公开(公告)号：US20110049419A1

公开(公告)日：2011-03-03

申请号：US12720159

申请日：2010-03-09

Applicant: Jong-won LEE

Inventor： Jong-won LEE

IPC: H01M4/88

CPC classification number: H01M4/5825 ,  H01M4/136 ,  H01M6/16 ,  H01M10/0525 ,  H01M2300/0025

Abstract: A cathode active material, a cathode including the cathode active material, and a lithium battery including the cathode. A lithium manganese phosphate cathode active material having an olivine structure represented by LixMn1−y−zM′yM″zPO4, where 0.6≦x≦1.0, 0

Abstract translation: 阴极活性物质，包含正极活性物质的阴极和包含阴极的锂电池。 一种具有由LixMn1-y-zM'yM“zPO4表示的橄榄石结构的磷酸锰锂正极活性物质，其中0.6＆nlE; x＆lt; 1.0; 1.0,0

公开(公告)号：US20150130041A1

公开(公告)日：2015-05-14

申请号：US14534607

申请日：2014-11-06

Applicant: Jangmee SEO ,  Heeseok LEE ,  Jong-won LEE

Inventor： Jangmee SEO ,  Heeseok LEE ,  Jong-won LEE

IPC: H01L23/64 ,  H01L25/07 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L23/5384 ,  H01L23/3128 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1082 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18161 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: Provided are semiconductor packages and methods of fabricating the same. The method may include, stacking a lower semiconductor chip on a lower package substrate, forming a lower molding layer on the lower package substrate, forming a connecting through-hole and an element through-hole by performing a laser drilling process on the lower molding layer, and stacking an upper package substrate having a bottom surface to which a passive element is bonded on the lower package substrate to insert the passive element into the element through-hole.

Abstract translation: 提供半导体封装及其制造方法。 该方法可以包括：在下封装衬底上堆叠下半导体芯片，在下封装衬底上形成下模制层，通过在下成型层上执行激光钻孔工艺形成连接通孔和元件通孔 并且将具有无源元件的底面的上封装基板堆叠在下封装基板上，以将无源元件插入元件通孔中。