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    Pattern forming materials and pattern formation method using the materials
    1.
    发明授权
    Pattern forming materials and pattern formation method using the materials 有权
    图案形成材料和图案形成方法使用材料

    公开(公告)号：US08187786B2

    公开(公告)日：2012-05-29

    申请号：US10531897

    申请日：2003-10-20

    申请人： Joo-Ho Kim ,  Junji Tominaga ,  Masashi Kuwahara

    发明人： Joo-Ho Kim ,  Junji Tominaga ,  Masashi Kuwahara

    IPC分类号： G03F7/00

    CPC分类号： G11B7/261 ,  B41M5/26 ,  B41M5/368 ,  B41M5/46 ,  B41M5/465

    摘要： A pattern forming materials includes a thermal sensitive material layer formed on a target substrate, a first light-to-heat converting layer formed between the thermal sensitive material layer and the target substrate, and a second light-to-heat converting layer formed on a surface of the thermal sensitive material layer opposite to the first light-to-heat converting layer, the thermal sensitive material layer being interposed between the first and second light-to-heat converting layers. A higher aspect ratio fine pattern can be formed in the thermal sensitive material layer made of photoresist using heat generated in the first and second light-to-heat converting layers formed on both surfaces of the thermal sensitive material layer.

    摘要翻译： 图案形成材料包括形成在目标基板上的热敏材料层，形成在热敏材料层和目标基板之间的第一光热转换层和形成在热敏材料层上的第二光热转换层 所述热敏材料层的表面与所述第一光热转换层相对，所述热敏材料层插入在所述第一和第二光热转换层之间。 可以在形成在热敏材料层的两个表面上的第一和第二光热转换层中产生的热量的光致抗蚀剂材料层中形成更高的纵横比精细图案。

    Multi-layer structure and method of drawing microscopic structure therein, optical disc master and method of fabricating the same using the multi-layer structure, and optical disc manufactured using the optical disc master
    2.
    发明授权
    Multi-layer structure and method of drawing microscopic structure therein, optical disc master and method of fabricating the same using the multi-layer structure, and optical disc manufactured using the optical disc master 失效
    多层结构及其微观结构的绘制方法，光盘主机及其制造方法使用多层结构，以及使用光盘主机制造的光盘

    公开(公告)号：US07435468B2

    公开(公告)日：2008-10-14

    申请号：US10849522

    申请日：2004-05-20

    申请人： Joo-ho Kim ,  In-sik Park ,  Masashi Kuwahara ,  Junji Tominaga ,  Takayuki Sima

    发明人： Joo-ho Kim ,  In-sik Park ,  Masashi Kuwahara ,  Junji Tominaga ,  Takayuki Sima

    IPC分类号： B32B9/00

    CPC分类号： G11B7/00452 ,  G11B7/261 ,  G11B7/263 ,  Y10S428/913

    摘要： A multi-layer structure whose volume changes when a temperature exceeds a predetermined threshold value, a microscopic structure drawing method that involves emitting a laser beam onto the multi-layer structure to create a temperature distribution within a beam spot and performing microscopic recording on a portion of the beam spot having a temperature higher than the threshold value, an optical disc master, and a mastering method using the same, where the multi-layer structure includes a substrate and a transformation layer formed on the substrate, wherein a volume of a portion of the transformation layer irradiated by a laser beam changes when the temperature of the portion exceeds a predetermined temperature. The microscopic structure drawing method includes emitting the laser beam onto a predetermined region of the transformation layer and heating the region of the transformation layer irradiated by the laser beam beyond a predetermined temperature so that the heated region can undergo a volume change.

    摘要翻译： 一种当温度超过预定阈值时其体积变化的多层结构，涉及在多层结构上发射激光以产生束斑内的温度分布并在部分上进行微观记录的显微结构拉伸方法 具有温度高于阈值的光斑，光盘母盘及其使用方法，其中所述多层结构包括衬底和形成在所述衬底上的相变层，其中所述部分的体积 当部分的温度超过预定温度时，由激光束照射的变换层的变化将发生变化。 微观结构绘制方法包括将激光束发射到转变层的预定区域上，并将由激光束照射的相变层的区域加热超过预定温度，使得加热区域能够经历体积变化。

    Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal
    3.
    发明授权
    Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metal 有权
    由包括稀土类过渡金属的层状结构的加热部分形成的化合物半导体

    公开(公告)号：US07479656B2

    公开(公告)日：2009-01-20

    申请号：US11109389

    申请日：2005-04-19

    申请人： Joo-Ho Kim ,  Junji Tominaga

    发明人： Joo-Ho Kim ,  Junji Tominaga

    IPC分类号： H01L29/10

    CPC分类号： H01L29/247 ,  H01L21/76888 ,  H01L23/5258 ,  H01L27/10873 ,  H01L29/263 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.

    摘要翻译： 制造化合物半导体的方法包括以下步骤：形成包括氧或硫的电介质层的层叠结构，以及形成在介电层之间的层间，包括对氧和硫具有高反应性的稀土过渡金属，并加热 分层结构。 作为元件的化学反应和扩散的结果，可以根据加热部分的温度，将层状结构的加热部分改变为半导体或绝缘体。

    High density recording medium with super-resolution near-field structure manufactured using high-melting point metal oxide or silicon oxide mask layer
    4.
    发明授权
    High density recording medium with super-resolution near-field structure manufactured using high-melting point metal oxide or silicon oxide mask layer 有权
    使用高熔点金属氧化物或氧化硅掩模层制造的具有超分辨率近场结构的高密度记录介质

    公开(公告)号：US07651793B2

    公开(公告)日：2010-01-26

    申请号：US10529044

    申请日：2003-09-24

    申请人： Joo-Ho Kim ,  Junji Tominaga

    发明人： Joo-Ho Kim ,  Junji Tominaga

    IPC分类号： G11B11/105

    CPC分类号： B82Y10/00 ,  G11B7/24 ,  G11B7/258 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316

    摘要： A high density recording medium with a super-resolution near-field structure including a mask layer comprising high melting point metal oxide or silicon oxide. A high density recording medium with a super-resolution near-field structure includes a sequential stack of a second dielectric layer, a recording layer, a protective layer, a mask layer, a first dielectric layer, and a polycarbonate layer, wherein the mask layer comprises high melting point metal oxide or silicon oxide to generate a near field by optically or thermally inducing physical changes in the crystalline structure and optical properties of the high melting point metal oxide or silicon oxide.

    摘要翻译： 一种具有包括高熔点金属氧化物或氧化硅的掩模层的超分辨率近场结构的高密度记录介质。 具有超分辨率近场结构的高密度记录介质包括第二介电层，记录层，保护层，掩模层，第一介电层和聚碳酸酯层的顺序堆叠，其中掩模层 包括高熔点金属氧化物或氧化硅，以通过光学或热诱导高熔点金属氧化物或氧化硅的晶体结构和光学性质的物理变化产生近场。

    Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor
    7.
    发明申请
    Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor 有权
    具有高熔点记录层的记录介质，其信息记录方法及其信息再现装置及方法

    公开(公告)号：US20050249065A1

    公开(公告)日：2005-11-10

    申请号：US10514422

    申请日：2003-05-16

    申请人： Joo-Ho Kim ,  Junji Tominaga

    发明人： Joo-Ho Kim ,  Junji Tominaga

    IPC分类号： B41M5/26 ,  G11B7/004 ,  G11B7/243 ,  G11B7/257 ,  G11B5/09

    CPC分类号： B82Y10/00 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/2585 ,  G11B7/259 ,  G11B2007/24306 ,  Y10T428/21

    摘要： A simple-structured recording medium without a mask layer and information recording and reproducing methods, which resolve thermal stability related problems arising during reproduction, the recording medium including a high melting point recording layer between first and second dielectric layers. The method of recording information on the recording medium involves irradiating a laser beam onto the recording medium to induce reaction and diffusion in the high melting point recording layer and the first and second dielectric layers. The method of reproducing information recorded on such a super-resolution near-field recording medium by the above method involves generating plasmon using crystalline particles of the high melting point recording layer and the first and second dielectric layers as a scatter source to reproduce information regardless of a diffraction limit of a laser used.

    摘要翻译： 具有掩模层的简单结构的记录介质和信息记录和再现方法，其解决在再现期间产生的热稳定性相关问题，记录介质包括第一和第二介电层之间的高熔点记录层。 在记录介质上记录信息的方法包括将激光束照射到记录介质上以在高熔点记录层和第一和第二介电层中引起反应和扩散。 通过上述方法再现记录在这样的超分辨率近场记录介质上的信息的方法包括使用高熔点记录层和第一和第二介电层的结晶粒子作为散射源来产生等离子体，以再现信息，而不管 使用的激光衍射极限。

    Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor
    10.
    发明授权
    Recording medium having high melting point recording layer, information recording method thereof, and information reproducing apparatus and method therefor 有权
    具有高熔点记录层的记录介质，其信息记录方法及其信息再现装置及方法

    公开(公告)号：US07572496B2

    公开(公告)日：2009-08-11

    申请号：US10514422

    申请日：2003-05-16

    申请人： Joo-Ho Kim ,  Junji Tominaga

    发明人： Joo-Ho Kim ,  Junji Tominaga

    IPC分类号： B32B3/02

    CPC分类号： B82Y10/00 ,  G11B7/24 ,  G11B7/243 ,  G11B7/257 ,  G11B7/2585 ,  G11B7/259 ,  G11B2007/24306 ,  Y10T428/21

    摘要： A simple-structured recording medium without a mask layer and information recording and reproducing methods, which resolve thermal stability related problems arising during reproduction, the recording medium including a high melting point recording layer between first and second dielectric layers. The method of recording information on the recording medium involves irradiating a laser beam onto the recording medium to induce reaction and diffusion in the high melting point recording layer and the first and second dielectric layers. The method of reproducing information recorded on such a super-resolution near-field recording medium by the above method involves generating plasmon using crystalline particles of the high melting point recording layer and the first and second dielectric layers as a scatter source to reproduce information regardless of a diffraction limit of a laser used.

    摘要翻译： 具有掩模层的简单结构的记录介质和信息记录和再现方法，其解决在再现期间产生的热稳定性相关问题，记录介质包括第一和第二介电层之间的高熔点记录层。 在记录介质上记录信息的方法包括将激光束照射到记录介质上以在高熔点记录层和第一和第二介电层中引起反应和扩散。 通过上述方法再现记录在这样的超分辨率近场记录介质上的信息的方法包括使用高熔点记录层和第一和第二介电层的结晶粒子作为散射源来产生等离子体，以再现信息，而不管 使用的激光衍射极限。