摘要:
A method of conveying information to an interrogator includes the interrogator sensing the presence of a resonant radio frequency circuit that is tuned to a first resonant frequency. Responsive to a parasitic radio frequency circuit being brought to within a parasitic coupling distance of the resonant radio frequency circuit, the interrogator senses a shift in the resonant frequency of the resonant radio frequency circuit, wherein the shift in the resonant frequency conveys information to the interrogator
摘要:
A two-terminal electronic isolation device has an anode, a cathode, an integral tunnel junction, and a current-injection layer. The current-injection layer comprises a silicon-rich oxide.
摘要:
Apparatus and method for making a multi-layered storage structure includes forming a device layer on a single-crystal wafer, cleaving the device layer from the wafer, repeating the forming and cleaving to provide a plurality of cleaved device layers, and bonding the cleaved device layers together to form the multi-layered storage structure.
摘要:
A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A reference element comprising a tunnel-junction device may be used with a current source to fuse a memory storage element without fusing a tunnel-junction device of an associated control element. Methods of making the memory structure and using it in electronic devices are disclosed.
摘要:
A memory array has a multiplicity of row conductors and a multiplicity of column conductors, the row conductors and column conductors being arranged to cross at cross-points, and has a memory cell disposed at each cross-point, each memory cell having a storage element and a control element coupled in series between a row conductor and a column conductor, and each control element including a silicon-rich insulator. Methods for fabricating the memory array are disclosed.
摘要:
A memory structure includes a memory storage element electrically coupled to a control element. The control element comprises a tunnel-junction device. The memory storage element may also comprise a tunnel-junction device. Methods for fusing a tunnel-junction device of a memory storage element without fusing a tunnel-junction device of an associated control element are disclosed. The memory storage element may have an effective cross-sectional area that is greater than an effective cross-sectional area of the control element. A memory structure comprises a memory storage element, a control element comprising a tunnel-junction device electrically coupled to the memory storage element and configured to control the state of the memory storage element, and a reference element. The reference element is configured as a reference to protect the control element when selectively controlling the state of the memory storage element. The reference element may comprise a tunnel-junction device and be used with a current source to fuse a memory storage element without fusing a tunnel-junction device of an associated control element. Methods of making the memory structure and using it in electronic devices are disclosed.
摘要:
A memory storage device includes a memory cell configurable to have at least a first conductive state and includes a first and second conductor each electrically coupled to the memory cell. A regulation circuit is configured to regulate a sense voltage on the second conductor to be independent of a current conducted through the first conductor when the memory cell is configured to have the first conductive state.
摘要:
Embodiments of the present invention provide a memory device. In one embodiment, the memory device comprises an array of memory cells configured to provide resistive states, a read circuit configured to sense the resistive states and a resistor. The resistor is configured to provide a resistance to the read circuit that is configured to select the resistor and sense the resistance to test the read circuit.