利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.027 秒)

    Method for Forming Dual Fully Silicided Gates and Devices with Dual Fully Silicided Gates
    1.
    发明申请
    Method for Forming Dual Fully Silicided Gates and Devices with Dual Fully Silicided Gates 审中-公开
    用于形成双层全硅酸盐浇口的双层完全硅酸盐浇口和设备的方法

    公开(公告)号：US20060263961A1

    公开(公告)日：2006-11-23

    申请号：US11382986

    申请日：2006-05-12

    申请人： Jorge Kittl ,  Anne Lauwers ,  Anabela Veloso ,  Anil Kottantharayil ,  Marcus van Dal

    发明人： Jorge Kittl ,  Anne Lauwers ,  Anabela Veloso ,  Anil Kottantharayil ,  Marcus van Dal

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823842 ,  H01L29/785

    摘要： A method for manufacturing CMOS devices with fully silicided (FUSI) gates is described. A metallic gate electrode of an NMOS transistor and a metallic gate electrode of a pMOS transistor have a different work function. The work function of each transistor type is determined by selecting a thickness of a corresponding semiconductor gate electrode and a thermal budget of a first thermal step such that, during silicidation, different silicide phases are obtained on the nMOS and the pMOS transistors. The work function of each type of transistor can be adjusted by selectively doping the semiconductor material prior to the formation of the silicide.

    摘要翻译： 描述了一种用于制造具有完全硅化（FUSI）栅极的CMOS器件的方法。 NMOS晶体管的金属栅电极和pMOS晶体管的金属栅电极具有不同的功函数。 通过选择对应的半导体栅电极的厚度和第一热步骤的热预算来确定每个晶体管类型的功函数，使得在硅化期间，在nMOS和pMOS晶体管上获得不同的硅化物相。 可以通过在形成硅化物之前选择性地掺杂半导体材料来调节每种类型的晶体管的功函数。

    METHOD FOR DOPING A FIN-BASED SEMICONDUCTOR DEVICE
    2.
    发明申请
    METHOD FOR DOPING A FIN-BASED SEMICONDUCTOR DEVICE 审中-公开
    用于掺杂基于FIN的半导体器件的方法

    公开(公告)号：US20080050897A1

    公开(公告)日：2008-02-28

    申请号：US11844309

    申请日：2007-08-23

    申请人： Anil Kottantharayil

    发明人： Anil Kottantharayil

    IPC分类号： H01L21/423

    CPC分类号： H01L29/785 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/66803

    摘要： A method for doping a multi-gate device is disclosed. In one aspect, the method comprises patterning a fin in a substrate, depositing a gate stack, and doping the fin. The process of doping the fin is done by depositing a blocking mask material at least on the top surface of the fin after the patterning of the gate stack. After the deposition of the blocking mask material dopant ions are implanted whereby the blocking mask material partially or completely blocks the top surface of the fin from these dopant ions.

    摘要翻译： 公开了掺杂多栅极器件的方法。 在一个方面，该方法包括在衬底中图案化翅片，沉积栅叠层，以及掺杂鳍片。 通过在栅极堆叠的图案化之后，至少在鳍片的顶表面上沉积阻挡掩模材料来完成掺杂鳍片的工艺。 在沉积阻挡掩模材料之后，注入掺杂剂离子，由此阻挡掩模材料部分地或完全地从这些掺杂离子阻挡鳍的顶表面。