公开(公告)号：US20110186747A1

公开(公告)日：2011-08-04

申请号：US13028188

申请日：2011-02-15

Applicant: John Ruffell

Inventor： John Ruffell

IPC: H01J3/32 ,  H01J3/30 ,  H01J3/34

CPC classification number: H01L21/68764 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/1503 ,  H01J2237/20207 ,  H01J2237/30472 ,  H01L21/68771

Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

Abstract translation: 离子注入装置的系统和方法包括用于沿入射束轴产生离子束的离子源。 离子注入装置包括耦合到旋转机构的光束偏转组件，其使射束偏转组件围绕入射光束轴线旋转并偏转离子束。 至少一个晶片保持器保持目标晶片，并且旋转机构操作以将离子束引导至至少一个晶片保持器中的一个，其也旋转以保持恒定的注入角度。

公开(公告)号：US06555832B1

公开(公告)日：2003-04-29

申请号：US09686092

申请日：2000-10-12

Applicant: Geoffrey Ryding ,  Theodore H. Smick ,  John Ruffell ,  Marvin Farley ,  Peter Rose

Inventor： Geoffrey Ryding ,  Theodore H. Smick ,  John Ruffell ,  Marvin Farley ,  Peter Rose

IPC: H01J37317

CPC classification number: H01J37/1471 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/1501

Abstract: A back scattered ion receiver is mounted on the process chamber of an ion implanter to receive beam ions back scattered from a wafer mounted on the wafer holder in the chamber. Minima in the intensity of back scattered ions as the wafer on the holder is moved relative to the beam direction, can be used to obtain an accurate calibration of the true beam direction. Beam direction error can then be compensated for when operating holder tilt and twist mechanisms so as to bring a process wafer accurately into the required orientation relative to the true beam. If the crystallographic alignment and orientation of process wafers has been precharacterised, this data can be used to control the wafer holder to align process wafers crystallographically to the process beam.

Abstract translation: 背散射离子接收器安装在离子注入机的处理室中，以接收从安装在腔室中的晶片保持器上的晶片反向散射的束离子。 在保持器上的晶片相对于光束方向移动时，背散射离子的强度的最小值可用于获得真正的光束方向的精确校准。 然后可以在操作支架倾斜和扭转机构时补偿光束方向误差，以便使处理晶片相对于真实光束精确地进入所需的方向。 如果处理晶片的晶体取向和取向已经被预先表征，则该数据可用于控制晶片保持器以将工艺晶片在晶体学上与工艺光束对准。

公开(公告)号：US06525327B1

公开(公告)日：2003-02-25

申请号：US09686803

申请日：2000-10-12

Applicant: Robert John Clifford Mitchell ,  Michael T. Wauk ,  John Ruffell ,  Hilton Glavish ,  Peter Kindersley

Inventor： Robert John Clifford Mitchell ,  Michael T. Wauk ,  John Ruffell ,  Hilton Glavish ,  Peter Kindersley

IPC: H01J37304

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/24405

Abstract: A beam stop (23) has a charge collecting member (40) which extends in the direction of scanning of a scanned beam by less than the total distance scanned, so that variation in the charge signal derived from the collecting member can provide a timing signal for use in monitoring alignment of the scanned beam. In a preferred embodiment, the beam stop plate (42) has slits (65-69) leading to apertures (60-64) containing charge collecting rods (73-75) located within the thickness of the beam stop plate (42).

Abstract translation: 光束停止器（23）具有电荷收集构件（40），该电荷收集构件（40）沿着扫描的扫描方向延伸小于扫描的总距离，从而从收集构件得到的电荷信号的变化可以提供定时信号 用于监视扫描光束的对准。 在优选实施例中，光束挡板（42）具有通向位于光束挡板（42）的厚度内的电荷收集棒（73-75）的孔（60-64）的狭缝（65-69）。

公开(公告)号：US06179921B2

公开(公告)日：2001-01-30

申请号：US09294258

申请日：1999-04-19

Applicant: John Ruffell ,  Karl F. Leeser

Inventor： John Ruffell ,  Karl F. Leeser

IPC: C23C1600

CPC classification number: H01L21/67017 ,  H01L21/67103 ,  Y10T137/86895

Abstract: An apparatus for a wafer processing system comprising a wafer support chuck attached to a gas delivery system for delivery of a gas to the backside of a wafer supported by the chuck. The gas delivery system has a gas shutoff valve directly connected to the wafer chuck. The shutoff valve provides a positive shutoff with negligible leak rate. By placing the valve in close proximity to the wafer chuck, the volume of the backside gas trapped between the valve and the wafer is minimized. Release of this trapped gas into the process chamber during wafer transfer has no adverse impact on the performance of the processing system.

Abstract translation: 一种用于晶片处理系统的装置，包括附接到气体输送系统的晶片支撑卡盘，用于将气体输送到由卡盘支撑的晶片的背面。 气体输送系统具有直接连接到晶片卡盘的气体截止阀。 截止阀提供了可忽略的泄漏率的正关闭。 通过将阀放置在靠近晶片卡盘的位置，捕获在阀和晶片之间的背侧气体的体积最小化。 在晶片转印期间将这种被捕获的气体释放到处理室中对处理系统的性能没有不利影响。

公开(公告)号：US08399851B2

公开(公告)日：2013-03-19

申请号：US13028190

申请日：2011-02-15

Applicant: John Ruffell

Inventor： John Ruffell

IPC: H01J3/18 ,  H01J3/26 ,  H01J3/14 ,  H01J37/256

CPC classification number: H01L21/68764 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/1503 ,  H01J2237/20207 ,  H01J2237/30472 ,  H01L21/68771

Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

Abstract translation: 离子注入装置的系统和方法包括用于沿入射束轴产生离子束的离子源。 离子注入装置包括耦合到旋转机构的光束偏转组件，其使射束偏转组件围绕入射光束轴线旋转并偏转离子束。 至少一个晶片保持器保持目标晶片，并且旋转机构操作以将离子束引导至至少一个晶片保持器中的一个，其也旋转以保持恒定的注入角度。

公开(公告)号：US20110186743A1

公开(公告)日：2011-08-04

申请号：US13028190

申请日：2011-02-15

Applicant: John Ruffell

Inventor： John Ruffell

IPC: H01J3/18 ,  H01J3/26

CPC classification number: H01L21/68764 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/1503 ,  H01J2237/20207 ,  H01J2237/30472 ,  H01L21/68771

Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

公开(公告)号：US06350097B1

公开(公告)日：2002-02-26

申请号：US09293939

申请日：1999-04-19

Applicant: Robert J. C. Mitchell ,  Keith D. Relleen ,  John Ruffell

Inventor： Robert J. C. Mitchell ,  Keith D. Relleen ,  John Ruffell

IPC: B65G4907

CPC classification number: H01L21/67213 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707 ,  Y10S414/139 ,  Y10S414/141

Abstract: An apparatus for processing wafers one at a time. The apparatus has a vacuum chamber 1 into which wafers are loaded through a pair of loadlocks 3, 4 which are spaced one above the other. A robot within the vacuum chamber 1 has a pair of gripper arms 22, 29 which are moveable along and rotatable about a vertical axis 23 so as to be moveable between the loadlocks 3, 4 and a wafer processing position. Each of the loadlocks 3, 4 has a vertically moveable portion 8, 26 which is moveable away from the remainder of the loadlock to provide access in a horizontal plane for one of the gripper arms 22, 29.

Abstract translation: 一次一个处理晶片的装置。 该装置具有真空室1，通过一对彼此间隔开的一对装载锁3,4，装载有晶片。 真空室1内的机器人具有一对夹持臂22,29，它们能够沿竖直轴线23移动并且可绕垂直轴线23旋转，以便在装载锁3,4和晶片加工位置之间可移动。 每个装载锁3,4具有可垂直移动的部分8,26，其可移动离开负载锁的其余部分，以在夹持臂22,29之一的水平平面内提供通路。

公开(公告)号：US08481959B2

公开(公告)日：2013-07-09

申请号：US13028188

申请日：2011-02-15

Applicant: John Ruffell

Inventor： John Ruffell

IPC: H01J37/256 ,  H01J3/14 ,  H01J3/18 ,  H01J3/26

CPC classification number: H01L21/68764 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/1503 ,  H01J2237/20207 ,  H01J2237/30472 ,  H01L21/68771

Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

Abstract translation: 离子注入装置的系统和方法包括用于沿入射束轴产生离子束的离子源。 离子注入装置包括耦合到旋转机构的光束偏转组件，其使射束偏转组件围绕入射光束轴线旋转并偏转离子束。 至少一个晶片保持器保持目标晶片，并且旋转机构操作以将离子束引导到至少一个晶片保持器中的一个，其也旋转以保持恒定的注入角度。

公开(公告)号：US20110186748A1

公开(公告)日：2011-08-04

申请号：US13059229

申请日：2009-08-17

Applicant: John Ruffell

Inventor： John Ruffell

IPC: H01J3/14 ,  H01L21/265

CPC classification number: H01L21/68764 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/049 ,  H01J2237/057 ,  H01J2237/1503 ,  H01J2237/20207 ,  H01J2237/30472 ,  H01L21/68771

Abstract: Systems and methods of an ion implant apparatus include an ion source for producing an ion beam along an incident beam axis. The ion implant apparatus includes a beam deflecting assembly coupled to a rotation mechanism that rotates the beam deflecting assembly about the incident beam axis and deflects the ion beam. At least one wafer holder holds target wafers and the rotation mechanism operates to direct the ion beam at one of the at least one wafer holders which also rotates to maintain a constant implant angle.

公开(公告)号：US06679675B2

公开(公告)日：2004-01-20

申请号：US09996805

申请日：2001-11-30

Applicant: Robert J. C. Mitchell ,  Keith D. Relleen ,  John Ruffell

Inventor： Robert J. C. Mitchell ,  Keith D. Relleen ,  John Ruffell

IPC: B65G4907

CPC classification number: H01L21/67213 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707 ,  Y10S414/139 ,  Y10S414/141

Abstract: An apparatus for processing wafers one at a time. The apparatus has a vacuum chamber 1 into which wafers are loaded through a pair of loadlocks 3, 4 which are spaced one above the other. A robot within the vacuum chamber 1 has a pair of gripper arms 22, 29 which are moveable along and rotatable about a vertical axis 23 so as to be moveable between the loadlocks 3, 4 and a wafer processing position. Each of the loadlocks 3, 4 has a vertically moveable portion 8, 26 which is moveable away from the remainder of the loadlock to provide access in a horizontal plane for one of the gripper arms 22, 29.

Abstract translation: 一次一个处理晶片的装置。 该装置具有真空室1，通过一对彼此间隔开的一对装载锁3,4，装载有晶片。 真空室1内的机器人具有一对夹持臂22,29，它们能够沿竖直轴线23移动并且可绕垂直轴线23旋转，以便在装载锁3,4和晶片加工位置之间可移动。 每个装载锁3,4具有可垂直移动的部分8,26，其可移动离开负载锁的其余部分，以在夹持臂22,29之一的水平平面内提供通路。