公开(公告)号：US20120007101A1

公开(公告)日：2012-01-12

申请号：US13179325

申请日：2011-07-08

申请人： Jong-in YANG ,  Tae-hyung KIM ,  Si-hyuk LEE ,  Sang-yeob SONG ,  Cheol-soo SONE ,  Hak-hwan KIM ,  Jin-hyun LEE

发明人： Jong-in YANG ,  Tae-hyung KIM ,  Si-hyuk LEE ,  Sang-yeob SONG ,  Cheol-soo SONE ,  Hak-hwan KIM ,  Jin-hyun LEE

IPC分类号： H01L33/36 ,  H01L33/30 ,  H01L33/00 ,  H01L33/60

CPC分类号： H01L33/62 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

摘要： A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

摘要翻译： 半导体发光器件及其制造方法。 半导体发光器件包括依次堆叠在衬底上的第一电极层，绝缘层，第二电极层，第二半导体层，有源层和第一半导体层，通过 基板与第一电极层电连接，第二触点通过基板，第一电极层和绝缘层与第二电极层连通。 第一电极层通过填充穿过第二电极层，第二半导体层和有源层的接触孔而电连接到第一半导体层，并且绝缘层围绕接触孔的内周表面以绝缘 来自第二电极层的第一电极层。

公开(公告)号：US20120119249A1

公开(公告)日：2012-05-17

申请号：US13253515

申请日：2011-10-05

申请人： Tae-hyung KIM ,  Cheol-soo SONE ,  Jong-in YANG ,  Sang-yeob SONG ,  Si-hyuk LEE

发明人： Tae-hyung KIM ,  Cheol-soo SONE ,  Jong-in YANG ,  Sang-yeob SONG ,  Si-hyuk LEE

IPC分类号： H01L33/36 ,  H01L33/52

CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

摘要： An LED and manufacturing method therefor. The LED comprises a compound semiconductor structure having first and second compound layers and active layer, first and second electrode layers atop the second compound semiconductor layer and connected to the two compound. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer on the other side surface is connected to the second electrode layer.

摘要翻译： 一种LED及其制造方法。 LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并与两种化合物连接的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 另一侧表面上的第二电极连接层连接到第二电极层。