公开(公告)号：US07569865B2

公开(公告)日：2009-08-04

申请号：US11002413

申请日：2004-12-03

申请人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

公开(公告)号：US20100308368A1

公开(公告)日：2010-12-09

申请号：US12797335

申请日：2010-06-09

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/02 ,  H01L33/36

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

摘要翻译： 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。

公开(公告)号：US07588952B2

公开(公告)日：2009-09-15

申请号：US11030323

申请日：2005-01-07

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

公开(公告)号：US07250638B2

公开(公告)日：2007-07-31

申请号：US11232956

申请日：2005-09-23

申请人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

摘要翻译： 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。

公开(公告)号：US07462881B2

公开(公告)日：2008-12-09

申请号：US11896307

申请日：2007-08-30

申请人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

摘要翻译： 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。

公开(公告)号：US08384120B2

公开(公告)日：2013-02-26

申请号：US13047371

申请日：2011-03-14

申请人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

公开(公告)号：US07816705B2

公开(公告)日：2010-10-19

申请号：US12458703

申请日：2009-07-21

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

摘要翻译： 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。

公开(公告)号：US20090278161A1

公开(公告)日：2009-11-12

申请号：US12458703

申请日：2009-07-21

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

公开(公告)号：US07576368B2

公开(公告)日：2009-08-18

申请号：US11896772

申请日：2007-09-05

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

摘要翻译： 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。

公开(公告)号：US07928465B2

公开(公告)日：2011-04-19

申请号：US12797335

申请日：2010-06-09

申请人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

发明人： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

摘要： A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

摘要翻译： 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。