deposited over the image sensor such that the solid source fills the one or more trenches and is disposed on the surface of the substrate. The surface of the image sensor is then planarized so that the solid source remains only in the trenches. A thermal drive operation is performed to cause at least a portion of the one or more dopants in the solid source to diffuse into the portions of the substrate or layer that are immediately adjacent to and surround the sidewall and bottom surfaces of the trenches. The diffused dopant or dopants form passivation regions that passivate the interface between the substrate or layer and the sidewall and bottom surfaces of the trenches.

摘要翻译： 沟槽形成在衬底或层中，并且掺杂有一种或多种掺杂剂的固体源沉积在图像传感器上，使得固体源填充一个或多个沟槽并且设置在衬底的表面上。 然后将图像传感器的表面平坦化，使得固体源仅保留在沟槽中。 执行热驱动操作以使固体源中的一种或多种掺杂剂的至少一部分扩散到紧邻和围绕沟槽的侧壁和底表面的衬底或层的部分。 扩散掺杂剂或掺杂剂形成钝化区域，其钝化衬底或层与沟槽的侧壁和底表面之间的界面。