Hollow-anode glow discharge apparatus
    1.
    发明授权
    Hollow-anode glow discharge apparatus 失效
    空心阳极辉光放电装置

    公开(公告)号:US5248371A

    公开(公告)日:1993-09-28

    申请号:US929099

    申请日:1992-08-13

    摘要: Hollow-anode glow discharge apparatus in the form of two-electrode and three-electrode reactors provide, in various embodiments, improved uniformity, efficiency and low-pressure substrate surface processing. In one improved uniformity embodiment for ion-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, multi-sized and evenly-spaced holes. In one improved uniformity embodiment for chemically-dominated processes, the apparatus of the invention includes a high-energy-density uniformizing grid having multiple, evenly-spaced holes and a stepped or continuously-variable non-planar profile. In one improved low pressure embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density grid having multiple, evenly-sized and spaced holes of widths large enough to overcome dark space effects. In one improved efficiency selected ion energy embodiment for ion-dominated and/or chemically-dominated processes, the apparatus of the invention includes a high-energy-density source that synergistically cooperates with an apertured grid to provide selected-energy ions at higher densities than heretofore possible. In any embodiment, both build-up on and removal from the substrate are possible.

    摘要翻译: 双电极和三电极电抗器形式的空心 - 阳极辉光放电装置在各种实施例中提供改进的均匀性,效率和低压衬底表面处理。 在用于离子主导的工艺的一个改进的均匀性实施例中,本发明的装置包括具有多个多尺寸和均匀间隔的孔的高能量密度均匀化栅格。 在用于化学主导的方法的一个改进的均匀性实施方案中,本发明的装置包括具有多个均匀间隔的孔和高阶能量密度均匀化网格以及阶梯式或连续可变的非平面轮廓。 在用于离子主导和/或化学主导的方法的一个改进的低压实施例中,本发明的装置包括具有多个均匀尺寸和间隔开的宽度足够大以克服暗空间效应的孔的高能量密度栅格。 在用于离子主导和/或化学主导的方法的一种改进的效率选择的离子能量实施方案中,本发明的装置包括高能密度源,其与有孔网格协同地配合以提供更高密度的选择能量离子 以前可能的。 在任何实施例中,可以在基板上积聚和从基板移除两者。

    Electrical coupling between chamber parts in electronic device processing equipment
    2.
    发明授权
    Electrical coupling between chamber parts in electronic device processing equipment 失效
    电子设备加工设备中腔室部件之间的电气耦合

    公开(公告)号:US06779481B2

    公开(公告)日:2004-08-24

    申请号:US09789575

    申请日:2001-02-22

    IPC分类号: C23C16509

    摘要: An electrical coupling is provided between chamber parts of electronic device processing equipment (e.g., equipment used for processing semiconductor wafers) to reduce differences in the electrical potential between such parts. The coupling prevents or at least reduces the presence of plasma or excited gases in undesired regions of the process chamber. In illustrated embodiments, the coupling extends from a cover of a vertically movable electrode assembly to the liner of the chamber wall. Although these parts are each respectively coupled to ground, it is believed that differences in the ground path impedances result in these parts having different electrical potentials, and the potential differences can cause plasma or excited gases to be present in undesirable regions of the chamber. These electrical potential differences are suppressed by electrically coupling the parts to thereby prevent or reduce the presence of plasma or excited gases in undesired regions of the chamber. Although in the illustrated embodiments the cover of the electrode assembly is coupled to the chamber liner, the coupling could be utilized to suppress potential differences between other chamber parts.

    摘要翻译: 在电子设备处理设备的室部件(例如,用于处理半导体晶片的设备)之间提供电耦合,以减少这些部件之间的电位差。 联接器防止或至少减少处理室的不期望区域中的等离子体或激发气体的存在。 在所示实施例中,联接器从可垂直移动的电极组件的盖子延伸到腔室壁的衬套。 虽然这些部件各自分别耦合到地,但是据信接地路阻抗的差异导致这些部件具有不同的电位,并且电位差可能导致等离子体或激发气体存在于腔室的不期望的区域中。 通过电连接部件来抑制这些电位差,从而防止或减少腔室不期望区域中的等离子体或激发气体的存在。 尽管在所示实施例中,电极组件的盖子耦合到腔室衬套,但是可以利用联接器来抑制其它腔室部件之间的电位差。