Method of manufacturing TFT and array TFT
    2.
    发明授权
    Method of manufacturing TFT and array TFT 有权
    制造TFT和阵列TFT的方法

    公开(公告)号:US08372702B2

    公开(公告)日:2013-02-12

    申请号:US12923051

    申请日:2010-08-31

    IPC分类号: H01L21/84 H01L51/40

    摘要: A method of manufacturing a thin film transistor includes sequentially forming a gate and at least one insulation layer on a substrate, forming a source electrode and a drain electrode on the at least one insulation layer, and forming a channel layer formed of a semiconductor on a part of the source electrode and the drain electrode, wherein the gate, the source electrode, and the drain electrode are formed by using a hybrid inkjet printing apparatus.

    摘要翻译: 制造薄膜晶体管的方法包括在基板上依次形成栅极和至少一个绝缘层,在至少一个绝缘层上形成源电极和漏电极,以及在半导体层上形成沟道层 源电极和漏电极的一部分,其中栅极,源电极和漏电极通过使用混合喷墨打印装置形成。

    Methods of forming wirings in electronic devices
    3.
    发明授权
    Methods of forming wirings in electronic devices 有权
    在电子设备中形成布线的方法

    公开(公告)号:US09153487B2

    公开(公告)日:2015-10-06

    申请号:US13601658

    申请日:2012-08-31

    摘要: A method of forming a wiring may include forming a first wire on a substrate; forming a material layer on the substrate, except on the first wire; forming a surface treatment film on the material layer; and forming a second wire on the first wire. The surface treatment film has physical properties opposite to the first wire. A method of forming a wiring may include forming a first wire on a substrate; forming a material layer on the substrate and the first wire; removing a portion of the material layer from the first wire; forming a surface treatment film on the material layer and the first wire; removing a portion of the surface treatment film from the first wire; and forming a second wire on the first wire. A thickness of the material layer on the substrate is greater than a thickness of the first wire on the substrate.

    摘要翻译: 形成布线的方法可以包括在基板上形成第一布线; 在所述基板上形成除了所述第一线之外的材料层; 在所述材料层上形成表面处理膜; 以及在所述第一线上形成第二线。 表面处理膜具有与第一丝相反的物理性质。 形成布线的方法可以包括在基板上形成第一布线; 在所述基板和所述第一线上形成材料层; 从所述第一丝线去除所述材料层的一部分; 在所述材料层和所述第一线上形成表面处理膜; 从所述第一丝线去除所述表面处理膜的一部分; 以及在所述第一线上形成第二线。 基板上的材料层的厚度大于基板上的第一布线的厚度。

    Methods of forming patterns on a substrate
    4.
    发明授权
    Methods of forming patterns on a substrate 有权
    在基材上形成图案的方法

    公开(公告)号:US09018036B2

    公开(公告)日:2015-04-28

    申请号:US13448438

    申请日:2012-04-17

    IPC分类号: H01L51/40 B41J2/16

    摘要: A method of forming patterns on a substrate, the method including: placing a mask having an opening defining a portion of one surface of a substrate on which patterns are to be formed on the substrate; forming a first modification layer in the opening by ejecting a surface modification ink onto a surface of the substrate through the opening; ejecting a target ink having droplets of sizes larger than those of a surface modification ink such that the target ink is distributed on the first modification layer in the opening; and removing the mask.

    摘要翻译: 一种在基板上形成图案的方法,所述方法包括:将具有限定要在其上形成有图案的基板的一个表面的一部分的一部分的开口的掩模放置在基板上; 通过所述开口将表面改性油墨喷射到所述基板的表面上,在所述开口中形成第一改质层; 喷射具有大于表面改性油墨的尺寸的液滴的目标油墨,使得目标油墨分布在开口中的第一改质层上; 并取下面罩。

    METHODS OF FORMING PATTERNS ON A SUBSTRATE
    6.
    发明申请
    METHODS OF FORMING PATTERNS ON A SUBSTRATE 有权
    在基板上形成图案的方法

    公开(公告)号:US20130106942A1

    公开(公告)日:2013-05-02

    申请号:US13448438

    申请日:2012-04-17

    IPC分类号: B41J2/015

    摘要: A method of forming patterns on a substrate, the method including: placing a mask having an opening defining a portion of one surface of a substrate on which patterns are to be formed on the substrate; forming a first modification layer in the opening by ejecting a surface modification ink onto a surface of the substrate through the opening; ejecting a target ink having droplets of sizes larger than those of a surface modification ink such that the target ink is distributed on the first modification layer in the opening; and removing the mask.

    摘要翻译: 一种在基板上形成图案的方法,所述方法包括:将具有限定要在其上形成有图案的基板的一个表面的一部分的一部分的开口的掩模放置在基板上; 通过所述开口将表面改性油墨喷射到所述基板的表面上,在所述开口中形成第一改质层; 喷射具有大于表面改性油墨的尺寸的液滴的目标油墨,使得目标油墨分布在开口中的第一改质层上; 并取下面罩。