Method of fabricating nanoimprint mold
    1.
    发明申请
    Method of fabricating nanoimprint mold 有权
    制造纳米压印模具的方法

    公开(公告)号:US20070128549A1

    公开(公告)日:2007-06-07

    申请号:US11505395

    申请日:2006-08-17

    IPC分类号: G03C5/00

    摘要: Provided is a method of fabricating a nanoimprint mold which can form sub-100 nm fine pattern structures. The method includes forming patterns on a first substrate using an E-beam lithography (EBL) process, and transferring the patterns formed on the first substrate to a second substrate using a nanoimprint lithography (NIL) process to complete an NIL mold. Accordingly, the method can easily fabricate the nanoimprint mold at low costs on a quartz or glass substrate, which is not suitable for an EBL process to produce sub-100 nm patterns, by utilizing the advantages of the EBL process with a resolution of tens of nanometers.

    摘要翻译: 提供一种制造能够形成亚100nm精细图案结构的纳米压印模具的方法。 该方法包括使用电子束光刻(EBL)工艺在第一衬底上形成图案,并使用纳米压印光刻(NIL)工艺将形成在第一衬底上的图案转移到第二衬底以完成NIL模具。 因此,该方法可以容易地在石英或玻璃基板上以低成本制造纳米压印模具,其不适用于生产亚100nm图案的EBL工艺,通过利用具有数十个分辨率的EBL工艺的优点 纳米。

    Compound for molecular electronic device having thiol anchoring group, method of synthesizing the compound, and molecular electronic device having molecular active layer obtained from the compound
    2.
    发明申请
    Compound for molecular electronic device having thiol anchoring group, method of synthesizing the compound, and molecular electronic device having molecular active layer obtained from the compound 失效
    具有硫醇锚定基团的分子电子器件的化合物,合成该化合物的方法,以及由该化合物获得的具有分子活性层的分子电子器件

    公开(公告)号:US20070120121A1

    公开(公告)日:2007-05-31

    申请号:US11602982

    申请日:2006-11-22

    IPC分类号: H01L29/08

    摘要: Provided are a compound for a molecular electronic device which includes a terpyridine-ruthenium organic metal compound including a thiol anchoring group of the formula below, a method of synthesizing the compound and a molecular electronic device including a molecular active layer obtained from the compound. In the formula, R1 and R2 are each a thioacetyl group or a hydrogen atom, at least one of R1 and R2 is a thioacetyl group, and m and n are each integers from 0 to 20. The molecular active layer, which is formed by self-assembling the compound on an electrode surface, composes a switching element and a memory element.

    摘要翻译: 本发明提供一种分子电子器件的化合物,其包括三联吡啶 - 钌有机金属化合物,其包含下式的硫醇锚定基团,合成该化合物的方法和包含由该化合物获得的分子活性层的分子电子器件。 在该式中,R 1和R 2各自为硫代乙酰基或氢原子,R 1和R 2中的至少一个 > 2是硫代乙酰基,m和n各自为0〜20的整数。通过在电极表面上自组装化合物形成的分子活性层构成开关元件和存储元件 。

    Molecular electronic device having organic conducting electrode as protective layer
    3.
    发明申请
    Molecular electronic device having organic conducting electrode as protective layer 审中-公开
    具有有机导电电极作为保护层的分子电子器件

    公开(公告)号:US20070176629A1

    公开(公告)日:2007-08-02

    申请号:US11589812

    申请日:2006-10-31

    IPC分类号: H03K19/173

    摘要: Provide is a molecular electronic device which includes a first electrode, a molecular active layer self-assembled on the first electrode using a thiol-based anchoring group or a silane-based anchoring group, and a second electrode including an organic electrode layer covering the molecular active layer. The organic electrode layer includes a highly conductive monomer, an oligomer or a polymer. The molecular active layer composes a switching element which is mutually switchable to states of ON and OFF according to voltages applied between the first electrode and the second electrode, and a memory element in which a predetermined electric signal is stored according to voltages applied between the first electrode and the second electrode.

    摘要翻译: 提供一种分子电子器件,其包括第一电极,使用硫醇基锚定基团或硅烷基锚定基团自组装在第一电极上的分子活性层,以及包括覆盖分子的有机电极层的第二电极 活动层 有机电极层包括高导电性单体,低聚物或聚合物。 分子活性层构成开关元件,该开关元件根据施加在第一电极和第二电极之间的电压相互切换为ON和OFF的状态,以及存储元件,其中根据施加在第一电极和第二电极之间的电压存储预定电信号 电极和第二电极。

    Electrostatic protection device for semiconductor device
    4.
    发明申请
    Electrostatic protection device for semiconductor device 审中-公开
    半导体器件用静电保护器件

    公开(公告)号:US20060215344A1

    公开(公告)日:2006-09-28

    申请号:US11373950

    申请日:2006-03-13

    申请人: Nak Choi

    发明人: Nak Choi

    IPC分类号: H02H7/20

    CPC分类号: H01L27/0255

    摘要: Disclosed is an electrostatic protection device for a semiconductor device. The electrostatic protection device includes a transfer unit for transferring static electricity introduced through an input/output port to an external voltage line and outputting a first voltage caused by the static electricity, a driver connected between the first voltage and a grounding voltage line, and a discharge unit connected between the external voltage line and the grounding voltage line so as to be driven based on the output of the driver, wherein the driver is turned on by the static electricity transferred to the external voltage line.

    摘要翻译: 公开了一种用于半导体器件的静电保护装置。 静电保护装置包括用于将通过输入/输出端口引入的静电传递到外部电压线并输出由静电引起的第一电压的转移单元,连接在第一电压和接地电压线之间的驱动器,以及 连接在外部电压线和接地电压线之间的放电单元,以便基于驱动器的输出被驱动,其中通过传递到外部电压线的静电来驱动驱动器。

    Electrostatic discharge protection circuit protecting thin gate insulation layers in a semiconductor device
    6.
    发明申请
    Electrostatic discharge protection circuit protecting thin gate insulation layers in a semiconductor device 有权
    静电放电保护电路保护半导体器件中的薄栅绝缘层

    公开(公告)号:US20070195472A1

    公开(公告)日:2007-08-23

    申请号:US11648328

    申请日:2006-12-29

    申请人: Kook Kwak Nak Choi

    发明人: Kook Kwak Nak Choi

    IPC分类号: H02H9/00

    CPC分类号: H01L27/0266

    摘要: An electrostatic discharge protection circuit protects the internal circuits of a semiconductor. The electrostatic discharge protection circuit includes a first electrostatic protection unit connected to a power source supply pad. The first electrostatic protection unit discharges an ESD current into the power source supply pad when an ESD is introduced into the input/output pad, and generates a first driving voltage by utilizing the ESD current flow through a voltage-drop unit. A driver driven by the first driving voltage generates a second driving voltage by an ESD current. A second electrostatic protection unit discharges the introduced ESD current into the power source supply pad by the second driving voltage such that a voltage applied to a gate of the first NMOS transistor is reduced.

    摘要翻译: 静电放电保护电路保护半导体的内部电路。 静电放电保护电路包括连接到电源供应板的第一静电保护单元。 当ESD被引入到输入/输出焊盘中时,第一静电保护单元将ESD电流放电到电源供应焊盘中,并且通过利用通过压降单元的ESD电流产生第一驱动电压。 由第一驱动电压驱动的驱动器通过ESD电流产生第二驱动电压。 第二静电保护单元通过第二驱动电压将引入的ESD电流放电到电源供应焊盘中,使得施加到第一NMOS晶体管的栅极的电压降低。

    Electrokinetic micro power cell using microfluidic-chip with multi-channel type
    7.
    发明申请
    Electrokinetic micro power cell using microfluidic-chip with multi-channel type 失效
    电动微动力电池采用多通道型微流控芯片

    公开(公告)号:US20060083661A1

    公开(公告)日:2006-04-20

    申请号:US10969292

    申请日:2004-10-19

    IPC分类号: G01N1/10

    CPC分类号: H02N3/00

    摘要: The invention relates to a new micro power cell applying the microfluidic-chip with multi-channel type. The streaming potential is the main thrust, which is created by Helmholtz-Smoluchowski's electrokinetic principle when electrolytic solution flows through a microchannel. The microfluidic-chip comprises an inflow port, a distributor, a multi-channel, a collector, an outflow port, and a pair of electrodes. The present invention could be applied to a new power source of clean energy.

    摘要翻译: 本发明涉及一种应用具有多通道类型的微流体芯片的新型微功率电池。 流动潜力是主要的推力,它是由亥姆霍兹斯莫洛库斯基的电动原理在电解液流过微通道时产生的。 微流体芯片包括流入端口,分配器,多通道,集电器,流出端口和一对电极。 本发明可以应用于新能源清洁能源。