公开(公告)号：US5248371A

公开(公告)日：1993-09-28

申请号：US929099

申请日：1992-08-13

申请人： Joseph A. Maher ,  Martin A. Kent

发明人： Joseph A. Maher ,  Martin A. Kent

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32541 ,  H01J37/32587 ,  H01J2237/3341

摘要： Hollow-anode glow discharge apparatus in the form of two-electrode and three-electrode reactors provide, in various embodiments, improved uniformity, efficiency and low-pressure substrate surface processing. In one improved uniformity embodiment for ion-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, multi-sized and evenly-spaced holes. In one improved uniformity embodiment for chemically-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, evenly-spaced holes and a stepped or continuously-variable non-planar profile. In one improved low pressure embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density grid having multiple, evenly-sized and spaced holes of widths large enough to overcome dark space effects. In one improved efficiency selected ion energy embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density source that synergistically cooperates with an apertured grid to provide selected-energy ions at higher densities than heretofore possible. In any embodiment, both build-up on and removal from the substrate are possible.

摘要翻译： 双电极和三电极电抗器形式的空心 - 阳极辉光放电装置在各种实施例中提供改进的均匀性，效率和低压衬底表面处理。 在用于离子主导的工艺的一个改进的均匀性实施例中，本发明的装置包括具有多个多尺寸和均匀间隔的孔的高能量密度均匀化栅格。 在用于化学主导的方法的一个改进的均匀性实施方案中，本发明的装置包括具有多个均匀间隔的孔和高阶能量密度均匀化网格以及阶梯式或连续可变的非平面轮廓。 在用于离子主导和/或化学主导的方法的一个改进的低压实施例中，本发明的装置包括具有多个均匀尺寸和间隔开的宽度足够大以克服暗空间效应的孔的高能量密度栅格。 在用于离子主导和/或化学主导的方法的一种改进的效率选择的离子能量实施方案中，本发明的装置包括高能密度源，其与有孔网格协同地配合以提供更高密度的选择能量离子 以前可能的。 在任何实施例中，可以在基板上积聚和从基板移除两者。

公开(公告)号：US06776846B2

公开(公告)日：2004-08-17

申请号：US10131243

申请日：2002-04-25

申请人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

发明人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

IPC分类号： C23C1600

CPC分类号： H01L21/6719 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67742 ,  Y10S414/141

摘要： An integrated wafer processing system having a wafer queuing station and a plurality of plasma reactors connected to peripheral walls of a central vacuum chamber. Vacuum valves separate the central chamber from the queuing station and the plasma reactors. A wafer transfer arm capable of R-&THgr; motion can transfer wafers between the queuing station and any of the plasma reactors in either a single-step or a multi-step process.

摘要翻译： 具有晶片排队台和连接到中央真空室的周壁的多个等离子体反应器的集成晶片处理系统。 真空阀将中央室与排队台和等离子体反应器分开。 能够进行R-θ运动的晶片传送臂可以在单步或多步骤过程中在排队台和任何等离子体反应器之间传送晶片。

公开(公告)号：US6103055A

公开(公告)日：2000-08-15

申请号：US502860

申请日：1995-07-14

申请人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

发明人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

IPC分类号： B65G49/07 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67167 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67742 ,  H01L21/67745

摘要： A substrate processing system is provided that includes substrate processing vessels, a substrate queuing station, a substrate transfer device, and a processor. The processor, in communication with the processing vessels, the queuing station, and the transfer device, provides selectable single and multi-step processing of the substrates by accessing a process command for a given substrate corresponding to desired processing of the substrate.

摘要翻译： 提供了一种基板处理系统，其包括基板处理容器，基板排队台，基板传送装置和处理器。 与处理容器，排队站和传送装置通信的处理器通过访问对应于衬底的期望处理的给定衬底的处理命令来提供对衬底的可选择的单步和多步处理。

公开(公告)号：US06413320B2

公开(公告)日：2002-07-02

申请号：US09782938

申请日：2001-02-13

申请人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

发明人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

IPC分类号： H01L2102

CPC分类号： H01L21/6719 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67742 ,  Y10S414/141

摘要： An integrated wafer processing system having a wafer queuing station and a plurality of plasma reactors connected to peripheral walls of a central vacuum chamber. Vacuum valves separate the central chamber from the queuing station and the plasma reactors. A wafer transfer arm capable of R-&THgr; motion can transfer wafers between the queuing station and any of the plasma reactors in either a single-step or a multi-step process.

摘要翻译： 具有晶片排队台和连接到中央真空室的周壁的多个等离子体反应器的集成晶片处理系统。 真空阀将中央室与排队台和等离子体反应器分开。 具有R-＆THgr的晶片传送臂 运动可以在单步或多步骤过程中在排队台和任何等离子体反应器之间传送晶片。

公开(公告)号：US06214119B1

公开(公告)日：2001-04-10

申请号：US09195749

申请日：1998-11-18

申请人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

发明人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

IPC分类号： C23C1600

CPC分类号： H01L21/6719 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67742 ,  Y10S414/141

摘要： The present invention includes plural plasma processing vessels and a wafer queuing station arrayed with a wafer transfer arm in a controlled environment. Wafers are movable within the controlled environment one at a time selectably between the several plasma vessels and the wafer queuing station without atmospheric or other exposure so that possible contamination of the moved wafers is prevented. The system is selectively operative in either single-step or multiple-step processing modes, and in either of the modes, the several plasma etching vessels are operable to provide a desirably high system throughput. In the preferred embodiment, the several plasma vessels and the queuing station are arrayed about a closed pentagonal locus with the wafer transfer arm disposed within the closed locus. The wafer transfer arm is movable in R and &THgr; between the several plasma etching vessels and the wafer queuing station, and selectably actuatable vacuum locks are provided between each of the plasma etching vessels and the R and &THgr; movable wafer transfer arm to both maintain an intended atmospheric condition and to allow wafer transport therethrough. The plasma vessels each include first and second water-cooled electrodes that are movable relatively to each other so as to provide a selectable gap dimension therebetween. One of the electrodes includes a selectively movable pedestal portion slidably mounted thereto that is cooperative with the R and &THgr; movable wafer transfer arm to load and unload wafers respectively into and out of the associated plasma vessel. The wafer transfer arm is operative to pick-up the wafers by back-side and peripheral wafer contact only, which therewith prevents possible front-side contact-induced contamination of the wafer surfaces. A sensor on the transfer arm is operative to provide a signal indication of proper wafer seating.

摘要翻译： 本发明包括多个等离子体处理容器和在受控环境中排列有晶片传送臂的晶片排队台。 晶片可以在受控环境内一次性地选择性地在几个等离子体容器和晶片排队台之间可选地没有大气或其他暴露，从而防止移动的晶片的可能的污染。 该系统选择性地以单步或多步处理模式操作，并且在任一模式中，几个等离子体蚀刻容器可操作以提供期望的高系统吞吐量。 在优选实施例中，几个等离子体容器和排队台围绕封闭的五边形轨迹排列，其中晶片传送臂设置在闭合轨迹内。 晶圆传送臂可在R和＆ 在等离子体蚀刻容器和晶片排队台之间，并且可选择地致动的真空锁提供在每个等离子体蚀刻容器与R和＆ 可移动晶片传送臂保持预期的大气条件并允许晶片从其中传输。 等离子体容器各自包括可相对于彼此移动的第一和第二水冷电极，以便在它们之间提供可选择的间隙尺寸。 其中一个电极包括可滑动地安装在其上的与R和＆amp; 可移动的晶片传送臂将晶片分别装入和卸载相关联的等离子体容器。 晶片传送臂可操作用于仅通过背面和外围晶片接触来拾取晶片，从而防止晶片表面的可能的前侧接触引起的污染。 传送臂上的传感器可操作以提供适当的晶片座位的信号指示。

公开(公告)号：US5076205A

公开(公告)日：1991-12-31

申请号：US294278

申请日：1989-01-06

申请人： E. John Vowles ,  Joseph A. Maher ,  Joseph D. Napoli

发明人： E. John Vowles ,  Joseph A. Maher ,  Joseph D. Napoli

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/677

CPC分类号： H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67775 ,  Y10S414/139

摘要： A system for multichamber processing of semiconductor wafers providing flexibility in the nature of processing available in a multi processing facility. To accommodate changing processing demands and chamber replacement, a mobile processing chamber selectively docks with a multiple chamber system to form one of its processing chambers. The capabilities of the multiprocessing multichamber system are enhanced by extending the system to other multichamber systems through intermediate buffer storage wafer cassette and elevator systems. The extending multichamber system is further provided with intermediate access wafer storage elevator cassettes.

公开(公告)号：US4715921A

公开(公告)日：1987-12-29

申请号：US923125

申请日：1986-10-24

申请人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

发明人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/67167 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67276 ,  H01L21/67742 ,  Y10S414/137

摘要： The present invention includes plural plasma etching vessels and a wafer queuing station arrayed with a wafer transfer arm in a controlled environment. Wafer processing in each vessel is regulated by a state controller for processing a plurality of wafers from a single cassette, contained within the vacuum environment of the plural plasma etching vessels and wafer queuing station, to provide an orderly and efficient throughput of wafers for diverse or similar processing in the plural vessels. In this manner a wafer can be processed as soon as a vessel becomes available.

摘要翻译： 本发明包括多个等离子体蚀刻容器和在受控环境中排列有晶片传送臂的晶片排队台。 每个容器中的晶片处理由用于从多个等离子体蚀刻容器和晶片排队台的真空环境中包含的单个盒子处理多个晶片的状态控制器来调节，以提供用于不同或不同的等离子体 类似的处理在多个船只。 以这种方式，一旦容器变得可用就可以处理晶片。

公开(公告)号：US5344542A

公开(公告)日：1994-09-06

申请号：US809031

申请日：1991-12-16

申请人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

发明人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

IPC分类号： B23Q7/08 ,  B65G49/07 ,  H01J37/18 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/683 ,  C23C14/56 ,  H01L21/02

CPC分类号： H01L21/67167 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/67742 ,  Y10S414/139

摘要： The present invention includes plural plasma etching vessels and a wafer queuing station arrayed with a wafer transfer arm in a controlled environment. Wafers are movable within the controlled environment one at a time selectably between the several plasma vessels and the wafer queuing station without atmospheric or other exposure so that possible contamination of the moved wafers is prevented. The system is selectively operative in either single-step or multiple-step processing modes, and in either of the modes, the several plasma etching vessels are operable to provide a desirably high system throughput. In the preferred embodiment, the several plasma vessels and the queuing station are arrayed about a closed pentagonal locus with the wafer transfer arm disposed within the closed locus. The wafer transfer arm is movable in R and TT between the several plasma etching vessels and the wafer queuing station, and selectably actuatable vacuum locks are provided between each of the plasma etching vessels and the R and TT movable wafer transfer arm to both maintain an intended atmospheric condition and to allow wafer transport therethrough. The plasma vessels each include first and second water-cooled electrodes that are movable relatively to each other so as to provide a selectable gap dimension therebetween. One of the electrodes includes a selectively movable pedestal portion slidably mounted thereto that is cooperative with the R and TT movable wafer transfer arm to load and unload wafers respectively into and out of the associated plasma vessel. The wafer transfer arm is operative to pick-up the wafers by back-side and peripheral wafer contact only, which therewith prevents possible front-side contact-induced contamination of the wafer surfaces. A sensor on the transfer arm is operative to provide a signal indication of proper wafer seating.

摘要翻译： 本发明包括多个等离子体蚀刻容器和在受控环境中排列有晶片传送臂的晶片排队台。 晶片可以在受控环境内一次性地选择性地在几个等离子体容器和晶片排队台之间可选地没有大气或其他暴露，从而防止移动的晶片的可能的污染。 该系统选择性地以单步或多步处理模式操作，并且在任一模式中，几个等离子体蚀刻容器可操作以提供期望的高系统吞吐量。 在优选实施例中，几个等离子体容器和排队台围绕封闭的五边形轨迹排列，其中晶片传送臂设置在闭合轨迹内。 晶片传送臂可以在几个等离子蚀刻容器和晶片排队台之间的R和TT中移动，并且可选择地致动的真空锁提供在每个等离子体蚀刻容器与R和TT可移动晶片传送臂之间，以保持预期的 大气条件并允许晶片从其中传输。 等离子体容器各自包括可相对于彼此移动的第一和第二水冷电极，以便在它们之间提供可选的间隙尺寸。 其中一个电极包括可滑动地安装在其上的可选择性地移动的基座部分，其与R和TT可移动晶片传送臂协作以将晶片分别加载和卸载相关联的等离子体容器。 晶片传送臂可操作用于仅通过背面和外围晶片接触来拾取晶片，从而防止晶片表面的可能的前侧接触引起的污染。 传送臂上的传感器可操作以提供适当的晶片座位的信号指示。

公开(公告)号：US5308431A

公开(公告)日：1994-05-03

申请号：US863723

申请日：1992-04-03

申请人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

发明人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

IPC分类号： H01J37/18 ,  H01L21/00 ,  H01L21/677 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/6719 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67742

摘要： The present invention includes plural plasma etching vessels and a wafer queuing station arrayed with a wafer transfer arm in a controlled environment. Wafers are movable within the controlled environment one at a time selectably between the plasma vessels and the wafer queuing station without atmospheric or other possible contamination. The system is selectively operative in either single-step or multiple-step processing modes. In the preferred embodiment, the plasma vessels and the queuing station are arrayed about a closed pentagonal locus with the wafer transfer arm disposed within the closed locus. The wafer transfer arm is movable between the plasma etching vessels and the wafer queuing station. Selectably actuable vacuum locks are provided between the plasma etching vessels and the wafer transfer arm to maintain an intended atmospheric condition and to allow wafer transport therethrough. The plasma vessels each include first and second water-cooled electrodes that are movable relatively to each other. The wafer transfer arm is operative to pick-up the wafers by back-side and peripheral wafer contact only. A sensor on the transfer arm provides an indication of proper wafer seating. Wafer processing in each vessel is regulated by a state controller for processing a plurality of wafers from a single cassette to provide an orderly and efficient throughput of wafers for diverse or similar processing in the plural vessels.

摘要翻译： 本发明包括多个等离子体蚀刻容器和在受控环境中排列有晶片传送臂的晶片排队台。 晶片可在受控环境内一次性地可选地在等离子体容器和晶片排队台之间移动，而无大气或其它可能的污染。 该系统选择性地以单步或多步处理模式操作。 在优选实施例中，等离子体容器和排队台围绕封闭的五边形轨迹排列，晶片传送臂设置在闭合轨迹内。 晶片传送臂可在等离子体蚀刻容器和晶片排队台之间移动。 在等离子蚀刻容器和晶片传送臂之间提供可选择地致动的真空锁，以保持预期的大气条件并允许晶片从其中传输。 等离子体容器各自包括可相对于彼此移动的第一和第二水冷电极。 晶片传送臂可操作以仅通过背面和外围晶片接触来拾取晶片。 传送臂上的传感器提供了适当的晶片座位的指示。 每个容器中的晶片处理由状态控制器调节，用于从单个盒处理多个晶片，以提供用于在多个容器中进行多种或类似处理的晶片的有序且有效的吞吐量。

公开(公告)号：US5102495A

公开(公告)日：1992-04-07

申请号：US689357

申请日：1991-04-22

申请人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

发明人： Joseph A. Maher ,  E. John Vowles ,  Joseph D. Napoli ,  Arthur W. Zafiropoulo ,  Mark W. Miller

IPC分类号： H01J37/18 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/6719 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67742

摘要： Plural plasma etching vessels and a wafer queuing station are arrayed about a closed pentagonal locus with a wafer transfer arm therewithin all in a controlled vacuum environment. Wafers are movable within the controlled environment between the several plasma vessels and the wafer queuing station without atmospheric or other exposure so that possible contamination of the moved wafers is prevented. The system is selectively operative in either single-step or multiple-step processing modes, and in either of the modes, the several plasma etching vessels are operable to provide a desirably high system throughput. Wafer processing in each vessel is regulated by a state controller for processing a plurality of wafers from a single cassette, contained within the vacuum environment of the plural plasma etching vessels and wafer queuing station, to provide an orderly and efficient throughput of wafers for diverse or similar processing in the plural vessels. The wafer transfer arm is movable in R and .theta.. The plasma vessels each include first and second water-cooled electrodes that are movable relatively to each other so as to provide a selectable gap dimension therebetween. The wafer transfer arm is operative to pick-up the wafers by back-side contact only whereby front-side contact-induced contamination of the wafer surfaces is prevented. A sensor on the transfer arm is operative to provide a signal indication of proper wafer seating.

摘要翻译： 多个等离子体蚀刻容器和晶片排队台围绕封闭的五边形轨迹排列，其中晶片传送臂全部在受控的真空环境中。 晶片在几个等离子体容器和晶片排队台之间的受控环境内是可移动的，没有大气或其它暴露，从而可以防止移动的晶片的可能的污染。 该系统选择性地以单步或多步处理模式操作，并且在任一模式中，几个等离子体蚀刻容器可操作以提供期望的高系统吞吐量。 每个容器中的晶片处理由用于从多个等离子体蚀刻容器和晶片排队台的真空环境中包含的单个盒子处理多个晶片的状态控制器来调节，以提供用于不同或不同的等离子体 类似的处理在多个船只。 晶片传送臂可在R和θ中移动。 等离子体容器各自包括可相对于彼此移动的第一和第二水冷电极，以便在它们之间提供可选择的间隙尺寸。 晶片传送臂可操作以通过背侧接触来拾取晶片，从而防止了晶片表面的前侧接触引起的污染。 传送臂上的传感器可操作以提供适当的晶片座位的信号指示。