公开(公告)号：US09601575B2

公开(公告)日：2017-03-21

申请号：US14987813

申请日：2016-01-05

申请人： Jongki Jung ,  Myungil Kang ,  Yoonhae Kim ,  Kwanheum Lee

发明人： Jongki Jung ,  Myungil Kang ,  Yoonhae Kim ,  Kwanheum Lee

IPC分类号： H01L21/84 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/0847 ,  H01L21/823418 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7851

摘要： A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.

公开(公告)号：US20160315146A1

公开(公告)日：2016-10-27

申请号：US14987813

申请日：2016-01-05

申请人： Jongki Jung ,  Myungil Kang ,  Yoonhae Kim ,  Kwanheum Lee

发明人： Jongki Jung ,  Myungil Kang ,  Yoonhae Kim ,  Kwanheum Lee

IPC分类号： H01L29/08 ,  H01L29/06 ,  H01L29/165 ,  H01L29/78 ,  H01L29/161 ,  H01L29/16

CPC分类号： H01L29/0847 ,  H01L21/823418 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0653 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/7851

摘要： A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper surface of the active fin. The source/drain includes a first crystal growth portion and a second crystal growth portion sharing a plane with the first crystal growth portion and having a lower surface disposed at a lower level than a lower surface of the first crystal growth portion.

摘要翻译： 半导体器件包括衬底，从衬底突出的活性鳍和设置在活性鳍的上表面上的不对称菱形源/漏。 源极/漏极包括与第一晶体生长部共享平面的第一晶体生长部分和第二晶体生长部分，并且具有设置在比第一晶体生长部分的下表面低的水平的下表面。

公开(公告)号：US08716117B2

公开(公告)日：2014-05-06

申请号：US13106977

申请日：2011-05-13

申请人： Myeongcheol Kim ,  Sooyeon Jeong ,  Joon Goo Hong ,  Dohyoung Kim ,  Yongjin Kim ,  Jin Wook Lee ,  Yoonhae Kim

发明人： Myeongcheol Kim ,  Sooyeon Jeong ,  Joon Goo Hong ,  Dohyoung Kim ,  Yongjin Kim ,  Jin Wook Lee ,  Yoonhae Kim

IPC分类号： H01L21/28

CPC分类号： H01L29/4966 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/4958 ,  H01L29/4975 ,  H01L29/66545

摘要： A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

摘要翻译： 半导体器件和形成半导体器件的方法包括：在半导体衬底上形成栅电极并在栅电极的两个侧表面上形成间隔物; 在栅电极上形成封盖图案; 以及在栅电极之间形成金属接触。 每个封盖图案形成为具有大于每个栅电极的宽度的宽度。

公开(公告)号：US09754936B2

公开(公告)日：2017-09-05

申请号：US14995830

申请日：2016-01-14

申请人： Suehye Park ,  Yoonhae Kim ,  Deokhan Bae ,  Jaeran Jang ,  Hwichan Jun

发明人： Suehye Park ,  Yoonhae Kim ,  Deokhan Bae ,  Jaeran Jang ,  Hwichan Jun

IPC分类号： H01L27/088 ,  H01L23/485

CPC分类号： H01L27/088 ,  H01L21/823475 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/092

摘要： A semiconductor device includes a substrate provided with active patterns, gate electrodes extending across the active patterns, source/drain regions provided in upper portions of the active patterns between the gate electrodes, respectively, and first contacts and second contacts provided between the gate electrodes and electrically connected to the source/drain regions, respectively. The first and second contacts are disposed in such a way that a contact center line thereof is spaced apart from a corresponding gate center line by first and second distances. The first distance differs from the second distance.

公开(公告)号：US20110281426A1

公开(公告)日：2011-11-17

申请号：US13106977

申请日：2011-05-13

申请人： Myeongcheol Kim ,  Sooyeon Jeong ,  Joon Goo Hong ,  Dohyoung Kim ,  Yongjin Kim ,  Jin Wook Lee ,  Yoonhae Kim

发明人： Myeongcheol Kim ,  Sooyeon Jeong ,  Joon Goo Hong ,  Dohyoung Kim ,  Yongjin Kim ,  Jin Wook Lee ,  Yoonhae Kim

IPC分类号： H01L21/28

CPC分类号： H01L29/4966 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/4958 ,  H01L29/4975 ,  H01L29/66545

摘要： A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes.

摘要翻译： 半导体器件和形成半导体器件的方法包括：在半导体衬底上形成栅电极并在栅电极的两个侧表面上形成间隔物; 在栅电极上形成封盖图案; 以及在栅电极之间形成金属接触。 每个封盖图案形成为具有大于每个栅电极的宽度的宽度。