公开(公告)号：US08253890B2

公开(公告)日：2012-08-28

申请号：US11542159

申请日：2006-10-04

申请人： John Z. Z. Zhong ,  Willem den Boer

发明人： John Z. Z. Zhong ,  Willem den Boer

IPC分类号： G02F1/1335

CPC分类号： H01L29/78636 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2202/42 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/14603 ,  H01L29/66765

摘要： A high aperture active matrix liquid crystal display (AMLCD) includes pixel electrodes in respective pixels which overlap adjacent address lines. The color filters are formed on the active substrate in a manner such that the filters also overlap the address lines and function as an insulating layer between the pixel electrodes and address lines in the areas of overlap. Accordingly, line-pixel capacitances are reduced and the resulting AMLCD is easier to manufacture. The total number of process step in manufacturing is reduced, and plate-to-plate (active to passive plate) alignment is much easier and less important.

摘要翻译： 高孔径有源矩阵液晶显示器（AMLCD）包括与相邻地址线重叠的各像素中的像素电极。 滤色器以有效的方式形成在有源基板上，使得滤光片也与地址线重叠，并且在重叠区域中的像素电极和地址线之间用作绝缘层。 因此，线像素电容减少，并且所得到的AMLCD更容易制造。 制造过程中的步骤总数减少，板对板（主动到被动板）对准要容易得多，不太重要。

公开(公告)号：US07445948B2

公开(公告)日：2008-11-04

申请号：US10052772

申请日：2002-01-23

申请人： Willem den Boer ,  John Z. Z. Zhong

发明人： Willem den Boer ,  John Z. Z. Zhong

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

公开(公告)号：US08198110B2

公开(公告)日：2012-06-12

申请号：US12285780

申请日：2008-10-14

申请人： Willem Den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem Den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

公开(公告)号：US06372534B1

公开(公告)日：2002-04-16

申请号：US08630984

申请日：1996-04-12

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： H01L2100

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

公开(公告)号：US06307215B1

公开(公告)日：2001-10-23

申请号：US09357889

申请日：1999-07-21

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： H01L3120

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

公开(公告)号：US6124606A

公开(公告)日：2000-09-26

申请号：US7177

申请日：1998-01-14

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu ,  Young H. Byun ,  Steven Aggas

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu ,  Young H. Byun ,  Steven Aggas

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14603 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2202/42

摘要： This invention is related to a radiation imager (e.g. x-ray imager) and method of making same. An insulating material having a low dielectric constant is provided in areas of overlap between collector electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The TFT array and corresponding imager are made in certain embodiments by coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing storage capacitor collecting electrodes over the insulating layer so that the collecting electrodes contact TFT source electrodes through the contact vias. The resulting imager has an improved signal-to-noise ratio due to the low dielectric constant of the insulating layer.

摘要翻译： 本发明涉及辐射成像仪（例如，x射线成像仪）及其制造方法。 在集电极和下面的TFT，二极管和/或地址线之间的重叠区域中提供具有低介电常数的绝缘材料，以便提高成像器的信噪比。 在某些实施例中，TFT阵列和相应的成像器是通过用作为负光刻胶的可光刻绝缘层涂敷地址线和TFT来形成的，用紫外光曝光绝缘层的部分，去除绝缘层的未曝光区域 以形成接触通孔，并且在绝缘层上沉积存储电容器集电极，使得集电极通过接触通孔接触TFT源电极。 所得到的成像器由于绝缘层的低介电常数而具有改善的信噪比。

公开(公告)号：US6008872A

公开(公告)日：1999-12-28

申请号：US41743

申请日：1998-03-13

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Vijayen S. Veerasamy ,  Yiwei Lu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Vijayen S. Veerasamy ,  Yiwei Lu

IPC分类号： G02F1/1335 ,  G02F1/1362 ,  G02F1/1365

CPC分类号： G02F1/133514 ,  G02F1/1365 ,  G09G3/367 ,  G02F1/136209 ,  G02F1/136227 ,  G09G2300/0895

摘要： A backlit transmissive liquid crystal display including non-linear resistive thin film diodes (TFDs). Select address lines on the active substrate provide both conventional address line functionality, as well as acting as one of the electrodes for each thin film diode. Two such diodes are provided in each pixel in certain embodiments. Still further, black matrix material is provided between the aforesaid address line material and the substrate so as to form rows of stacks on the active substrate. The thin film diode semi-insulating material, the address line material, and the black matrix material are patterned together in a single step to form elongated rows (or columns) on the active substrate. In such a manner, the display has reduced ambient light reflections, and reduce photosensitivity. Furthermore, because the pixel electrode, which also functions as the top TFD electrode in each pixel, overlaps both the select lines and portions of the color filter, a high pixel aperture ratio of at least about 70% is provided. The TFDs may be MIM diodes in certain embodiments.

公开(公告)号：US5994721A

公开(公告)日：1999-11-30

申请号：US908803

申请日：1997-08-08

申请人： John Z. Z. Zhong ,  Willem den Boer

发明人： John Z. Z. Zhong ,  Willem den Boer

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376

CPC分类号： H01L29/78636 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/14603 ,  H01L29/66765 ,  G02F1/1368 ,  G02F2202/42

摘要： A high aperture active matrix liquid crystal display (AMLCD) includes pixel electrodes in respective pixels which overlap adjacent address lines. The color filters are formed on the active substrate in a manner such that the filters also overlap the address lines and function as an insulating layer between the pixel electrodes and address lines in the areas of overlap. Accordingly, line-pixel capacitances are reduced and the resulting AMLCD is easier to manufacture. The total number of process step in manufacturing is reduced, and plate-to-plate (active to passive plate) alignment is much easier and less important.

公开(公告)号：US5780871A

公开(公告)日：1998-07-14

申请号：US832345

申请日：1997-04-02

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606

摘要： This invention is related to an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines. Both the manufacturability and capacitive cross-talk of the TFT-based device are improved due to the use of a photo-imageable insulating layer between the pixel electrodes and the address lines.

摘要翻译： 本发明涉及具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。 由于在像素电极和地址线之间使用可光致抗蚀绝缘层，TFT器件的可制造性和电容性串扰都得到改善。

公开(公告)号：US06365916B1

公开(公告)日：2002-04-02

申请号：US09356302

申请日：1999-07-16

申请人： John Z. Z. Zhong ,  Willem den Boer

发明人： John Z. Z. Zhong ,  Willem den Boer

IPC分类号： H01L3112

CPC分类号： H01L29/78636 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2202/42 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/14603 ,  H01L29/66765

摘要： A high aperture active matrix liquid crystal display (AMLCD) includes pixel electrodes in respective pixels which overlap adjacent address lines. The color filters are formed on the active substrate in a manner such that the filters also overlap the address lines and function as an insulating layer between the pixel electrodes and address lines in the areas of overlap. Accordingly, line-pixel capacitances are reduced and the resulting AMLCD is easier to manufacture. The total number of process step in manufacturing is reduced, and plate-to-plate (active to passive plate) alignment is much easier and less important.