Conveying information to an interrogator using resonant and parasitic radio frequency circuits
    1.
    发明申请
    Conveying information to an interrogator using resonant and parasitic radio frequency circuits 审中-公开
    使用谐振和寄生射频电路将信息传送给询问器

    公开(公告)号:US20060009288A1

    公开(公告)日:2006-01-12

    申请号:US10887055

    申请日:2004-07-07

    IPC分类号: A63F13/00

    摘要: A method of conveying information to an interrogator includes the interrogator sensing the presence of a resonant radio frequency circuit that is tuned to a first resonant frequency. Responsive to a parasitic radio frequency circuit being brought to within a parasitic coupling distance of the resonant radio frequency circuit, the interrogator senses a shift in the resonant frequency of the resonant radio frequency circuit, wherein the shift in the resonant frequency conveys information to the interrogator

    摘要翻译: 向询问器传送信息的方法包括询问器,感测谐振射频电路的调谐到第一共振频率的存在。 响应于在谐振射频电路的寄生耦合距离内的寄生射频电路,询问器感测谐振射频电路的谐振频率的偏移,其中谐振频率的偏移将信息传递给询问器

    Methods and memory structures using tunnel-junction device as control element
    5.
    发明申请
    Methods and memory structures using tunnel-junction device as control element 失效
    使用隧道结装置作为控制元件的方法和记忆结构

    公开(公告)号:US20060262627A1

    公开(公告)日:2006-11-23

    申请号:US11494397

    申请日:2006-07-26

    IPC分类号: G11C17/18

    摘要: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A reference element comprising a tunnel-junction device may be used with a current source to fuse a memory storage element without fusing a tunnel-junction device of an associated control element. Methods of making the memory structure and using it in electronic devices are disclosed.

    摘要翻译: 存储器结构包括电耦合到控制元件的存储器存储元件。 控制元件包括隧道连接装置。 存储器存储元件还可以包括隧道连接装置。 公开了一种用于熔接存储器存储元件的隧道结器件而不熔接相关控制元件的隧道结器件的方法。 存储器存储元件可以具有大于控制元件的有效横截面面积的有效横截面面积。 包括隧道结结器件的参考元件可以与电流源一起使用,以熔化存储器存储元件而不熔合相关联的控制元件的隧道连接器件。 公开了在电子设备中制作存储器结构并将其使用的方法。

    Memory array
    6.
    发明申请
    Memory array 失效
    内存阵列

    公开(公告)号:US20050167787A1

    公开(公告)日:2005-08-04

    申请号:US10772945

    申请日:2004-02-04

    IPC分类号: H01L27/10 H01L23/58

    CPC分类号: H01L27/101

    摘要: A memory array has a multiplicity of row conductors and a multiplicity of column conductors, the row conductors and column conductors being arranged to cross at cross-points, and has a memory cell disposed at each cross-point, each memory cell having a storage element and a control element coupled in series between a row conductor and a column conductor, and each control element including a silicon-rich insulator. Methods for fabricating the memory array are disclosed.

    摘要翻译: 存储器阵列具有多个行导体和多个列导体,行导体和列导体布置成在交叉点处交叉,并且具有设置在每个交叉点处的存储单元,每个存储单元具有存储元件 以及串联耦合在行导体和列导体之间的控制元件,并且每个控制元件包括富硅绝缘体。 公开了制造存储器阵列的方法。

    Methods and memory structures using tunnel-junction device as control element

    公开(公告)号:US07130207B2

    公开(公告)日:2006-10-31

    申请号:US10756661

    申请日:2004-01-12

    IPC分类号: G11C5/02

    摘要: A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A memory structure comprises a memory storage element, a control element comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element. The reference element is configured as a reference to protect the control element when selectively controlling the state of the memory storage element. The reference element may comprise a tunnel-junction device and be used with a current source to fuse a memory storage element without fusing a tunnel-junction device of an associated control element. Methods of making the memory structure and using it in electronic devices are disclosed.