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公开(公告)号：US20090242950A1
公开(公告)日：2009-10-01
申请号：US12058845
申请日：2008-03-31
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/1469
摘要： A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.
摘要翻译： 垂直集成的图像传感器包括连接到支撑电路晶片的传感器晶片。 传感器晶片上的每个像素区域包括光电检测器，电荷 - 电压转换机构，用于将电荷从光电检测器传送到电荷 - 电压转换机构的传送机构，以及用于将电荷 - 电压转换机构。 支持电路晶片包括用于传感器晶片上的每个像素区域的放大器和其它支持电路。 晶片间连接器将传感器晶片上的每个电荷 - 电压机构直接连接到支撑电路晶片上的相应的栅极到放大器。
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公开(公告)号：US07858915B2
公开(公告)日：2010-12-28
申请号：US12058845
申请日：2008-03-31
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14687 , H01L27/1469
摘要： A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.
摘要翻译： 垂直集成的图像传感器包括连接到支撑电路晶片的传感器晶片。 传感器晶片上的每个像素区域包括光电检测器，电荷 - 电压转换机构，用于将电荷从光电检测器传送到电荷 - 电压转换机构的传送机构，以及用于将电荷 - 电压转换机构。 支持电路晶片包括用于传感器晶片上的每个像素区域的放大器和其它支持电路。 晶片间连接器将传感器晶片上的每个电荷 - 电压机构直接连接到支撑电路晶片上的相应的栅极到放大器。
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3.发明授权Back-illuminated image sensors having both frontside and backside photodetectors 有权具有前侧和后侧光电检测器的背照式图像传感器公开(公告)号：US08076746B2
公开(公告)日：2011-12-13
申请号：US12459121
申请日：2009-06-26
申请人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
发明人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14647 , H01L27/14687 , H01L27/14689 , H01L31/035272
摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.
摘要翻译： 背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。 第二导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。 第二导电类型的背面区域形成在传感器层的背面。 第一导电类型的多个前端光电检测器设置在传感器层中。 在与第二导电类型的区域的部分相邻的传感器层中形成有与多个前侧光电检测器分离的第一导电类型的不同多个背面光电检测器。 电压端子设置在传感器层的前侧。 第二导电类型的一个或多个连接区域设置在电压端子和背侧区域之间的传感器层的相应部分中，用于将电压端子电连接到背面区域。
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4.发明授权Back-illuminated image sensors having both frontside and backside photodetectors 有权具有前侧和后侧光电检测器的背照式图像传感器公开(公告)号：US08018016B2
公开(公告)日：2011-09-13
申请号：US12492460
申请日：2009-06-26
申请人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
发明人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
IPC分类号： H01L31/101
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14632 , H01L27/1464 , H01L27/14647 , H01L27/14687 , H01L27/14689 , H01L31/035272
摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.
摘要翻译： 背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。 绝缘层设置在背面上。 电路层邻近前侧形成，使得传感器层位于电路层和绝缘层之间。 第二导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。 第二导电类型的背面区域形成在传感器层的背面。 第一导电类型的多个前端光电检测器设置在传感器层中。 在与第二导电类型的背侧区域的部分邻接的传感器层中形成有与多个前端光电检测器分离的第一导电类型的不同多个背面光电检测器。
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公开(公告)号：US08618458B2
公开(公告)日：2013-12-31
申请号：US12266764
申请日：2008-11-07
IPC分类号： H01L27/00
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
摘要翻译： 背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。 成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。 阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。 一个或多个侧孔可以横向邻近于每个光电检测器形成。 阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。
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公开(公告)号：US20100060764A1
公开(公告)日：2010-03-11
申请号：US12206919
申请日：2008-09-09
IPC分类号： H04N5/335
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14636 , H01L27/14641
摘要： An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.
摘要翻译： 图像传感器包括（a）第一晶片，具有（i）感光区域; （ii）电荷 - 电压转换区域; （b）第二晶片，具有（i）第一放大器，其接收来自所述电荷/电压转换区域的信号; （c）将电荷 - 电压转换区域连接到放大器的输入端的电互连; （d）至少部分地包围电互连的至少一部分的电偏置屏蔽。
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7.发明申请STACKED IMAGE SENSOR WITH SHARED DIFFUSION REGIONS IN RESPECTIVE DROPPED PIXEL POSITIONS OF A PIXEL ARRAY 有权具有共享扩散区域的堆叠图像传感器在像素阵列的相关丢弃像素位置公开(公告)号：US20090230287A1
公开(公告)日：2009-09-17
申请号：US12049579
申请日：2008-03-17
IPC分类号： H01L27/00
CPC分类号： H01L27/14634 , G02B3/0056 , G02B5/201 , H01L27/14603 , H01L27/14621 , H01L27/14636 , H01L27/14645 , H01L27/1469 , H04N5/37457 , H04N9/045
摘要： A CMOS image sensor or other type of image sensor comprises a sensor wafer and an underlying circuit wafer. The sensor wafer comprises a plurality of photosensitive elements arranged in respective positions of a two-dimensional array of positions in which a subset of the array positions do not include photosensitive elements but instead include diffusion regions each of which is shared by two or more of the photosensitive elements. The sensor wafer is interconnected with the circuit wafer utilizing a plurality of inter-wafer interconnects coupled to respective ones of the shared diffusion regions in respective ones of the array positions that do not include photosensitive elements. The image sensor may be implemented in a digital camera or other type of image capture device.
摘要翻译： CMOS图像传感器或其他类型的图像传感器包括传感器晶片和底层电路晶片。 传感器晶片包括布置在二维阵列阵列的相应位置的多个光敏元件，其中阵列位置的子集不包括光敏元件，而是包括扩散区域，每个扩散区域由两个或更多个 光敏元件。 传感器晶片与电路晶片互连，利用多个晶片间互连，其耦合到不包括光敏元件的相应阵列位置中的相应一个共用扩散区。 图像传感器可以在数字照相机或其他类型的图像捕获装置中实现。
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公开(公告)号：US07965329B2
公开(公告)日：2011-06-21
申请号：US12206919
申请日：2008-09-09
IPC分类号： H04N5/335
CPC分类号： H01L27/14634 , H01L27/14609 , H01L27/14636 , H01L27/14641
摘要： An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.
摘要翻译： 图像传感器包括（a）第一晶片，具有（i）感光区域; （ii）电荷 - 电压转换区域; （b）第二晶片，具有（i）第一放大器，其接收来自所述电荷/电压转换区域的信号; （c）将电荷 - 电压转换区域连接到放大器的输入端的电互连; （d）至少部分地包围电互连的至少一部分的电偏置屏蔽。
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9.发明授权Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array 有权具有在像素阵列的各个丢弃的像素位置中的共享扩散区域的堆叠图像传感器公开(公告)号：US07781716B2
公开(公告)日：2010-08-24
申请号：US12049579
申请日：2008-03-17
CPC分类号： H01L27/14634 , G02B3/0056 , G02B5/201 , H01L27/14603 , H01L27/14621 , H01L27/14636 , H01L27/14645 , H01L27/1469 , H04N5/37457 , H04N9/045
摘要： A CMOS image sensor or other type of image sensor comprises a sensor wafer and an underlying circuit wafer. The sensor wafer comprises a plurality of photosensitive elements arranged in respective positions of a two-dimensional array of positions in which a subset of the array positions do not include photosensitive elements but instead include diffusion regions each of which is shared by two or more of the photosensitive elements. The sensor wafer is interconnected with the circuit wafer utilizing a plurality of inter-wafer interconnects coupled to respective ones of the shared diffusion regions in respective ones of the array positions that do not include photosensitive elements. The image sensor may be implemented in a digital camera or other type of image capture device.
摘要翻译： CMOS图像传感器或其他类型的图像传感器包括传感器晶片和底层电路晶片。 传感器晶片包括布置在二维阵列阵列的相应位置的多个光敏元件，其中阵列位置的子集不包括光敏元件，而是包括扩散区域，每个扩散区域由两个或更多个 光敏元件。 传感器晶片与电路晶片互连，利用多个晶片间互连，其耦合到不包括光敏元件的相应阵列位置中的相应一个共用扩散区。 图像传感器可以在数字照相机或其他类型的图像捕获装置中实现。
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公开(公告)号：US20100116971A1
公开(公告)日：2010-05-13
申请号：US12266764
申请日：2008-11-07
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
摘要翻译： 背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。 成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。 阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。 一个或多个侧孔可以横向邻近于每个光电检测器形成。 阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。
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